公开(公告)号：US09035311B2

公开(公告)日：2015-05-19

申请号：US13841121

申请日：2013-03-15

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC: H01L29/12 ,  H01L29/786 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/52 ,  H01L27/3265 ,  H01L2227/323

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract translation: 提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极， 设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极 并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。 所得的电容器具有增加的表面积，因此增加电容。

公开(公告)号：US20140363936A1

公开(公告)日：2014-12-11

申请号：US14303233

申请日：2014-06-12

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Maxim Lisachenko ,  Bo-Kyung Choi ,  Dae-Woo Lee ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Ji-Su Ahn ,  Young-Dae Kim ,  Heung-Yeol Na ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-RaK Chang ,  Jae-Wan Jung ,  Sang-Yon Yoon

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/6675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

Abstract: A thin film transistor (TFT) and an organic light emitting diode (OLED) display device. The TFT and the OLED display device include a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate electrode insulated from the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, and source and drain electrodes insulated from the gate electrode and partially connected to the semiconductor layer, wherein the semiconductor layer is formed from a polycrystalline silicon layer crystallized by a metal catalyst and the metal catalyst is removed by gettering using an etchant. In addition, the OLED display device includes an insulating layer disposed on the entire surface of the substrate, a first electrode disposed on the insulating layer and electrically connected to one of the source and drain electrodes, an organic layer, and a second electrode.

Abstract translation: 薄膜晶体管（TFT）和有机发光二极管（OLED）显示装置。 TFT和OLED显示装置包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，与半导体层绝缘的栅电极，将半导体层与栅电极绝缘的栅极绝缘层， 以及与栅电极绝缘并且部分地连接到半导体层的源电极和漏电极，其中半导体层由通过金属催化剂结晶的多晶硅层形成，并且使用蚀刻剂通过吸气除去金属催化剂。 此外，OLED显示装置包括设置在基板的整个表面上的绝缘层，设置在绝缘层上并电连接到源极和漏极之一的第一电极，有机层和第二电极。