公开(公告)号：US12074228B2

公开(公告)日：2024-08-27

申请号：US17850045

申请日：2022-06-27

申请人： UNM RAINFOREST INNOVATIONS

发明人： Sang M. Han ,  Omar Abudayyeh ,  David Wilt ,  Nathan Gapp

IPC分类号： H01L31/02 ,  B82Y40/00 ,  C01B32/158 ,  H01L31/0224 ,  H01L31/05 ,  H01L31/073 ,  H02S40/44 ,  H10K30/82 ,  B82Y30/00

CPC分类号： H01L31/02008 ,  B82Y40/00 ,  C01B32/158 ,  H01L31/0201 ,  H01L31/022425 ,  H01L31/05 ,  H01L31/073 ,  H02S40/44 ,  H10K30/821 ,  B82Y30/00 ,  Y10S977/75 ,  Y10S977/752 ,  Y10S977/842 ,  Y10S977/89 ,  Y10S977/891 ,  Y10S977/901 ,  Y10S977/948

摘要： A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.

公开(公告)号：US20170158959A1

公开(公告)日：2017-06-08

申请号：US15435696

申请日：2017-02-17

申请人： Nanoco Technologies Ltd.

发明人： Nigel Pickett ,  Nathalie Gresty

IPC分类号： C09K11/88 ,  C09K11/70 ,  C09K11/02 ,  C01B19/00 ,  C01G11/02 ,  H01L33/28 ,  C01B25/08 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/32 ,  C09K11/56 ,  C01G9/08

CPC分类号： C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/007 ,  C01B25/082 ,  C01B25/087 ,  C01G9/08 ,  C01G11/02 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  H01L33/002 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  Y10S977/774 ,  Y10S977/891 ,  Y10S977/95

摘要： Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.

公开(公告)号：US09574135B2

公开(公告)日：2017-02-21

申请号：US14463928

申请日：2014-08-20

申请人： Nanoco Technologies Ltd.

发明人： Nigel Pickett ,  Nathalie Gresty

IPC分类号： H01L33/00 ,  H01L33/06 ,  C09K11/88 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C01B19/00 ,  C01B25/08 ,  C01G9/08 ,  C01G11/02 ,  H01L33/30 ,  H01L33/08

CPC分类号： C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/007 ,  C01B25/082 ,  C01B25/087 ,  C01G9/08 ,  C01G11/02 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  H01L33/002 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  Y10S977/774 ,  Y10S977/891 ,  Y10S977/95

摘要： Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.

摘要翻译： 发光材料由具有设置在孔内的量子点（QD）的多孔发光半导体制成。 根据一些实施例，量子点具有在尺寸上与孔的宽度基本相等的直径。 通过将多孔半导体暴露于气体QD前体化合物中，在孔中形成量子点，其在孔内反应以产生量子点。 根据某些实施方案，孔径限制了由气相反应产生的量子点的尺寸。 QD吸收由发光半导体材料发射的光并且以比被吸收的光更长的波长再发光，从而“从半导体材料中”转换“光。

公开(公告)号：US20170044016A1

公开(公告)日：2017-02-16

申请号：US15305994

申请日：2015-04-24

申请人： BNNT, LLC

发明人： Michael W. SMITH ,  Jonathan C. STEVENS ,  Kevin C. JORDAN ,  R. Roy WHITNEY

IPC分类号： C01B21/064 ,  H01L23/373 ,  D01F9/08

CPC分类号： C01B21/0641 ,  B82Y30/00 ,  B82Y40/00 ,  C01B35/146 ,  C01P2004/13 ,  D01F9/08 ,  H01L21/00 ,  H01L23/373 ,  H01L23/3731 ,  H01L2924/0002 ,  Y10S977/762 ,  Y10S977/891 ,  H01L2924/00

摘要： Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

摘要翻译： 本文描述了用于连续生产具有很少缺陷和良好对准的BNNT纤维，BNNT链和BNNT初始纱线的装置，系统和方法。 BNNT可以通过在加压氮气存在下热激发室中的硼原料而形成。 鼓励BNNT在生长区内自组装成对准的BNNT纤维，并通过氮气流动方向和速度的各种组合，热源分布，温度梯度和室几何形状形成BNNT丝束和BNNT初始纱线。

公开(公告)号：US20160336474A1

公开(公告)日：2016-11-17

申请号：US15150824

申请日：2016-05-10

申请人： THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

发明人： CHERIE R. KAGAN ,  AARON T. FAFARMAN ,  JI-HYUK CHOI ,  WEON-KYU KOH ,  DAVID K. KIM ,  SOONG JU OH ,  YUMING LAI ,  SUNG-HOON HONG ,  SANGAMESHWAR RAO SAUDARI ,  CHRISTOPHER B. MURRAY

IPC分类号： H01L31/07 ,  H01L31/032

CPC分类号： H01L31/07 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y40/00 ,  H01B1/06 ,  H01L29/0665 ,  H01L29/127 ,  H01L29/18 ,  H01L29/22 ,  H01L29/2203 ,  H01L29/24 ,  H01L29/413 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L31/0324 ,  H01L31/18 ,  Y02E10/50 ,  Y10S977/891 ,  Y10S977/938 ,  Y10S977/954

摘要： Methods of forming colloidal nanocrystal (NC)-based thin film devicesare disclosed. The methods include the steps of depositing a dispersion of NCs on a substrate to form a NC thin-film, wherein at least a portion of the NCs is capped with chalcogenocyanate (xCN)-based ligands; and doping the NC thin-film with a metal.

