公开(公告)号：US10281956B2

公开(公告)日：2019-05-07

申请号：US14693367

申请日：2015-04-22

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  So-Youn Jung ,  Jae-Wan Jung ,  Ki-Yong Lee ,  Sang-Wol Lee

IPC: G06F1/16 ,  G02F1/1333 ,  H04M1/02

Abstract: A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US09035311B2

公开(公告)日：2015-05-19

申请号：US13841121

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/3265 ,  H01L2227/323

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US09406730B2

公开(公告)日：2016-08-02

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08987723B2

公开(公告)日：2015-03-24

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，所述第一绝缘层包括在所述第一半导体层和所述第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US08987120B2

公开(公告)日：2015-03-24

申请号：US13864040

申请日：2013-04-16

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L21/20 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract translation: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US20140299860A1

公开(公告)日：2014-10-09

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

Abstract translation: 制造薄膜晶体管（TFT）的方法包括在基板上形成缓冲层，非晶硅层和绝缘层; 使非晶硅层结晶为多晶硅层; 通过同时构图多晶硅层和绝缘层来形成具有预定形状的半导体层和栅极绝缘层; 通过在栅极绝缘层上形成和图案化金属层，形成包括第一部分和第二部分的栅电极。 第一部分形成在栅极绝缘层上并且与半导体层的沟道区重叠，并且第二部分接触半导体层。 通过掺杂半导体层的区域，在半导体层上形成源极区和漏极区。 该区域排除与栅电极重叠的沟道区域，并构成不与栅电极重叠的区域。 在栅电极上形成层间绝缘层，以覆盖栅极绝缘层; 在层间绝缘层和栅极绝缘层上形成接触孔，露出源极区域和漏极区域，同时形成露出第二部分的开口部。 源电极和漏电极通过在层间绝缘层上图案化导电层而形成。 源电极和漏电极经由接触孔电连接到源极区域和漏极区域，同时去除经由开口露出的第二部分。

公开(公告)号：US20140284558A1

公开(公告)日：2014-09-25

申请号：US13933057

申请日：2013-07-01

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  Bo-Kyung Choi ,  Jae-Wan Jung ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.

Abstract translation: 薄膜晶体管（TFT）在衬底上包括半导体; 与所述半导体的至少一部分重叠的欧姆接触; 欧姆接触上的源电极和漏电极; 覆盖半导体的栅极绝缘层; 以及在所述栅极绝缘层上与所述半导体和所述源极电极和所述漏极电极重叠的栅电极，其中，所述栅电极与所述漏电极横向分开第一距离，并且与所述源极电极横向分离第二距离。

公开(公告)号：US08659026B2

公开(公告)日：2014-02-25

申请号：US13727201

申请日：2012-12-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L27/14

CPC classification number: G09G3/3275 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696

Abstract: A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.

Abstract translation: 高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分 几何结构比彼此。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。 一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

公开(公告)号：US09411376B2

公开(公告)日：2016-08-09

申请号：US14305613

申请日：2014-06-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tae-Hyeog Jung ,  Tae-Hoon Yang ,  Ki-Yong Lee ,  Sang-Wol Lee

IPC: G02F1/1335 ,  G06F1/16 ,  G09G5/00 ,  G02F1/1333

CPC classification number: G06F1/1652 ,  G02F1/133305 ,  G02F2001/133314 ,  G06F1/1601 ,  G06F1/1613 ,  G06F1/1643 ,  G09G5/00

Abstract: A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.

Abstract translation: 显示模块可以包括柔性面板，该柔性面板沿着使得压缩应力施加在壳体内的显示单元上的方向弯曲。