公开(公告)号：US20240199420A1

公开(公告)日：2024-06-20

申请号：US18441523

申请日：2024-02-14

申请人： THE UNIVERSITY OF WESTERN AUSTRALIA

发明人： Sehrina Muzahid ESHON ,  Hui Tong CHUA ,  Weike ZHANG

IPC分类号： C01B21/064 ,  B82Y40/00

CPC分类号： C01B21/0648 ,  B82Y40/00 ,  C01P2002/01 ,  C01P2002/70 ,  C01P2002/85 ,  C01P2002/90 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/24 ,  C01P2004/30 ,  C01P2004/64

摘要： The present invention relates to a method for producing boron nitride nanostructures, the method comprising subjecting boron nitride precursor material to lamp ablation within an adiabatic radiative shielding environment. The nanostructures produced may include nano-onion structures. The boron nitride precursor material subjected to lamp ablation may include amorphous boron nitride, hexagonal boron nitride, cubic boron nitride, wurtzite boron nitride or a combination of two or more thereof.

公开(公告)号：US12006210B2

公开(公告)日：2024-06-11

申请号：US17661805

申请日：2022-05-03

申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

发明人： Aidin Fathalizadeh ,  Thang Pham ,  William Mickelson ,  Alexander Zettl

IPC分类号： C01B21/064 ,  B01J19/08 ,  B82Y40/00 ,  C04B35/583 ,  C04B35/622 ,  B82Y30/00

CPC分类号： C01B21/0641 ,  B01J19/08 ,  B82Y40/00 ,  C01B21/064 ,  C04B35/583 ,  C04B35/622 ,  B01J2219/0879 ,  B01J2219/0894 ,  B82Y30/00 ,  C01P2002/82 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/13 ,  C01P2004/24 ,  C04B2235/5276 ,  C04B2235/5284 ,  C04B2235/5454 ,  C04B2235/767 ,  C04B2235/95 ,  Y10S977/762 ,  Y10S977/896

摘要： This disclosure provides systems, methods, and apparatus related to boron nitride nanomaterials. In one aspect, a method includes generating a directed flow of plasma. A boron-containing species is introduced to the directed flow of the plasma. Boron nitride nanostructures are formed in a chamber. In another aspect, a method includes generating a directed flow of plasma using nitrogen gas. A boron-containing species is introduced to the directed flow of the plasma. The boron-containing species can consist of boron powder, boron nitride powder, and/or boron oxide powder. Boron nitride nanostructures are formed in a chamber, with a pressure in the chamber being about 3 atmospheres or greater.

公开(公告)号：US20240158231A1

公开(公告)日：2024-05-16

申请号：US18073492

申请日：2022-12-01

申请人： Naieel Technology Inc.

发明人： Zahid Hanif ,  Ki In CHOI ,  Jae Woo KIM

IPC分类号： C01B21/064

CPC分类号： C01B21/0648 ,  B82Y40/00 ,  C01P2004/13

摘要： Provided is a surface-treated boron nitride nanotubes including a boron nitride nanotubes, and a first layer located on at least a portion of a surface of the boron nitride nanotubes, wherein the first layer forms Pi (π) bonds with the boron nitride nanotubes, and the first layer includes hydroxyphenyl groups.

公开(公告)号：US11919771B2

公开(公告)日：2024-03-05

申请号：US17496513

申请日：2021-10-07

申请人： BNNT, LLC

发明人： Michael W. Smith ,  Kevin C. Jordan ,  Jonathan C. Stevens ,  R. Roy Whitney

IPC分类号： C01B21/064 ,  B01J10/00 ,  B01J19/00 ,  B82Y30/00 ,  C04B35/622

CPC分类号： C01B21/0641 ,  B01J10/005 ,  B01J19/0013 ,  C04B35/6229 ,  B01J2219/00132 ,  B82Y30/00 ,  C01P2004/01 ,  C01P2004/04 ,  C01P2004/13 ,  C04B2235/386 ,  C04B2235/404 ,  C04B2235/421

