公开(公告)号：US09316792B2

公开(公告)日：2016-04-19

申请号：US14159355

申请日：2014-01-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyundai Park ,  Taeyong Kim ,  JiHo Joo ,  Jaegyu Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42 ,  G02B6/30 ,  G02B6/122 ,  G02B6/14 ,  G02B6/12

CPC classification number: G02B6/305 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12092

Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.

Abstract translation: 提供一种光耦合器和包括该光耦合器的光学装置。 光耦合器包括：基板; 衬底上的缓冲层; 以及包括水平模式扩展器层和垂直模式扩展器层的光学耦合层，其中水平模式扩展器层在缓冲层上在一个方向上扩展，并且其中垂直模式扩展器层调整水平模式扩展器层 以及具有不同直径或截面积并连接到水平模式扩展器层的两侧的多个光传输装置，并且垂直模式扩展器层设置在水平模式扩展器层的一侧，以使多个 光传输设备。

公开(公告)号：US09118160B2

公开(公告)日：2015-08-25

申请号：US14195778

申请日：2014-03-03

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyundai Park ,  Gyungock Kim

IPC: H01S5/02 ,  H01S5/042 ,  H01S5/183

CPC classification number: H01S5/0218 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0422 ,  H01S5/18308

Abstract: Provided is a vertical-cavity surface-emitting laser (VCSEL). The VCSEL includes a silicon substrate, a lower reflective layer disposed on the silicon substrate, a light generation laser disposed on the lower reflective layer, and an upper reflective layer disposed on the light generation layer. The lower reflective layer, the light generation layer, and the upper reflective layer may include a III-V semiconductor light source-active layer monolithically integrated on a first impurity layer by wafer bonding.

Abstract translation: 提供了垂直腔表面发射激光器（VCSEL）。 VCSEL包括硅衬底，设置在硅衬底上的下反射层，设置在下反射层上的发光激光器和设置在光产生层上的上反射层。 下反射层，发光层和上反射层可以包括通过晶片接合单片地集成在第一杂质层上的III-V半导体光源有源层。

公开(公告)号：US10466413B2

公开(公告)日：2019-11-05

申请号：US15607717

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  Myung joon Kwack

IPC: G02B6/12 ,  H01L31/167 ,  G02B6/42 ,  G02B6/13 ,  H01L21/762 ,  H01L27/15

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US10168474B2

公开(公告)日：2019-01-01

申请号：US15607726

申请日：2017-05-30

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  myung joon Kwack

IPC: G02B6/12 ,  G02B6/42 ,  G02B6/13 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US09690042B2

公开(公告)日：2017-06-27

申请号：US14062454

申请日：2013-10-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Gyungock Kim ,  Hyundai Park ,  In Gyoo Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  Sang Gi Kim ,  Jiho Joo ,  Yongseok Choi ,  Hyuk Je Kwon ,  Jaegyu Park ,  Sun Ae Kim ,  Jin Hyuk Oh ,  Myung Joon Kwack

IPC: H01L27/15 ,  H01L31/153 ,  G02B6/12 ,  G02B6/13 ,  G02B6/42 ,  H01L21/762

CPC classification number: G02B6/12004 ,  G02B6/13 ,  G02B6/4206 ,  G02B6/4214 ,  H01L21/762 ,  H01L27/15 ,  H01L31/167

Abstract: Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

公开(公告)号：US09164238B2

公开(公告)日：2015-10-20

申请号：US14329878

申请日：2014-07-11

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jaegyu Park ,  Hyundai Park ,  Jiho Joo ,  Myung joon Kwack ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/26

CPC classification number: G02B6/262 ,  G02B6/12014 ,  G02B6/34

Abstract: Provided are an optical coupler and an arrayed-waveguide grating structure including the same. The coupler includes a lower clad layer, a core comprising a slab waveguide region disposed on one side of the lower clad layer and a ridge waveguide region disposed on the other side of the lower clad layer, and an upper clad disposed on the core, wherein the ridge waveguide region comprises a self-focusing region configured to focus an optical signal provided form the slab waveguide region and thus to prevent scattering of the optical signal.

Abstract translation: 提供一种光耦合器和包括该光耦合器的阵列波导光栅结构。 耦合器包括下包层，芯包括布置在下包层的一侧上的平板波导区和设置在下包层的另一侧的脊波导区，以及设置在芯上的上包层。 脊状波导区域包括被配置为聚焦从平板波导区域提供的光信号并因此防止光信号的散射的自聚焦区域。