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公开(公告)号：US08588010B2
公开(公告)日：2013-11-19
申请号：US12929349
申请日：2011-01-18
Applicant: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
Inventor： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
IPC: G11C7/22
CPC classification number: G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
Abstract: At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
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公开(公告)号：US20110110172A1
公开(公告)日：2011-05-12
申请号：US12929349
申请日：2011-01-18
Applicant: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
Inventor： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
CPC classification number: G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
Abstract: At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
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3.发明申请Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith 有权具有基于电阻的存储器阵列，读取和写入方法以及与其相关联的系统的半导体器件公开(公告)号：US20090141549A1
公开(公告)日：2009-06-04
申请号：US12292890
申请日：2008-11-28
Applicant: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
Inventor： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
CPC classification number: G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
Abstract: At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
Abstract translation: 至少一个实施例包括非易失性存储单元阵列，被配置为存储被写入非易失性存储单元阵列的数据的写入缓冲器以及被配置为将数据写入到非易失性存储单元阵列中的写入单元。 写单元被配置为执行数据的写入，使得在被写入缓冲器之前，每个数据将在非易失性存储器中已经达到稳定的存储状态。
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4.发明授权Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith 有权具有基于电阻的存储器阵列，读取和写入方法以及与其相关联的系统的半导体器件公开(公告)号：US07894277B2
公开(公告)日：2011-02-22
申请号：US12292890
申请日：2008-11-28
Applicant: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
Inventor： Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
IPC: G11C7/00
CPC classification number: G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
Abstract: At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
Abstract translation: 至少一个实施例包括非易失性存储单元阵列，被配置为存储被写入非易失性存储单元阵列的数据的写入缓冲器以及被配置为将数据写入到非易失性存储单元阵列中的写入单元。 写单元被配置为执行数据的写入，使得在被写入缓冲器之前，每个数据将在非易失性存储器中已经达到稳定的存储状态。
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5.发明授权Semiconductor device having resistance based memory array, method of operation, and systems associated therewith 有权具有基于电阻的存储器阵列，操作方法和与其相关联的系统的半导体器件公开(公告)号：US08218379B2
公开(公告)日：2012-07-10
申请号：US12318241
申请日：2008-12-23
Applicant: Yong-Jun Lee , Kwang-Jin Lee , Taek-Sung Kim , Kwang-Ho Kim , Woo-Yeong Cho , Hyun-Ho Choi , Hye Jin Kim
Inventor： Yong-Jun Lee , Kwang-Jin Lee , Taek-Sung Kim , Kwang-Ho Kim , Woo-Yeong Cho , Hyun-Ho Choi , Hye Jin Kim
IPC: G11C16/04
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0064 , G11C13/0097 , G11C2013/0078 , G11C2213/72
Abstract: In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
Abstract translation: 在一个实施例中，半导体器件包括非易失性存储单元阵列，被配置为写入非易失性存储单元阵列的写入电路和控制电路。 控制电路被配置为存储至少一个擦除指示符。 擦除指示符与非易失性存储单元阵列的至少一部分相关联并且指示逻辑状态。 控制电路被配置为在非易失性存储单元阵列的相关部分的擦除操作期间，控制写入电路将由擦除指示符指示的逻辑状态写入非易失性存储单元阵列。
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Patent Agency Ranking
6.发明申请Semiconductor device having resistance based memory array, method of operation, and systems associated therewith 有权具有基于电阻的存储器阵列，操作方法和与其相关联的系统的半导体器件公开(公告)号：US20090168494A1
公开(公告)日：2009-07-02
申请号：US12318241
申请日：2008-12-23
Applicant: Yong-Jun Lee , Kwang-Jin Lee , Taek-Sung Kim , Kwang-Ho Kim , Woo-Yeong Cho , Hyun-Ho Choi , Hye Jin Kim
Inventor： Yong-Jun Lee , Kwang-Jin Lee , Taek-Sung Kim , Kwang-Ho Kim , Woo-Yeong Cho , Hyun-Ho Choi , Hye Jin Kim
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0023 , G11C13/0026 , G11C13/0064 , G11C13/0097 , G11C2013/0078 , G11C2213/72
Abstract: In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
Abstract translation: 在一个实施例中，半导体器件包括非易失性存储单元阵列，被配置为写入非易失性存储单元阵列的写入电路和控制电路。 控制电路被配置为存储至少一个擦除指示符。 擦除指示符与非易失性存储单元阵列的至少一部分相关联并且指示逻辑状态。 控制电路被配置为在非易失性存储单元阵列的相关部分的擦除操作期间，控制写入电路将由擦除指示符指示的逻辑状态写入非易失性存储单元阵列。
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公开(公告)号：US09169425B2
公开(公告)日：2015-10-27
申请号：US13713679
申请日：2012-12-13
Applicant: Hye Jin Kim , Jae Won Choi , Ji Ho Kim , Jin Man Kim , Gyu Seok Song
Inventor： Hye Jin Kim , Jae Won Choi , Ji Ho Kim , Jin Man Kim , Gyu Seok Song
CPC classification number: C09J163/00 , C08G59/504 , C08G59/56 , C08G59/621 , H01L24/29 , H01L24/32 , H01L24/50 , H01L2224/2929 , H01L2224/29291 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29355 , H01L2224/29386 , H01L2224/2939 , H01L2224/29391 , H01L2224/29393 , H01L2224/32225 , H01L2224/83101 , H01L2924/12043 , H01L2924/181 , H01L2924/00
Abstract: An adhesive film includes an amine curing agent and a phenolic curing agent, and has a ratio of a storage modulus at 170° C. after 80% or more curing to a storage modulus at 40° C. before curing in the range of about 1.5 to about 3.0.