摘要翻译： 公开了形成胶体纳米晶体（NC）的薄膜器件的方法。 所述方法包括以下步骤：将NC分散体沉积在基底上以形成NC薄膜，其中至少部分NC用硫属异氰酸酯（xCN）为基础的配体封端; 并用金属掺杂NC薄膜。

公开(公告)号：US09373547B1

公开(公告)日：2016-06-21

申请号：US14827084

申请日：2015-08-14

申请人： Sang M. Han ,  Talid R. Sinno

发明人： Sang M. Han ,  Talid R. Sinno

IPC分类号： H01L21/02 ,  H01L51/00 ,  H01L21/8234 ,  H01L21/324

CPC分类号： H01L21/02601 ,  B82Y40/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/3245 ,  H01L21/823493 ,  Y10S977/774 ,  Y10S977/814 ,  Y10S977/819 ,  Y10S977/891

摘要： Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms having a different size than the second atoms; providing an indenter template that includes at least one indenter structure extending from a surface of the indenter template; contacting the layer and the at least one indenter structure together with a pressure sufficient to generate an elastic deformation in the layer but without generating plastic deformation of the layer; annealing the layer; and forming at least one quantum confined structure in a region of the layer in a region of the layer not pressed by the at least one indenter structure.

摘要翻译： 提供一种用于形成半导体量子限制结构的二维阵列的方法。 该方法包括提供具有第一原子和第二原子的层，第一原子具有与第二原子不同的大小; 提供压头模板，其包括从压头模板的表面延伸的至少一个压头结构; 使所述层和所述至少一个压头结构与足以在所述层中产生弹性变形但不产生所述层的塑性变形的压力接触; 退火层; 以及在所述层的未被所述至少一个压头结构压制的区域中的所述层的区域中形成至少一个量子限制结构。

公开(公告)号：US20160137502A1

公开(公告)日：2016-05-19

申请号：US14944136

申请日：2015-11-17

申请人： MICHIGAN TECHNOLOGICAL UNIVERSITY

发明人： Sawyer Hopkins ,  Dongyan Zhang ,  Boyi Hao ,  Anjana Asthana ,  Yoke Khin Yap

IPC分类号： C01B21/064 ,  C23C16/56 ,  C23C16/01 ,  C09K5/14 ,  C23C16/34

CPC分类号： C01B21/0641 ,  B82Y30/00 ,  B82Y40/00 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/24 ,  C09K5/14 ,  C23C16/01 ,  C23C16/342 ,  C23C16/56 ,  Y10S977/755 ,  Y10S977/891

摘要： This disclosure provides boron nitride nanosheets, and methods of making and using the same. The boron nitride nanosheets may be made by heating solid boron, magnesium oxide and iron oxide compounds in a furnace in the presence of ammonia gas and a substrate, such that the boron nitride nanosheet is deposited on the substrate, where the boron nitride nanosheet comprises a first end, a second end, and a sheet between the first and second ends, where the first end is engaged with the substrate and the sheet extends upward away from the substrate and then curls back towards the substrate so that the second end is oriented towards the substrate.

摘要翻译： 本公开提供了氮化硼纳米片，以及制造和使用氮化硼纳米片的方法。 氮化硼纳米片可以通过在氨气和衬底的存在下在炉中加热固体硼，氧化镁和氧化铁化合物，使得氮化硼纳米片沉积在衬底上，其中氮化硼纳米片包含 第一端，第二端和在第一端和第二端之间的片材，其中第一端与衬底接合，并且片材向上远离衬底延伸，然后朝向衬底卷曲，使得第二端朝向 底物。

公开(公告)号：US09123695B2

公开(公告)日：2015-09-01

申请号：US14385450

申请日：2013-03-11

申请人： POSTECH ACADEMY—INDUSTRY FOUNDATION

发明人： ChangKi Baek ,  TaiUk Rim ,  MyungDong Ko

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/66 ,  H01L29/10 ,  B82Y15/00

CPC分类号： H01L29/42392 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  H01L29/0676 ,  H01L29/1025 ,  H01L29/66439 ,  H01L29/775 ,  Y10S977/891 ,  Y10S977/938

摘要： Provided are a nanowire field-effect transistor and a method for manufacturing the same. The nanowire field-effect transistor can enable a source region to be positioned, with respect to an asymmetrical nanowire channel, adjacent to a region in which the diameter of the nanowire channel is large, can enable a drain region to be positioned adjacent to a region in which the diameter of the nanowire channel is small, can enable an ON current to be increased in a state in which a threshold voltage level is kept the same, and can enable the current drivability of a gate electrode to be improved.

