公开(公告)号：US10359663B2

公开(公告)日：2019-07-23

申请号：US15403968

申请日：2017-01-11

Applicant: Samsung Display Co., Ltd.

Inventor： Minsu Lee ,  Maidanchuk Ivan ,  Seungrok Lee ,  Wonbaek Lee

IPC: G02B5/20 ,  G02B5/30 ,  H01L27/32 ,  G02F1/1335

Abstract: A color filter includes a first filter. The first filter includes a first color forming material, a first quantum dot, and a first metal nanoparticle, the first filter exhibiting a first color.

公开(公告)号：US10062865B2

公开(公告)日：2018-08-28

申请号：US15365591

申请日：2016-11-30

Applicant: Samsung Display Co., Ltd.

Inventor： Minsu Lee ,  Maidanchuk Ivan ,  Seungrok Lee ,  Wonbaek Lee

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L27/3262 ,  H01L51/5203 ,  H01L51/5237 ,  H01L51/5271 ,  H01L51/5275

Abstract: An organic light-emitting display apparatus includes: a substrate; a pixel electrode above the substrate; an intermediate layer above the pixel electrode and including an organic emission layer; an opposite electrode above the intermediate layer; and an encapsulation structure above the opposite electrode and including at least one inorganic film and at least one organic film. A difference between a refractive index of the at least one inorganic film and a refractive index of the at least one organic film is in a range between about 0.3 to about 0.5. A thickness of the at least one inorganic film is in a range of about 0.7 μm to about 1.5 μm. A thickness of the at least one organic film is in a range of about 3.5 μm to about 6.5 μm.

公开(公告)号：US09257288B2

公开(公告)日：2016-02-09

申请号：US14022126

申请日：2013-09-09

Applicant: Samsung Display Co., LTD.

Inventor： Maidanchuk Ivan ,  Byung-Soo So ,  Dong-Hyun Lee ,  Won-Pil Lee

IPC: H01L21/66 ,  H01L21/268 ,  H01L21/00 ,  H01L21/02

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02667 ,  H01L22/12

Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。

公开(公告)号：US10811639B2

公开(公告)日：2020-10-20

申请号：US15719739

申请日：2017-09-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Maidanchuk Ivan ,  Minsu Lee

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/56

Abstract: A display device includes a substrate, a pixel electrode, an encapsulation layer, and a light-shielding layer. The pixel electrode is positioned above the substrate. The encapsulation layer is disposed over the pixel electrode. The encapsulation layer includes a first inorganic layer. The first inorganic layer includes a plurality of fine pillar patterns. The pillar patterns are sloped with respect to one surface of the substrate. The light-shielding layer is disposed on the encapsulation layer. The light-shielding layer includes a first opening. The first opening overlaps at least a portion of the pixel electrode.

公开(公告)号：US20140329343A1

公开(公告)日：2014-11-06

申请号：US14022126

申请日：2013-09-09

Applicant: Samsung Display Co., Ltd.

Inventor： Maidanchuk Ivan ,  Byung-Soo So ,  Dong-Hyun Lee ,  Won-Pil Lee

IPC: H01L21/66 ,  G01J3/44 ,  H01L21/268

CPC classification number: H01L21/268 ,  H01L21/02532 ,  H01L21/02667 ,  H01L22/12

Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract translation: 公开了一种用于监测非晶硅（a-Si）薄膜的结晶的方法和系统，以及通过使用该方法和系统制造薄膜晶体管（TFT）的方法。 监测a-Si薄膜结晶的方法包括：将来自光源的光照射到监测a-Si薄膜上，使监测a-Si薄膜退火; 对监测的a-Si薄膜进行退火，同时测量由监测a-Si薄膜以设定的时间间隔散射的光的拉曼散射光谱; 并基于拉曼散射光谱计算监测a-Si薄膜的结晶特征值。