公开(公告)号：US20110195010A1

公开(公告)日：2011-08-11

申请号：US12807344

申请日：2010-09-01

Applicant: Jae il Kim ,  Seung Mi Lee ,  Mi Yang Kim

Inventor： Jae il Kim ,  Seung Mi Lee ,  Mi Yang Kim

IPC: C01B25/00 ,  B82Y20/00

CPC classification number: C01B25/082 ,  B82Y40/00

Abstract: Disclosed herein is a method of forming a spherical InP quantum dot, including: providing a compound containing indium (In); dissolving the compound in alcohol to form a solution; and introducing a compound containing phosphorus (P) into the solution. The method is advantageous because a spherical InP quantum dot can be formed, the method is environment-friendly because alcohol is used as a solvent, because InP quantum dots can be produced in large quantities because the InP quantum dots can be formed while putting all reactants into a reactor and slowly heating the reactants, and because the desired InP quantum dots can be easily recovered by decreasing the temperature of a reactor or by performing centrifugal separation at low speed.

Abstract translation: 本文公开了形成球形InP量子点的方法，包括：提供含铟（In）的化合物; 将化合物溶解在醇中以形成溶液; 并将含磷（P）的化合物引入溶液中。 该方法是有利的，因为可以形成球形InP量子点，因为使用醇作为溶剂，该方法是环境友好的，因为可以大量生成InP量子点，因为可以在放入所有反应物的同时形成InP量子点 进入反应器并缓慢加热反应物，并且因为通过降低反应器的温度或通过低速进行离心分离可以容易地回收所需的InP量子点。

公开(公告)号：US07588828B2

公开(公告)日：2009-09-15

申请号：US11852748

申请日：2007-09-10

Applicant: Imrana Mushtaq ,  Steven Daniels ,  Nigel Pickett

Inventor： Imrana Mushtaq ,  Steven Daniels ,  Nigel Pickett

IPC: B32B5/66

CPC classification number: C30B29/60 ,  C01B25/082 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996

Abstract: Nanoparticles including a molecular cluster compound incorporating ions from groups 12 and 16 of the periodic table, as well as a core semiconductor material incorporating ions from groups 13 and 15 of the periodic table, are fabricated. The core semiconductor material is provided on the molecular cluster compound.

Abstract translation: 包括包含周期表第12和16族的离子的分子簇化合物的纳米颗粒以及包含周期表的第13和15族的离子的芯半导体材料。 核心半导体材料提供在分子簇化合物上。

公开(公告)号：US4162293A

公开(公告)日：1979-07-24

申请号：US754518

申请日：1976-12-27

Applicant: Klaus Zeuch

Inventor： Klaus Zeuch

IPC: B01J3/04 ,  C01B25/08 ,  B01J17/26

CPC classification number: B01J3/04 ,  C01B25/082 ,  C01B25/087

Abstract: Apparatus for the preparation of a semiconductor compound having one component with a substantially higher vapor pressure than the other using a closed horizontal ampule in a pressure vessel with the two ends of the ampule located in respective heating ovens in which the ampule is self supporting without a support tube in the zone between the heating ovens thereby permitting this zone, which is highly heated by means of an inductive heating apparatus or the like, to be cooled directly by means of a cooling gas circulating in the pressure vessel and in which the coupling of the heating means to a graphite boat or the like inside the ampule is improved.

Abstract translation: 用于制备半导体化合物的装置，其具有比另一种组件具有显着更高的蒸汽压的组分，所述组分具有在压力容器中的封闭的水平安瓿，其中安瓿的两端位于相应的加热炉中，其中安瓿是自支撑的， 支撑管在加热炉之间的区域中，从而允许通过感应加热装置等高度加热的该区域将通过在压力容器中循环的冷却气体直接冷却，其中耦合 在安瓿内的石墨舟等的加热装置得到改善。

公开(公告)号：US08753592B2

公开(公告)日：2014-06-17

申请号：US12744157

申请日：2008-09-19

Applicant: Tim Strupeit ,  Horst Weller ,  Andreas Kornowski

Inventor： Tim Strupeit ,  Horst Weller ,  Andreas Kornowski

IPC: C01B25/08 ,  C01G28/00 ,  C01G15/00

CPC classification number: C01B25/087 ,  B82Y30/00 ,  C01B25/08 ,  C01B25/082 ,  C01G15/00 ,  C01G28/00 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/04 ,  C01P2004/64 ,  C30B7/00 ,  C30B29/40

Abstract: A method for the manufacture of a III-V compound in the form of nanoparticles, such as those used in semi-conductors. The reaction proceeds at atmospheric pressure in a reaction solution by the reaction of a III compound source and a V compound source. The reaction proceeds in solvent of high boiling point. The solvent contains a stabilizer and a base. The manufactured III-V compound is precipitated from the reaction solution, isolated, purified and analyzed.