摘要： High quality, catalyst-free boron nitride nanotubes (BNNTs) that are long, flexible, have few wall molecules and few defects in the crystalline structure, can be efficiently produced by a process driven primarily by Direct Induction. Secondary Direct Induction coils, Direct Current heaters, lasers, and electric arcs can provide additional heating to tailor the processes and enhance the quality of the BNNTs while reducing impurities. Heating the initial boron feed stock to temperatures causing it to act as an electrical conductor can be achieved by including refractory metals in the initial boron feed stock, and providing additional heat via lasers or electric arcs. Direct Induction processes may be energy efficient and sustainable for indefinite period of time. Careful heat and gas flow profile management may be used to enhance production of high quality BNNT at significant production rates.

公开(公告)号：US20230406705A1

公开(公告)日：2023-12-21

申请号：US18036973

申请日：2021-11-12

申请人： PROTERIAL, LTD. ,  NARA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Tadashi Fujieda ,  Yoshiyuki Nonoguchi ,  Florencio Delen De Los Reyes ,  Tsuyoshi Kawai ,  Akifumi Takeuchi

IPC分类号： C01B21/064

CPC分类号： C01B21/0648 ,  C01P2004/13 ,  C01P2002/01

摘要： The purpose of the present invention is to provide a method for producing boron nitride nanotubes, said method reducing the ratio of by-products having less reinforcing effects such as boron nitride fullerenes and boron nitride thin pieces, while enhancing the yield at the same time, without requiring a thermal oxidation treatment. The present invention provides a method for producing boron nitride nanotubes, said method being characterized by comprising: a step for obtaining a suspension by mixing a starting material that contains boron nitride nanotubes, a nonionic polymer dispersant having an sp3-bonded CH group, and an organic solvent; and a step for obtaining a dispersion liquid containing boron nitride nanotubes by subjecting the thus-obtained suspension to centrifugal separation, thereby removing by-products contained in the starting material.

公开(公告)号：US11845658B2

公开(公告)日：2023-12-19

申请号：US17795796

申请日：2021-08-02

申请人： SUMITOMO ELECTRIC HARDMETAL CORP. ,  SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Yuh Ishida ,  Satoru Kukino

IPC分类号： C01B21/064 ,  C09K5/14

CPC分类号： C01B21/064 ,  C09K5/14 ,  C01P2002/60 ,  C01P2002/74 ,  C01P2002/76 ,  C01P2006/10 ,  C01P2006/32 ,  C01P2006/80

摘要： A polycrystalline cubic boron nitride comprising 99.5% by volume or more of cubic boron nitride, wherein the polycrystalline cubic boron nitride has a heat conductivity of 300 W/mK or more, the polycrystalline cubic boron nitride has a carbon content of 100 ppm or more and 1000 ppm or less in terms of mass, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of 0.9 μm or more and 10 μm or less.

公开(公告)号：US20230340281A1

公开(公告)日：2023-10-26

申请号：US17956980

申请日：2022-09-30

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Sang seok LEE ,  Dong Su LEE ,  Se Gyu JANG ,  Yongho JOO ,  Sukang BAE ,  Seokhoon AHN ,  Dae-Young JEON ,  Jangyup SON ,  Jungwon KIM

IPC分类号： C09D7/45 ,  C01B32/174 ,  C01B32/159 ,  C01B21/064 ,  C09D1/00 ,  C09D7/65

CPC分类号： C09D7/45 ,  C01B32/174 ,  C01B32/159 ,  C01B21/0648 ,  C09D1/00 ,  C09D7/65 ,  C01B2202/02 ,  C01B2202/28 ,  C01P2004/13 ,  C01P2006/22

摘要： A nanotube dispersion, a nanotube film manufactured using the same, and a manufacturing method thereof are provided. The nanotube dispersion comprises a nanotube, a nanotube dispersant including at least one selected from a compound represented by a chemical formula 1 and a salt thereof, and a solvent including one selected from an organic solvent, water, and a mixture thereof.

