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US09231372B2 Semiconductor laser and method of fabricating the same 有权
半导体激光器及其制造方法

Semiconductor laser and method of fabricating the same
Abstract:
Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process.
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