Abstract translation: 粘合剂膜包括胺固化剂和酚类固化剂，并且在固化后在170℃下在80℃以上固化后的储能模量与在40℃下的储能模量之比在约1.5的范围内 至约3.0。
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8.发明授权公开(公告)号：US08797407B2
公开(公告)日：2014-08-05
申请号：US12878414
申请日：2010-09-09
Applicant: Sung Q Lee , Hye Jin Kim , Hong Yeol Lee , Kang Ho Park , Jong Dae Kim
Inventor： Sung Q Lee , Hye Jin Kim , Hong Yeol Lee , Kang Ho Park , Jong Dae Kim
CPC classification number: G01S15/526 , G01S15/88 , G08B13/1609 , G08B13/19695
Abstract: A security system and a method of determining whether there is an intrusion are provided. A correlation between sound signals obtained from a sound source generating device and a sound-field variation measuring device is used to measure a acoustic field in a certain space. A difference between an initially set acoustic field and a changed acoustic field is used to determine whether there is an intruding object in a certain space. The security system includes a sound source generating device for generating a sound source; and a sound-field variation measuring device for measuring a acoustic field formed by the sound source, wherein an initially set acoustic field is compared with the measured acoustic field to determine whether there is an intrusion.
Abstract translation: 提供一种确定是否存在入侵的安全系统和方法。 使用从声源发生装置获取的声音信号和声场变化测量装置之间的相关性来测量某个空间中的声场。 使用初始设置的声场和改变的声场之间的区别来确定在某个空间中是否存在入侵物体。 安全系统包括用于产生声源的声源产生装置; 以及用于测量由声源形成的声场的声场变化测量装置，其中将初始设置的声场与所测量的声场进行比较以确定是否存在入侵。
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公开(公告)号：US08712079B2
公开(公告)日：2014-04-29
申请号：US12507364
申请日：2009-07-22
Applicant: Hye Jin Kim , Sung Q Lee , Min Cheol Shin , Kang Ho Park , Jong Dae Kim
Inventor： Hye Jin Kim , Sung Q Lee , Min Cheol Shin , Kang Ho Park , Jong Dae Kim
CPC classification number: H04R17/00 , H04R1/06 , H04R31/006 , H04R2499/11
Abstract: A piezoelectric speaker and a method of manufacturing the same that can obtain a high sound pressure using a piezoelectric thin film are provided. The piezoelectric speaker includes a piezoelectric thin film, electrodes formed on an upper surface or upper and lower surfaces of the piezoelectric thin film, a damping material layer formed on the lower surface of the piezoelectric thin film, and a frame attached around at least one of the piezoelectric thin film and the damping material layer using an adhesive.
Abstract translation: 提供一种使用压电薄膜可以获得高声压的压电扬声器及其制造方法。 压电扬声器包括压电薄膜，形成在压电薄膜的上表面或上表面和下表面上的电极，形成在压电薄膜的下表面上的阻尼材料层和围绕至少一个 压电薄膜和使用粘合剂的阻尼材料层。
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公开(公告)号：US08658399B2
公开(公告)日：2014-02-25
申请号：US13662739
申请日：2012-10-29
Applicant: Jong-Seong Kim , Woo-jae Lee , Nam-Seok Roh , Sang-Il Kim , Min-Ho Yoon , Young Tak Song , Tae Jin Kang , Suk Heung Oh , Seung-Jae Lee , Hye Jin Kim , Jin Ju Yu , Dong Hyun Yu , Young Sik Yoon , Jong Hwan Lee
Inventor： Jong-Seong Kim , Woo-jae Lee , Nam-Seok Roh , Sang-Il Kim , Min-Ho Yoon , Young Tak Song , Tae Jin Kang , Suk Heung Oh , Seung-Jae Lee , Hye Jin Kim , Jin Ju Yu , Dong Hyun Yu , Young Sik Yoon , Jong Hwan Lee
Abstract: Disclosed herein is a novel gluconacetobacter strain having cellulose producing activity. Specifically, the present invention relates to a novel gluconacetobacter strain producing nano-structured cellulose in a highly efficient manner. The cellulose produced by the strain, due to its superb thermodynamic properties, can be characterized as nano-structured bacterial cellulose and therefore utilized as a bio-nano-fiber. Particularly, the cellulose can be impregnated with a resin to form a cellulose-based resin which can be effectively adapted for a substrate for a liquid crystal display (LCD).
Abstract translation: 本文公开了具有纤维素生产活性的新颖的葡萄糖酸菌属菌株。 具体地说，本发明涉及以高效的方式生产纳米结构纤维素的新颖的葡糖酸菌属菌株。 该菌株由于其极好的热力学性质而产生的纤维素可以表征为纳米结构的细菌纤维素，因此用作生物纳米纤维。 特别地，纤维素可以用树脂浸渍以形成可以有效地适用于液晶显示器（LCD）的基板的纤维素类树脂。
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