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公开(公告)号:US20060256059A1
公开(公告)日:2006-11-16
申请号:US11490630
申请日:2006-07-21
申请人: Dave Stumbo , Stephen Empedocles
发明人: Dave Stumbo , Stephen Empedocles
IPC分类号: G09G3/36
CPC分类号: H01L27/1222 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02F1/13454 , G02F2202/36 , G09G3/20 , G09G3/3648 , G09G2300/08 , G11C13/025 , H01L27/1214 , H01L27/283 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0512
摘要: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.
摘要翻译: 本发明涉及使用纳米线晶体管的显示器。 特别地,描述了使用纳米线像素晶体管,纳米线行晶体管,纳米线列晶体管和纳米线边缘电子器件的液晶显示器。 纳米线像素晶体管用于控制跨越包含液晶的像素施加的电压。 一对纳米线行晶体管用于转换沿着连接到该对纳米线行晶体管的行迹线的导通和截止的纳米线像素晶体管。 纳米线列晶体管用于沿着连接到纳米线柱晶体管的列迹线设置的纳米线像素晶体管施加电压。 还提供了包括有机发光二极管(OLED)显示器,纳米管场效应显示器,等离子体显示器,微镜显示器,微机电(MEM))显示器,电致变色显示器和使用纳米线晶体管的电泳显示器的显示器。
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公开(公告)号:US07701428B2
公开(公告)日:2010-04-20
申请号:US11490630
申请日:2006-07-21
申请人: Dave Stumbo , Stephen Empedocles
发明人: Dave Stumbo , Stephen Empedocles
IPC分类号: G09G3/36
CPC分类号: H01L27/1222 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02F1/13454 , G02F2202/36 , G09G3/20 , G09G3/3648 , G09G2300/08 , G11C13/025 , H01L27/1214 , H01L27/283 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0512
摘要: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.
摘要翻译: 本发明涉及使用纳米线晶体管的显示器。 特别地,描述了使用纳米线像素晶体管,纳米线行晶体管,纳米线列晶体管和纳米线边缘电子器件的液晶显示器。 纳米线像素晶体管用于控制跨越包含液晶的像素施加的电压。 一对纳米线行晶体管用于转换沿着连接到该对纳米线行晶体管的行迹线的导通和截止的纳米线像素晶体管。 纳米线列晶体管用于沿着连接到纳米线柱晶体管的列迹线设置的纳米线像素晶体管施加电压。 还提供了包括有机发光二极管(OLED)显示器,纳米管场效应显示器,等离子体显示器,微镜显示器,微机电(MEM))显示器,电致变色显示器和使用纳米线晶体管的电泳显示器的显示器。
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公开(公告)号:US07102605B2
公开(公告)日:2006-09-05
申请号:US10673669
申请日:2003-09-30
申请人: Dave Stumbo , Stephen Empedocles
发明人: Dave Stumbo , Stephen Empedocles
IPC分类号: G09G3/36
CPC分类号: H01L27/1222 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G02F1/13454 , G02F2202/36 , G09G3/20 , G09G3/3648 , G09G2300/08 , G11C13/025 , H01L27/1214 , H01L27/283 , H01L27/3262 , H01L29/0665 , H01L29/0673 , H01L51/0048 , H01L51/0512
摘要: The present invention is directed to a display using nanowire transistors. In particular, a liquid crystal display using nanowire pixel transistors, nanowire row transistors, nanowire column transistors and nanowire edge electronics is described. A nanowire pixel transistor is used to control the voltage applied across a pixel containing liquid crystals. A pair of nanowire row transistors is used to turn nanowire pixel transistors that are located along a row trace connected to the pair of nanowire row transistors on and off. Nanowire column transistors are used to apply a voltage across nanowire pixel transistors that are located along a column trace connected to a nanowire column transistor. Displays including organic light emitting diodes (OLED) displays, nanotube field effect displays, plasma displays, micromirror displays, micoelectromechanical (MEMs) displays, electrochromic displays and electrophoretic displays using nanowire transistors are also provided.
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公开(公告)号:US07273732B2
公开(公告)日:2007-09-25
申请号:US11490636
申请日:2006-07-21
申请人: Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
发明人: Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
IPC分类号: H01L51/40
CPC分类号: H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译: 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中,提供了纳米线生长和掺杂的方法,包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面,提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面,提供了将纳米线从一个衬底转移到另一个衬底的方法。
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公开(公告)号:US07105428B2
公开(公告)日:2006-09-12
申请号:US11117703
申请日:2005-04-29
申请人: Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
发明人: Yaoling Pan , Xiangfeng Duan , Robert S. Dubrow , Jay L. Goldman , Shahriar Mostarshed , Chunming Niu , Linda T. Romano , Dave Stumbo
CPC分类号: H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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6.