Abstract translation: 用于制造纳米颗粒形式的III-V化合物的方法，例如半导体中使用的那些。 反应在大气压下通过III化合物源和V化合物源的反应在反应溶液中进行。 反应在高沸点溶剂中进行。 溶剂含有稳定剂和碱。 制备的III-V化合物从反应溶液中沉淀出来，分离，纯化和分析。

公开(公告)号：US08679543B2

公开(公告)日：2014-03-25

申请号：US13002035

申请日：2009-07-02

Applicant: Joseph Bartel ,  Yongfen Chen ,  Eric Tulsky ,  Joseph Treadway

Inventor： Joseph Bartel ,  Yongfen Chen ,  Eric Tulsky ,  Joseph Treadway

IPC: A61K9/14

CPC classification number: G01N21/6486 ,  B82Y5/00 ,  B82Y15/00 ,  C01B25/082 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  C30B7/00 ,  C30B29/40 ,  C30B29/48 ,  C30B29/60 ,  G01N33/588 ,  H01L21/02392 ,  H01L21/02557 ,  H01L21/02601 ,  H01L21/02628 ,  H01L33/06

Abstract: Nanocrystals having an indium-based core and methods for making them and using them to construct core-shell nanocrystals are described. These core-shell nanocrystals are highly stable and provide higher quantum yields than known nanocrystals of similar composition, and they provide special advantages for certain applications because of their small size.

Abstract translation: 描述了具有铟基核的纳米晶体及其制备方法和用于构建核壳纳米晶体的方法。 这些核 - 壳纳米晶体是高度稳定的并且提供比已知具有类似组成的纳米晶体更高的量子产率，并且由于它们的小尺寸，它们为某些应用提供了特殊的优点。

公开(公告)号：US08545736B2

公开(公告)日：2013-10-01

申请号：US13556811

申请日：2012-07-24

Applicant: Shin Ae Jun ,  Eun Joo Jang ,  Jung Eun Lim

Inventor： Shin Ae Jun ,  Eun Joo Jang ,  Jung Eun Lim

IPC: H01B1/02

CPC classification number: C01B19/007 ,  B82Y30/00 ,  C01B25/08 ,  C01B25/082 ,  C01G11/02 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  Y10T428/2982

Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

Abstract translation: 本文公开了使用亚磷酸酯化合物作为磷前体制备金属磷化物纳米晶体的方法。 更具体地，本文公开的是通过在溶剂中使金属前体与亚磷酸酯化合物反应制备金属磷化物纳米晶体的方法。 还提供了一种通过在溶剂中使金属前体与亚磷酸酯化合物反应来钝化纳米晶核的表面上的金属磷化物层的方法。 金属磷化物纳米晶体具有均匀的粒径和各种形状。

公开(公告)号：US20080258159A1

公开(公告)日：2008-10-23

申请号：US11970972

申请日：2008-01-08

Applicant: Shin Ae JUN ,  Eun Joo JANG ,  Jung Eun LIM

Inventor： Shin Ae JUN ,  Eun Joo JANG ,  Jung Eun LIM

IPC: H01L33/00 ,  B05D5/00 ,  C01B15/16

CPC classification number: C01B19/007 ,  B82Y30/00 ,  C01B25/08 ,  C01B25/082 ,  C01G11/02 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2004/80 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  Y10T428/2982

Abstract: Disclosed herein is a method for the preparation of metal phosphide nanocrystals using a phosphite compound as a phosphorous precursor. More specifically, disclosed herein is a method for preparing metal phosphide nanocrystals by reacting a metal precursor with a phosphite compound in a solvent. A method is also provided for passivating a metal phosphide layer on the surface of a nanocrystal core by reacting a metal precursor with a phosphite compound in a solvent. The metal phosphide nanocrystals have uniform particle sizes and various shapes.

