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公开(公告)号：US10466413B2
公开(公告)日：2019-11-05
申请号：US15607717
申请日：2017-05-30
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung joon Kwack
IPC: G02B6/12 , H01L31/167 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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Patent Agency Ranking
公开(公告)号：US10168474B2
公开(公告)日：2019-01-01
申请号：US15607726
申请日：2017-05-30
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , myung joon Kwack
IPC: G02B6/12 , G02B6/42 , G02B6/13 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US09690042B2
公开(公告)日：2017-06-27
申请号：US14062454
申请日：2013-10-24
Inventor： Gyungock Kim , Hyundai Park , In Gyoo Kim , Sang Hoon Kim , Ki Seok Jang , Sang Gi Kim , Jiho Joo , Yongseok Choi , Hyuk Je Kwon , Jaegyu Park , Sun Ae Kim , Jin Hyuk Oh , Myung Joon Kwack
IPC: H01L27/15 , H01L31/153 , G02B6/12 , G02B6/13 , G02B6/42 , H01L21/762
CPC classification number: G02B6/12004 , G02B6/13 , G02B6/4206 , G02B6/4214 , H01L21/762 , H01L27/15 , H01L31/167
Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.
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公开(公告)号：US20250062276A1
公开(公告)日：2025-02-20
申请号：US18807628
申请日：2024-08-16
Inventor： Jung Ho Shin , Chan Mi Lee , Ji Ho Joo , Gwang Mun Choi , Yong Sung Eom , Kwang Seong Choi , Seok Hwan Moon , Jin Hyuk Oh , Ho Gyeong Yun , Ki Seok Jang
IPC: H01L23/00
Abstract: The present invention relates to a method for dipping an adhesive material, and the method for dipping an adhesive material includes dipping an adhesive material onto a first dipping stamp, transferring the adhesive material, which is dipped onto the first dipping stamp, to a target substrate, and transferring a device to the target substrate, to which the adhesive material is transferred.
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公开(公告)号：US09728657B2
公开(公告)日：2017-08-08
申请号：US14812981
申请日：2015-07-29
Inventor： Jiho Joo , Gyungock Kim , Myungjoon Kwack , Sang Hoon Kim , Sun Ae Kim , In Gyoo Kim , Jaegyu Park , Jin Hyuk Oh , Ki Seok Jang
IPC: H01L31/0224 , H01L31/0352 , H01L31/107 , H01L31/18
CPC classification number: H01L31/022416 , H01L31/03529 , H01L31/1075 , H01L31/1808 , Y02E10/50 , Y02P70/521
Abstract: Provided is a photodetector including a substrate, a first doped region on the substrate, a second doped region having a ring structure, wherein the second doped region is provided in the substrate, surrounds the first doped region and is horizontally spaced apart from a side of the first doped region, an optical absorption layer on the first doped region, a contact layer on the optical absorption layer, a first electrode on the contact layer, and a second electrode on the second doped region.
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6.发明授权Low-voltage high-gain high-speed germanium photo detector and method of fabricating the same 有权低电压高增益高速锗光电检测器及其制造方法公开(公告)号：US09171996B2
公开(公告)日：2015-10-27
申请号：US13949081
申请日：2013-07-23
Inventor： Gyungock Kim , Sang Hoon Kim , Ki Seok Jang , In Gyoo Kim , Jin Hyuk Oh , Sun Ae Kim
IPC: H01L33/06 , H01L33/00 , H01L31/0352 , H01L31/107 , B82Y20/00
CPC classification number: H01L33/06 , B82Y20/00 , H01L31/035227 , H01L31/035254 , H01L31/107 , H01L33/0054 , Y10S977/762 , Y10S977/774 , Y10S977/954
Abstract: Provided is a silicon-wafer-based germanium semiconductor photodetector configured to be able to provide properties of high gain, high sensitivity, and high speed, at a relatively low voltage. A germanium-based carrier multiplication layer (e.g., a single germanium layer or a germanium and silicon superlattice layer) may be provided on a silicon wafer, and a germanium charge layer may be provided thereon, a germanium absorption layer may be provided on the charge layer, and a polysilicon second contact layer may be provided on the absorption layer. The absorption layer may be configured to include germanium quantum dots or wires.
Abstract translation: 提供一种基于硅晶片的锗半导体光电检测器，其被配置为能够在相对低的电压下提供高增益，高灵敏度和高速度的特性。 可以在硅晶片上提供基于锗的载体倍增层（例如，单个锗层或锗和硅超晶格层），并且可以在其上提供锗电荷层，可以在电荷上提供锗吸收层 层，并且可以在吸收层上设置多晶硅第二接触层。 吸收层可以被配置为包括锗量子点或线。
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