公开(公告)号：US12125907B2

公开(公告)日：2024-10-22

申请号：US17564688

申请日：2021-12-29

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Seong Hyun Lee ,  Dongwoo Suh ,  Sang Hoon Kim ,  Jeong Woo Park ,  Tae Moon Roh

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/7831 ,  H01L27/1203 ,  H01L29/42312 ,  H01L29/42316 ,  H01L29/4232 ,  H01L29/458 ,  H01L29/66484 ,  H01L29/66772

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate including monocrystalline silicon or polycrystalline silicon, a first insulating layer on the semiconductor substrate, the first insulating layer including a local region in which a portion of an upper surface of the first insulating layer is recessed, a channel layer provided in the local region of the first insulating layer, a silicide provided on one side surface of the channel layer, a control gate provided on the channel layer, a gate insulating film provided between the channel layer and the control gate, and a polarity control gate arranged so as to overlap an interface between the channel layer and the silicide, wherein the polarity control gate is spaced apart from the control gate, and the channel layer includes monocrystalline silicon.

公开(公告)号：US09508873B2

公开(公告)日：2016-11-29

申请号：US14339915

申请日：2014-07-24

Applicant: Electronics and Telecommunications Research Institute ,  THE REGENTS OF THE UNIVERSITY OF MICHIGAN

Inventor： Dongwoo Suh ,  Young Jun Kim ,  Wei Lu ,  Lin Chen

IPC: H01L29/40 ,  H01L29/872 ,  H01L29/06 ,  H01L29/41 ,  H01L29/66 ,  H01L29/205 ,  H01L29/20

CPC classification number: H01L29/872 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/413 ,  H01L29/66212

Abstract: Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.

Abstract translation: 提供了肖特基二极管。 肖特基二极管包括：基板; 基材上的核心; 芯上的金属层; 以及围绕所述金属层和所述基板之间的所述芯的外壳并且调节所述芯的费米能级以在所述芯和所述金属层之间形成肖特基结。