Abstract translation: 本文公开了使用亚磷酸酯化合物作为磷前体制备金属磷化物纳米晶体的方法。 更具体地，本文公开的是通过在溶剂中使金属前体与亚磷酸酯化合物反应制备金属磷化物纳米晶体的方法。 还提供了一种通过在溶剂中使金属前体与亚磷酸酯化合物反应来钝化纳米晶核的表面上的金属磷化物层的方法。 金属磷化物纳米晶体具有均匀的粒径和各种形状。

公开(公告)号：US20080160306A1

公开(公告)日：2008-07-03

申请号：US11852748

申请日：2007-09-10

Applicant: Imrana Mushtaq ,  Steven Daniels ,  Nigel Pickett

Inventor： Imrana Mushtaq ,  Steven Daniels ,  Nigel Pickett

IPC: C30B29/10 ,  B32B5/16

CPC classification number: C30B29/60 ,  C01B25/082 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  C09K11/883 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996

Abstract: Nanoparticles including a molecular cluster compound incorporating ions from groups 12 and 16 of the periodic table, as well as a core semiconductor material incorporating ions from groups 13 and 15 of the periodic table, are fabricated. The core semiconductor material is provided on the molecular cluster compound.

Abstract translation: 包括包含周期表第12和16族的离子的分子簇化合物的纳米颗粒以及包含周期表的第13和15族的离子的芯半导体材料。 核心半导体材料提供在分子簇化合物上。

公开(公告)号：US09281447B2

公开(公告)日：2016-03-08

申请号：US14092715

申请日：2013-11-27

Applicant: FUJIFILM Corporation

Inventor： Makoto Kikuchi

IPC: C09K11/70 ,  C09K11/62 ,  H01L33/30 ,  B82Y40/00 ,  C01B25/08 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/56

CPC classification number: H01L33/30 ,  B82Y30/00 ,  B82Y40/00 ,  C01B25/082 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70

Abstract: The method for synthesizing indium phosphide nanoparticles using indium trichloride as an indium raw material and tris(dimethylamino)phosphine as a phosphorus raw material, includes a preparation step of mixing the indium raw material, the phosphorus raw material, an organic solvent having a boiling point of 170° C. or higher, and a particle surface ligand to obtain a mixture solution and a synthesis step of synthesizing the indium phosphide nanoparticles by heating the mixture solution to 150° C. or higher but lower than 170° C. In the method, the particle surface ligand is an aliphatic amine having a carbon number of 18 or more, and the indium trichloride is an anhydride.

Abstract translation: 使用三氯化铟作为铟原料和作为磷原料的三（二甲基氨基）膦合成磷化铟纳米颗粒的方法包括将铟原料，磷原料，沸点有机溶剂混合的制备步骤 为170℃以上，通过将混合溶液加热至150℃以上且170℃以下，得到混合溶液的粒子表面配体和合成磷化铟纳米粒子的合成步骤。在该方法 颗粒表面配体是碳数为18以上的脂肪族胺，三氯化铟为酸酐。

公开(公告)号：US20150053916A1

公开(公告)日：2015-02-26

申请号：US14463928

申请日：2014-08-20

Applicant: Nanoco Technologies Ltd.

Inventor： Nigel Pickett ,  Nathalie Gresty

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/28 ,  H01L33/00

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/007 ,  C01B25/082 ,  C01B25/087 ,  C01G9/08 ,  C01G11/02 ,  C01P2002/84 ,  C01P2004/64 ,  C01P2006/60 ,  C09K11/02 ,  C09K11/565 ,  C09K11/70 ,  H01L33/002 ,  H01L33/0087 ,  H01L33/06 ,  H01L33/08 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  Y10S977/774 ,  Y10S977/891 ,  Y10S977/95

Abstract: Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby “down-converting” light from the semiconductor material.

Abstract translation: 发光材料由具有设置在孔内的量子点（QD）的多孔发光半导体制成。 根据一些实施例，量子点具有在尺寸上与孔的宽度基本相等的直径。 通过将多孔半导体暴露于气体QD前体化合物中，在孔中形成量子点，其在孔内反应以产生量子点。 根据某些实施方案，孔径限制了由气相反应产生的量子点的尺寸。 QD吸收由发光半导体材料发射的光并且以比被吸收的光更长的波长再发光，从而“从半导体材料中”转换“光。