公开(公告)号：US10281956B2

公开(公告)日：2019-05-07

申请号：US14693367

申请日：2015-04-22

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  So-Youn Jung ,  Jae-Wan Jung ,  Ki-Yong Lee ,  Sang-Wol Lee

IPC: G06F1/16 ,  G02F1/1333 ,  H04M1/02

Abstract: A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.

公开(公告)号：US09406730B2

公开(公告)日：2016-08-02

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08987723B2

公开(公告)日：2015-03-24

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，所述第一绝缘层包括在所述第一半导体层和所述第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20150001523A1

公开(公告)日：2015-01-01

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon PARK ,  Jong-Ryuk PARK ,  Yun-Mo CHUNG ,  Tak-Young LEE ,  Jin-Wook SEO ,  Ki-Yong LEE ,  Min-Jae JEONG ,  Yong-Duck SON ,  Byung-Soo SO ,  Seung-Kyu PARK ,  Dong-Hyun LEE ,  Kil-Won LEE ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US20140284558A1

公开(公告)日：2014-09-25

申请号：US13933057

申请日：2013-07-01

Applicant: Samsung Display Co., Ltd.

Inventor： Tae-Hoon Yang ,  Bo-Kyung Choi ,  Jae-Wan Jung ,  Ki-Yong Lee

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L29/41733 ,  H01L29/66757

Abstract: A thin film transistor (TFT) includes a semiconductor on a substrate; an ohmic contact overlapping at least a portion of the semiconductor; a source electrode and a drain electrode on the ohmic contact; a gate insulating layer covering the semiconductor; and a gate electrode overlapping the semiconductor and between the source electrode and the drain electrode on the gate insulating layer, wherein the gate electrode is laterally separated from the drain electrode by a first distance and is laterally separated from the source electrode by a second distance.

Abstract translation: 薄膜晶体管（TFT）在衬底上包括半导体; 与所述半导体的至少一部分重叠的欧姆接触; 欧姆接触上的源电极和漏电极; 覆盖半导体的栅极绝缘层; 以及在所述栅极绝缘层上与所述半导体和所述源极电极和所述漏极电极重叠的栅电极，其中，所述栅电极与所述漏电极横向分开第一距离，并且与所述源极电极横向分离第二距离。

公开(公告)号：US20140363936A1

公开(公告)日：2014-12-11

申请号：US14303233

申请日：2014-06-12

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Young-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-RaK Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract translation: 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。

公开(公告)号：US20140308445A1

公开(公告)日：2014-10-16

申请号：US14318086

申请日：2014-06-27

Applicant: Samsung Display Co., Ltd.

Inventor： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kii-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52 ,  Y10T137/6416

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract translation: 当原料通过原子层沉积沉积在基板上时，沉积设备和用于沉积设备的罐能够保持供应到沉积室的反应气体中包含的预定量的源材料，包括主体，源 存储器，其被配置为存储源材料，设置在主体外部的加热器;以及第一馈送控制器，被配置为控制从源存储器供应到主体的源材料。

公开(公告)号：US20140045305A1

公开(公告)日：2014-02-13

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。