摘要:
A broad-band photodetector utilizes perovskite hybrid material and quantum dots as light harvesters. In particular, the photodetector is configured so that the structural defects on the surface of a quantum dot layer are passivated with perovskite hybrid material. As a result, the trap states on the surface of the quantum dot material is reduced, allowing leakage currents in the quantum dot material to be significantly reduced. As such, the photodetector is able to achieve broad-band operation, with enhanced photoresponsitivity and detectivity.
摘要:
A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film containing at least one type of a nanocrystal quantum-dot, whereby the nanocrystal quantum dots are spaced by ligands to form a lattice, and the lattice of the quantum dots has an infill material that forms an inorganic matrix that isolates the nanocrystal quantum dots from atmospheric exposure.
摘要:
A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
摘要:
A broad-band photodetector utilizes perovskite hybrid material and quantum dots as light harvesters. In particular, the photodetector is configured so that the structural defects on the surface of a quantum dot layer are passivated with perovskite hybrid material. As a result, the trap states on the surface of the quantum dot material is reduced, allowing leakage currents in the quantum dot material to be significantly reduced. As such, the photodetector is able to achieve broad-band operation, with enhanced photoresponsitivity and detectivity.
摘要:
A surface-modified quantum dot luminophore includes a quantum dot luminophore and a coating includes a fluorinated coating including a fluorinated inorganic agent, a fluorinated organic agent, or a combination of fluorinated inorganic and organic agents, the fluorinated coating generating hydrophobic surface sites and the coating is disposed on the surface of the silicate luminophore.
摘要:
A method of forming a field effect transistor includes forming a source region and a drain region in a semiconductor material, forming a channel region between the source region and the drain region, forming an insulating layer over the channel region, forming a floating gate layer of electrically conducting material over the insulating layer, forming a layer of an insulating material over the floating gate layer, and forming a gate electrode overlying the layer of insulating material.
摘要:
This disclosure concerns a method of making nanowires in a single flask and in non-coordinating solvent involving the reaction of PbO with oleic acid to produce Pb oleate, heating the Pb oleate to a preferred temperature with additional coordinating ligands, injecting a solution of Se to produce a second solution, heating the second solution, and maintaining the temperature, resulting in nucleation and growth of PbSe nanowires.
摘要:
A PbSe nanowire having an aspect ratio of about 100:1 and having a diameter of less than 20 nm. A PbSe nanowire produced by the process comprising reacting PbO with oleic acid in 1-octadecene or other non-coordinating solvent and producing Pb oleate in a flask, heating the Pb oleate to between 225 and 275 C under inert gas, injecting a first solution of Se dissolved in trialkylphosphine into the flask and producing a second solution, heating the second solution, maintaining the temperature >200 C in the flask, and resulting in PbSe nanowires.