摘要翻译： 提供一种纳米线场效应晶体管及其制造方法。 纳米线场效应晶体管可以使得源区域相对于不对称的纳米线通道被定位，所述非对称纳米线通道与纳米线通道的直径大的区域相邻，可以使漏极区域邻近区域 其中纳米线通道的直径小，能够使阈值电压水平保持相同的状态下的导通电流增加，能够提高栅电极的电流驱动能力。

公开(公告)号：US20150232689A1

公开(公告)日：2015-08-20

申请号：US14698253

申请日：2015-04-28

申请人： Board of Regents,The University of Texas System

发明人： Carlton Grant Willson ,  William J. Durand ,  Christopher John Ellison ,  Christopher M. Bates ,  Takehiro Seshimo ,  Julia Cushen ,  Logan J. Santos ,  Leon Dean ,  Erica L. Rausch

IPC分类号： C09D153/00 ,  C03C17/30 ,  C03C17/34

CPC分类号： C09D153/00 ,  B29C43/32 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  C03C17/30 ,  C03C17/3405 ,  C03C2218/152 ,  C23C16/44 ,  G03F7/0002 ,  Y10S977/788 ,  Y10S977/809 ,  Y10S977/811 ,  Y10S977/839 ,  Y10S977/888 ,  Y10S977/89 ,  Y10S977/891 ,  Y10T428/24802 ,  Y10T428/31504 ,  Y10T428/31663 ,  Y10T428/31931

摘要： The present invention uses vacuum deposited thin films of material to create an interface that non-preferentially interacts with different domains of an underlying block copolymer film. The non-preferential interface prevents formation of a wetting layer and influences the orientation of domains in the block copolymer. The purpose of the deposited polymer is to produce nanostructured features in a block copolymer film that can serve as lithographic patterns.

摘要翻译： 本发明使用真空沉积的材料薄膜来产生与下面的嵌段共聚物膜的不同区域非优先相互作用的界面。 非优选界面防止形成润湿层并影响嵌段共聚物中结构域的取向。 沉积的聚合物的目的是在嵌段共聚物膜中产生可用作光刻图案的纳米结构特征。

公开(公告)号：US08906733B2

公开(公告)日：2014-12-09

申请号：US12911657

申请日：2010-10-25

申请人： Ruxandra Vidu ,  Brian Argo ,  John Argo ,  Pieter Stroeve ,  Saif Islam ,  Jie-Ren Ku ,  Michael Chen

发明人： Ruxandra Vidu ,  Brian Argo ,  John Argo ,  Pieter Stroeve ,  Saif Islam ,  Jie-Ren Ku ,  Michael Chen

IPC分类号： H01L31/0236 ,  C30B25/00 ,  C23C28/00 ,  C23C14/34 ,  H01L31/0216 ,  B82Y40/00 ,  B82Y30/00 ,  H01L31/052 ,  H01L31/0352 ,  B82Y10/00 ,  H01L31/18 ,  H01L31/068

CPC分类号： H01L31/035227 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/0352 ,  H01L31/035272 ,  H01L31/043 ,  H01L31/052 ,  H01L31/0525 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/547 ,  Y10S977/762 ,  Y10S977/891 ,  Y10S977/948 ,  Y10T428/12993 ,  Y10T428/2978

摘要： A method for creating a nanostructure according to one embodiment includes depositing material in a template for forming an array of nanocables; removing only a portion of the template such that the template forms an insulating layer between the nanocables; and forming at least one layer over the nanocables. A nanostructure according to one embodiment includes a nanocable having a roughened outer surface and a solid core. A nanostructure according to one embodiment includes an array of nanocables each having a roughened outer surface and a solid core, the roughened outer surface including reflective cavities; and at least one layer formed over the roughened outer surfaces of the nanocables, the at least one layer creating a photovoltaically active p-n junction. Additional systems and methods are also presented.

摘要翻译： 根据一个实施方案的用于形成纳米结构的方法包括在用于形成纳米线阵列的模板中沉积材料; 仅去除模板的一部分，使得模板在纳米覆盖物之间形成绝缘层; 以及在所述纳米覆盖物上形成至少一个层。 根据一个实施方案的纳米结构包括具有粗糙化的外表面和固体核的纳米结构。 根据一个实施例的纳米结构包括每个具有粗糙化的外表面和实心芯的纳米线阵列，粗糙化的外表面包括反射腔; 以及至少一个层，形成在所述纳米覆盖物的粗糙化的外表面上，所述至少一个层产生光伏活性p-n结。 还介绍了其他系统和方法。