Invention Grant
US07894277B2 Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith
有权
具有基于电阻的存储器阵列，读取和写入方法以及与其相关联的系统的半导体器件
- Patent Title: Semiconductor device having resistance based memory array, method of reading and writing, and systems associated therewith
- Patent Title (中): 具有基于电阻的存储器阵列，读取和写入方法以及与其相关联的系统的半导体器件
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Application No.: US12292890Application Date: 2008-11-28
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Publication No.: US07894277B2Publication Date: 2011-02-22
- Inventor: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
- Applicant: Kwang Jin Lee , Du Eung Kim , Hye Jin Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce
- Priority: KR10-2007-0124512 20071203
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
At least one embodiment includes a non-volatile memory cell array, a write buffer configured to store data being written into the non-volatile memory cell array, and a write unit configured to write data into the non-volatile memory cell array. The write unit is configured to perform writing of data such that each data will have reached a stable storage state in the non-volatile memory prior to being over-written in the write buffer.
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