Invention Grant
- Patent Title: Semiconductor laser and method of fabricating the same
- Patent Title (中): 半导体激光器及其制造方法
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Application No.: US14279839Application Date: 2014-05-16
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Publication No.: US09231372B2Publication Date: 2016-01-05
- Inventor: In Gyoo Kim , Sang Hoon Kim , Jaegyu Park , Gyungock Kim , Ki Seok Jang
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2013-0146375 20131128
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/10 ; H01S5/20

Abstract:
Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
Public/Granted literature
- US20150146755A1 SEMICONDUCTOR LASER AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-05-28
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