公开(公告)号:US20100285972A1
公开(公告)日:2010-11-11
申请号:US11975104
申请日:2007-10-17
申请人: Roberto Dubrow , Robert Hugh Daniels , J. Wallace Parce , Matthew Murphy , Jim Hamilton , Erik Scher , Dave Stumbo , Chunming Niu , Linda T. Romano , Jay Goldman , Vijendra Sahi , Jeffery A. Whiteford
发明人: Roberto Dubrow , Robert Hugh Daniels , J. Wallace Parce , Matthew Murphy , Jim Hamilton , Erik Scher , Dave Stumbo , Chunming Niu , Linda T. Romano , Jay Goldman , Vijendra Sahi , Jeffery A. Whiteford
CPC分类号: C12N15/87 , B01J20/28007 , B01J20/3242 , B01J2220/54 , B81B3/0089 , B82Y5/00 , B82Y30/00 , H01J49/0418
摘要: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.
摘要翻译: 本发明提供了新颖的纳米纤维增强表面积基底和包括这种基底的结构,以及这种基底的方法和用途。
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公开(公告)号:US20060255481A1
公开(公告)日:2006-11-16
申请号:US11490636
申请日:2006-07-21
申请人: Yaoling Pan , Xiangfeng Duan , Robert Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda Romano , Dave Stumbo
发明人: Yaoling Pan , Xiangfeng Duan , Robert Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda Romano , Dave Stumbo
CPC分类号: H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
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公开(公告)号:US20060159916A1
公开(公告)日:2006-07-20
申请号:US10840794
申请日:2004-05-05
申请人: Robert Dubrow , Robert Daniels , J. Parce , Matthew Murphy , Jim Hamilton , Erik Scher , Dave Stumbo , Chunming Niu , Linda Romano , Jay Goldman , Vijendra Sahi , Jeffery Whiteford
发明人: Robert Dubrow , Robert Daniels , J. Parce , Matthew Murphy , Jim Hamilton , Erik Scher , Dave Stumbo , Chunming Niu , Linda Romano , Jay Goldman , Vijendra Sahi , Jeffery Whiteford
CPC分类号: B01J20/281 , A61L2400/12 , A61M1/1698 , B01J20/28007 , B01J20/28057 , B01J20/3204 , B01J20/321 , B01J20/3212 , B01J20/3219 , B01J20/3234 , B01J20/3236 , B01J20/3246 , B01J20/3265 , B01J20/327 , B01J20/3272 , B01J20/3274 , B01J20/3289 , B01J20/3291 , B01L3/5027 , B01L2200/16 , B01L2300/0636 , B01L2300/0681 , B01L2300/069 , B01L2300/161 , B01L2400/0406 , B82Y30/00 , F28D15/046 , F28F2245/02 , F28F2245/04 , G01N30/92 , G01N33/54346 , G01N33/54393 , H01J49/0418 , Y10S977/762 , Y10S977/764 , Y10S977/773 , Y10S977/813 , Y10S977/904 , Y10T428/29 , Y10T428/2913 , Y10T428/2915 , Y10T428/2918 , Y10T428/292 , Y10T428/2929 , Y10T428/298
摘要: This invention provides novel nanofiber enhanced surface area substrates and structures comprising such substrates, as well as methods and uses for such substrates.
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公开(公告)号:US20060019472A1
公开(公告)日:2006-01-26
申请号:US11117703
申请日:2005-04-29
申请人: Yaoling Pan , Xiangfeng Duan , Robert Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda Romano , Dave Stumbo
发明人: Yaoling Pan , Xiangfeng Duan , Robert Dubrow , Jay Goldman , Shahriar Mostarshed , Chunming Niu , Linda Romano , Dave Stumbo
IPC分类号: H01L21/20 , H01L21/4763
CPC分类号: H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/18 , C30B11/12 , C30B25/00 , C30B29/06 , C30B29/60 , C30B29/605 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02573 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/66477 , H01L29/78 , H01L29/7854 , H01L2924/0002 , Y10S438/962 , Y10S977/742 , Y10S977/743 , Y10S977/843 , Y10S977/891 , H01L2924/00
摘要: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.
摘要翻译: 本发明涉及用于纳米线生长和收获的系统和方法。 在一个实施方案中,提供了纳米线生长和掺杂的方法,包括使用硅前体的组合的用于外延取向的纳米线生长的方法。 在本发明的另一方面,提供了通过使用牺牲生长层来提高纳米线质量的方法。 在本发明的另一方面,提供了将纳米线从一个衬底转移到另一个衬底的方法。
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