公开(公告)号：US09406730B2

公开(公告)日：2016-08-02

申请号：US14490725

申请日：2014-09-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L27/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/10 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

公开(公告)号：US08987723B2

公开(公告)日：2015-03-24

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32 ,  H01L27/12

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，所述第一绝缘层包括在所述第一半导体层和所述第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US09576797B2

公开(公告)日：2017-02-21

申请号：US14721621

申请日：2015-05-26

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Byung-Soo So

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/477 ,  H01L27/32

CPC classification number: H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

Abstract: A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Abstract translation: 制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅 层，并且使基板退火以将非晶硅层结晶成多晶硅层。 薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极， 源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

公开(公告)号：US20140353669A1

公开(公告)日：2014-12-04

申请号：US14061359

申请日：2013-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Il-Hun Seo ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259

Abstract: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

Abstract translation: 显示装置包括与衬底重叠并包括沟道区的有源层。 显示装置还包括设置在基板和有源层上的绝缘层。 显示装置还包括设置在绝缘层上的栅电极，与沟道区重叠，并且包括第一栅电极层和第二栅极电极层，其中第一栅极电极层由第一材料形成， 绝缘层和第二电极层，并且其中第二栅电极层由与第一材料不同的第二材料形成。 显示装置还包括设置在绝缘层上并包括由第一材料形成的第一接触层的接触部分。 显示装置还包括与第一接触层接触的像素电极。

公开(公告)号：US20140329343A1

公开(公告)日：2014-11-06

申请号：US14022126

申请日：2013-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Maidanchuk Ivan ,  Byung-Soo So ,  Dong-Hyun Lee ,  Won-Pil Lee

IPC: H01L21/66 ,  G01J3/44 ,  H01L21/268

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02667 ,  H01L22/12

Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。

公开(公告)号：US09257288B2

公开(公告)日：2016-02-09

申请号：US14022126

申请日：2013-09-09

Applicant: Samsung Display Co., LTD.

Inventor： Maidanchuk Ivan ,  Byung-Soo So ,  Dong-Hyun Lee ,  Won-Pil Lee

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02667 ,  H01L22/12

Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。

公开(公告)号：US09202856B2

公开(公告)日：2015-12-01

申请号：US14065085

申请日：2013-10-28

Applicant: Samsung Display Co., Ltd.

Inventor： Shin-Moon Kang ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12

CPC classification number: H01L27/3279 ,  H01L27/124 ,  H01L27/3248

Abstract: An organic light emitting diode display device is disclosed. The device includes, for example, a thin film transistor with an active layer on a substrate, a gate electrode, a source electrode, and a drain electrode, a pixel electrode formed on the same layer as the gate electrode, an electrode pattern partially exposing the pixel electrode and formed on the pixel electrode, a pixel electrode contact formed between the electrode pattern and the drain electrode and electrically connected to the drain electrode, a pixel defining film exposing the pixel electrode and formed to cover the drain electrode and the source electrode, an intermediate layer formed on the exposed pixel electrode and including an emissive layer, and an opposite electrode formed opposite the pixel electrode to at least partially cover the intermediate layer. A method of manufacturing the device is also disclosed.

Abstract translation: 公开了一种有机发光二极管显示装置。 该器件例如包括在衬底上具有有源层的薄膜晶体管，栅电极，源电极和漏电极，形成在与栅电极相同的层上的像素电极，电极图案部分曝光 所述像素电极形成在所述像素电极上，形成在所述电极图案和所述漏电极之间并与所述漏电极电连接的像素电极接触件，所述像素限定膜暴露所述像素电极并形成为覆盖所述漏电极和所述源电极 形成在曝光的像素电极上并包括发光层的中间层，以及与像素电极相对形成的至少部分覆盖中间层的相对电极。 还公开了一种制造该器件的方法。

公开(公告)号：US09171865B2

公开(公告)日：2015-10-27

申请号：US14061359

申请日：2013-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Il-Hun Seo ,  Jong-Hyun Choi ,  Byung-Soo So ,  Yong-Duck Son ,  Jin-Wook Seo

IPC: H01L27/14 ,  H01L31/036 ,  H01L21/00 ,  H01L27/12

CPC classification number: H01L27/124 ,  H01L27/1259

Abstract: A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer.

Abstract translation: 显示装置包括与衬底重叠并包括沟道区的有源层。 显示装置还包括设置在基板和有源层上的绝缘层。 显示装置还包括设置在绝缘层上的栅电极，与沟道区重叠，并且包括第一栅电极层和第二栅极电极层，其中第一栅极电极层由第一材料形成， 绝缘层和第二电极层，并且其中第二栅电极层由与第一材料不同的第二材料形成。 显示装置还包括设置在绝缘层上并包括由第一材料形成的第一接触层的接触部分。 显示装置还包括与第一接触层接触的像素电极。

公开(公告)号：US20140308445A1

公开(公告)日：2014-10-16

申请号：US14318086

申请日：2014-06-27

Applicant: Samsung Display Co., Ltd.

Inventor： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kii-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

IPC: C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45525 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52 ,  Y10T137/6416

Abstract: A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

Abstract translation: 当原料通过原子层沉积沉积在基板上时，沉积设备和用于沉积设备的罐能够保持供应到沉积室的反应气体中包含的预定量的源材料，包括主体，源 存储器，其被配置为存储源材料，设置在主体外部的加热器;以及第一馈送控制器，被配置为控制从源存储器供应到主体的源材料。

公开(公告)号：US20140045305A1

公开(公告)日：2014-02-13

申请号：US14056479

申请日：2013-10-17

Applicant: Samsung Display Co., Ltd.

Inventor： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung ,  Min-Jae Jeong

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

Abstract: A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Abstract translation: 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。