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公开(公告)号：US10396528B2
公开(公告)日：2019-08-27
申请号：US16030417
申请日：2018-07-09
Inventor： In Gyoo Kim , Gyungock Kim , Sang Hoon Kim
Abstract: Provided is a laser device according to an embodiment of the inventive concept. The laser device includes: a semiconductor substrate; a germanium single crystal layer on the semiconductor substrate; and a pumping light source disposed on the germanium single crystal layer and configured to emit light toward the germanium single crystal layer, wherein the germanium single crystal layer receives the light to thereby output laser.
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公开(公告)号：US09618776B2
公开(公告)日：2017-04-11
申请号：US14848077
申请日：2015-09-08
Inventor： In Gyoo Kim , Gyungock Kim , Sang Hoon Kim
CPC classification number: G02F1/025 , G02F2001/0155 , G02F2001/0157
Abstract: Provided is an optical modulator including an optical waveguide and an optical modulation part integrated on the optical waveguide that is clad in oxide silicon and has silicon as core by using a bulk silicon wafer in place of an silicon-on-insulator (SOI) used for a typical optical waveguide and optical modulator and using complementary metal oxide semiconductor (CMOS) and thermal oxide film formation processes, and a fabrication method thereof.
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公开(公告)号：US09231372B2
公开(公告)日：2016-01-05
申请号：US14279839
申请日：2014-05-16
Inventor： In Gyoo Kim , Sang Hoon Kim , Jaegyu Park , Gyungock Kim , Ki Seok Jang
CPC classification number: H01S5/1021 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/136 , G02B2006/12061 , G02B2006/12147 , H01S5/021 , H01S5/026 , H01S5/2086 , H01S5/2272 , H01S5/3223 , H01S2301/176 , H01S2304/00
Abstract: Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
Abstract translation: 提供一种制造半导体激光器的方法。 该方法包括：提供包括第一区域和第二区域的半导体衬底; 通过使用选择性外延生长工艺在半导体衬底的第二区域中形成硅单晶层; 通过使用硅单晶层形成光耦合器; 以及通过选择性外延生长工艺在半导体衬底的第一区域中形成包括锗单晶层的激光芯结构。
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公开(公告)号：US08936951B2
公开(公告)日：2015-01-20
申请号：US13776428
申请日：2013-02-25
Inventor： In Gyoo Kim , Gyungock Kim , Sang Hoon Kim , Ki Seok Jang , JiHo Joo
CPC classification number: H01S5/3031 , G02B6/12004 , H01S5/021 , H01S5/026 , H01S5/0425 , H01S5/3223 , Y10S438/933
Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.
Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。
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公开(公告)号：US12125907B2
公开(公告)日：2024-10-22
申请号：US17564688
申请日：2021-12-29
Inventor： Seong Hyun Lee , Dongwoo Suh , Sang Hoon Kim , Jeong Woo Park , Tae Moon Roh
IPC: H01L29/78 , H01L27/12 , H01L29/423 , H01L29/45 , H01L29/66
CPC classification number: H01L29/7831 , H01L27/1203 , H01L29/42312 , H01L29/42316 , H01L29/4232 , H01L29/458 , H01L29/66484 , H01L29/66772
Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.
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Patent Agency Ranking
公开(公告)号：US10466413B2
公开(公告)日：2019-11-05
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung joon Kwack
IPC: G02B6/12 , H01L31/167 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US10168474B2
公开(公告)日：2019-01-01
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , myung joon Kwack
IPC: G02B6/12 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US09690042B2
公开(公告)日：2017-06-27
申请号：US14062454
申请日：2013-10-24
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung Joon Kwack
IPC: H01L27/15 , H01L31/153 , G02B6/12 , G02B6/13 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US09728657B2
公开(公告)日：2017-08-08
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho Joo , Gyungock Kim , Myungjoon Kwack , Sang Hoon Kim , Sun Ae Kim , In Gyoo Kim , Jaegyu Park , Jin Hyuk Oh , Ki Seok Jang
IPC: H01L31/0224 , H01L31/0352 , H01L31/107 , H01L31/18
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
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10.发明授权Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same 有权低电压高增益高速锗光电检测器及其制造方法公开(公告)号：US09171996B2
公开(公告)日：2015-10-27
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock Kim , Sang Hoon Kim , Ki Seok Jang , In Gyoo Kim , Jin Hyuk Oh , Sun Ae Kim
IPC: H01L33/06 , H01L33/00 , H01L31/0352 , H01L31/107 , B82Y20/00
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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