公开(公告)号：US09316792B2

公开(公告)日：2016-04-19

申请号：US14159355

申请日：2014-01-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyundai Park ,  Taeyong Kim ,  JiHo Joo ,  Jaegyu Park ,  Gyungock Kim

IPC: G02B6/26 ,  G02B6/42 ,  G02B6/30 ,  G02B6/122 ,  G02B6/14 ,  G02B6/12

CPC classification number: G02B6/305 ,  G02B6/12002 ,  G02B6/1228 ,  G02B6/14 ,  G02B2006/12092

Abstract: Provided are an optical coupler and an optical device including the same. The optical coupler includes: a substrate; a buffer layer on the substrate; and an optical coupling layer including a horizontal mode expander layer and a vertical mode expander layer, wherein the horizontal mode expander layer expands in one direction on the buffer layer, and wherein the vertical mode expander layer adjusts a stepped difference between the horizontal mode expander layer and a plurality of optical transmission devices having different diameters or sectional areas and connected to both sides of the horizontal mode expander layer, and the vertical mode expander layer is disposed on a side of the horizontal mode expander layer to minimize optical loss between the plurality of optical transmission devices.

Abstract translation: 提供一种光耦合器和包括该光耦合器的光学装置。 光耦合器包括：基板; 衬底上的缓冲层; 以及包括水平模式扩展器层和垂直模式扩展器层的光学耦合层，其中水平模式扩展器层在缓冲层上在一个方向上扩展，并且其中垂直模式扩展器层调整水平模式扩展器层 以及具有不同直径或截面积并连接到水平模式扩展器层的两侧的多个光传输装置，并且垂直模式扩展器层设置在水平模式扩展器层的一侧，以使多个 光传输设备。

公开(公告)号：US08936951B2

公开(公告)日：2015-01-20

申请号：US13776428

申请日：2013-02-25

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Gyoo Kim ,  Gyungock Kim ,  Sang Hoon Kim ,  Ki Seok Jang ,  JiHo Joo

IPC: H01L21/00 ,  H01S5/30 ,  H01S5/026 ,  H01S5/32 ,  G02B6/12 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01S5/3031 ,  G02B6/12004 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/3223 ,  Y10S438/933

Abstract: Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

Abstract translation: 提供半导体激光器及其制造方法。 该方法包括：提供包括掩埋氧化物层的衬底; 形成图案，其包括通过蚀刻所述掩埋氧化物层而露出所述衬底的开口部分; 在开口部分形成锗单晶层; 并在基片上形成与锗单晶层相邻的光耦合器。