公开(公告)号：US11908931B2

公开(公告)日：2024-02-20

申请号：US17499736

申请日：2021-10-12

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Tae Moon Roh ,  Hyun-Tak Kim ,  Sun Ae Kim

IPC: H01L29/78 ,  H10N99/00

CPC classification number: H01L29/7817 ,  H10N99/03

Abstract: Provided is a monolithic metal-insulator transition device. The monolithic metal-insulator transition device includes a substrate including a driving region and a switching region, first and second source/drain regions on the driving region, a gate electrode between the first and second source/drain regions, an inlet well region formed adjacent to an upper surface of the substrate on the switching region, a control well region having a different conductivity type from the inlet well region between the inlet well region and a lower surface of the substrate, a first wiring electrically connecting the first source/drain region and the control well region, and a second wiring electrically connecting the second source/drain region and the inlet well region.

公开(公告)号：US09728657B2

公开(公告)日：2017-08-08

申请号：US14812981

申请日：2015-07-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jiho Joo ,  Gyungock Kim ,  Myungjoon Kwack ,  Sang Hoon Kim ,  Sun Ae Kim ,  In Gyoo Kim ,  Jaegyu Park ,  Jin Hyuk Oh ,  Ki Seok Jang

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/18

CPC classification number: H01L31/022416 ,  H01L31/03529 ,  H01L31/1075 ,  H01L31/1808 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.

公开(公告)号：US09171996B2

公开(公告)日：2015-10-27

申请号：US13949081

申请日：2013-07-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  In Gyoo Kim ,  Jin Hyuk Oh ,  Sun Ae Kim

IPC: H01L33/06 ,  H01L33/00 ,  H01L31/0352 ,  H01L31/107 ,  B82Y20/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L31/035227 ,  H01L31/035254 ,  H01L31/107 ,  H01L33/0054 ,  Y10S977/762 ,  Y10S977/774 ,  Y10S977/954

Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.

Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。

公开(公告)号：US10466413B2

公开(公告)日：2019-11-05

申请号：US15607717

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  Myung joon Kwack

IPC: G02B6/12 ,  H01L31/167 ,  G02B6/42 ,  G02B6/13 ,  H01L21/762 ,  H01L27/15

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US10168474B2

公开(公告)日：2019-01-01

申请号：US15607726

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  myung joon Kwack

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/13 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US09690042B2

公开(公告)日：2017-06-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  Myung Joon Kwack

IPC: H01L27/15 ,  H01L31/153 ,  G02B6/12 ,  G02B6/13 ,  G02B6/42 ,  H01L21/762

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.