公开(公告)号：US11732173B2

公开(公告)日：2023-08-22

申请号：US17588757

申请日：2022-01-31

申请人： DENKA COMPANY LIMITED

发明人： Go Takeda ,  Yoshitaka Taniguchi

IPC分类号： C08K5/14 ,  C09K5/14 ,  C01B21/064 ,  C08K3/38 ,  C08K9/02 ,  C08K9/04 ,  C09C3/00 ,  C09C3/04 ,  C09C3/06 ,  C09C3/08

CPC分类号： C09K5/14 ,  C01B21/0645 ,  C01B21/0648 ,  C08K3/38 ,  C08K9/02 ,  C08K9/04 ,  C09C3/006 ,  C09C3/041 ,  C09C3/066 ,  C09C3/08 ,  C01P2002/76 ,  C01P2004/03 ,  C01P2004/50 ,  C01P2004/61 ,  C01P2004/80 ,  C01P2006/32 ,  C08K2003/385 ,  C08K2201/001 ,  C08K2201/004 ,  C08K2201/005

摘要： A surface-treated aggregated boron nitride powder is prepared by using the boron nitride powder as the raw material, adding an oxidizer to the boron nitride aggregated grains, wet-pulverizing or wet-crushing the grains for surface modification treatment of the particles and allowing reaction of the particles with a metal coupling agent. The surface-treated boron nitride aggregated grains are formed by aggregation of hexagonal h-BN primary particles; (B) have any one or more of Si, Ti, Zr, Ce, Al, Mg, Ge, Ga, and V in an amount of 0.1 atm % or more and 3.0 atm % or less in its composition on the surface of 10 nm; (C) have a crushing strength of 5 MPa or more; and (D) have an average particle diameter of 20 μm or more and 100 μm or less.

公开(公告)号：US20230134671A1

公开(公告)日：2023-05-04

申请号：US17910984

申请日：2021-03-10

申请人： TOKUYAMA CORPORATION

发明人： Yuichi IKEDA ,  Shota DAIKI ,  Kyoichi FUJINAMI ,  Teruhiko NAWATA

IPC分类号： C01B21/064

摘要： Provided is a method for producing, with a small amount of lithium, a hexagonal boron nitride powder containing thick hexagonal boron nitride particles. A method for producing a hexagonal boron nitride powder, including the steps of: preparing a mixed powder which contains an organic compound containing nitrogen atoms, a boron source which contains boron atoms whose molar ratio with respect to the nitrogen atoms is adjusted to be 0.26 or more and 0.67 or less, and an alkali metal in which lithium atoms are adjusted to be in a range of 30 mol % or more and less than 100 mol %, the alkali metal being present such that a molar ratio of the boron atoms with respect to alkali metal atoms contained in the alkali metal is 0.75 or more and 3.35 or less; and heating the mixed powder at a maximum temperature of 1200° C. or higher and 1500° C. or lower.

公开(公告)号：US20230085533A1

公开(公告)日：2023-03-16

申请号：US17553193

申请日：2021-12-16

申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

发明人： Se Gyu JANG ,  Hong Jin LIM ,  Seok Hoon AHN ,  Hun Su LEE ,  Yong Ho JOO ,  Sang Seok LEE ,  Hyun Jin CHO

IPC分类号： C01B21/064 ,  C09K19/06 ,  C09K19/54 ,  D01F8/18 ,  D01D5/06

摘要： The present invention comprises the steps of contacting a boron nitride nanotube and a stabilizer in a solvent, and removing a portion of the solvent to obtain a liquid crystal composition including a liquid crystal in which at least a portion of the stabilizer is adsorbed on the surface of the boron nitride nanotube.