公开(公告)号：US20130230976A1

公开(公告)日：2013-09-05

申请号：US13864040

申请日：2013-04-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Ji-Yong PARK ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L21/02

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract translation: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US08987120B2

公开(公告)日：2015-03-24

申请号：US13864040

申请日：2013-04-16

Applicant: Samsung Display Co., Ltd.

Inventor： Ji-Yong Park ,  Jae-Bon Koo ,  Hye-Hyang Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L21/20 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/78675

Abstract: The present invention relates to a flat panel display device comprising a polysilicon thin film transistor and a method of manufacturing the same. Grain sizes of polysilicon grains formed in active channel regions of thin film transistors of a driving circuit portion and a pixel portion of the flat panel display device are different from each other. Further, the flat panel display device comprising P-type and N-type thin film transistors having different particle shapes from each other.

Abstract translation: 本发明涉及一种包括多晶硅薄膜晶体管的平板显示装置及其制造方法。 在驱动电路部分的薄膜晶体管和平板显示装置的像素部分的有源沟道区域中形成的多晶硅晶粒的晶粒尺寸彼此不同。 此外，平板显示装置包括彼此具有不同粒子形状的P型和N型薄膜晶体管。

公开(公告)号：US08659026B2

公开(公告)日：2014-02-25

申请号：US13727201

申请日：2012-12-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC: H01L27/14

CPC classification number: G09G3/3275 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696

Abstract: A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.

Abstract translation: 高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分 几何结构比彼此。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。 一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。