公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US09035311B2

公开(公告)日：2015-05-19

申请号：US13841121

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/3265 ,  H01L2227/323

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US09406730B2

公开(公告)日：2016-08-02

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08987723B2

公开(公告)日：2015-03-24

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，所述第一绝缘层包括在所述第一半导体层和所述第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20140299860A1

公开(公告)日：2014-10-09

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3244 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/78696 ,  H01L2029/42388

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

Abstract translation: 制造薄膜晶体管（TFT）的方法包括在基板上形成缓冲层，非晶硅层和绝缘层; 使非晶硅层结晶为多晶硅层; 通过同时构图多晶硅层和绝缘层来形成具有预定形状的半导体层和栅极绝缘层; 通过在栅极绝缘层上形成和图案化金属层，形成包括第一部分和第二部分的栅电极。 第一部分形成在栅极绝缘层上并且与半导体层的沟道区重叠，并且第二部分接触半导体层。 通过掺杂半导体层的区域，在半导体层上形成源极区和漏极区。 该区域排除与栅电极重叠的沟道区域，并构成不与栅电极重叠的区域。 在栅电极上形成层间绝缘层，以覆盖栅极绝缘层; 在层间绝缘层和栅极绝缘层上形成接触孔，露出源极区域和漏极区域，同时形成露出第二部分的开口部。 源电极和漏电极通过在层间绝缘层上图案化导电层而形成。 源电极和漏电极经由接触孔电连接到源极区域和漏极区域，同时去除经由开口露出的第二部分。

公开(公告)号：US10147774B2

公开(公告)日：2018-12-04

申请号：US14307980

申请日：2014-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L27/12 ,  H01L29/49 ,  H01L29/66

Abstract: A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

公开(公告)号：US09947771B2

公开(公告)日：2018-04-17

申请号：US14729381

申请日：2015-06-03

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park

IPC: H01L29/66 ,  H01L29/49 ,  H01L27/12 ,  H01L21/02 ,  H01L21/311 ,  H01L29/423 ,  H01L29/51 ,  H01L27/32

CPC classification number: H01L29/66757 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/42364 ,  H01L29/4908 ,  H01L29/518

Abstract: A method of fabricating a thin film transistor includes forming a substrate having first and second regions, a semiconductor layer pattern formed in the first region and the second region, and a first gate insulating layer pattern formed on a channel region of the semiconductor layer pattern of the first region. A second gate insulating layer is formed on the substrate, a first conductive layer pattern is formed above the channel region of the first region and above the semiconductor layer pattern of the second region, and an inter-layer insulating layer is formed on the substrate. A second conductive layer pattern is formed in the first region and above the first conductive layer pattern of the second region. The second conductive layer pattern of the first region is coupled to the semiconductor layer pattern of the first region through the second gate insulating layer and the inter-layer insulating layer.

公开(公告)号：US20140363936A1

公开(公告)日：2014-12-11

申请号：US14303233

申请日：2014-06-12

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Young-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-RaK Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract translation: 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US20140308445A1

公开(公告)日：2014-10-16

申请号：US14318086

申请日：2014-06-27

Applicant: Samsung Display Co., Ltd.

Inventor： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kii-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52 ,  Y10T137/6416

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract translation: 当原料通过原子层沉积沉积在基板上时，沉积设备和用于沉积设备的罐能够保持供应到沉积室的反应气体中包含的预定量的源材料，包括主体，源 存储器，其被配置为存储源材料，设置在主体外部的加热器;以及第一馈送控制器，被配置为控制从源存储器供应到主体的源材料。