INTRABAND TRANSITION-BASED INFRARED DEVICE OF NONSTOICHIOMETRIC QUANTUM DOTS

    公开(公告)号:US20190119565A1

    公开(公告)日:2019-04-25

    申请号:US16090483

    申请日:2017-03-31

    IPC分类号: C09K11/02 C09K11/89

    摘要: The present discloser relates to an infrared device using intra-band electron transition of non-stoichiometric quantum dots and, more specifically, to non-stoichiometric quantum dot nanoparticles and an infrared device comprising the nanoparticles, in which the nanoparticles comprise quantum dot cores and nonthiol ligands bonded to the core and emits infrared rays from electron transition between discrete energy levels in the band. The infrared device has an effect of emitting infrared rays, particularly, mid-infrared rays or far-infrared rays, by using the electron transition between discrete energy levels in the band of quantum dots in which the proportion of a metal is higher than that of a chalcogen. In addition, the quantum dots are prepared by containing nonthiol ligands, and thus, compared with a conventional thiol ligand, ligand substitution is very easy while the n-type doping of quantum dots is maintained.

    LIGHT SENSITIVE DEVICE
    9.
    发明申请

    公开(公告)号:US20220278142A1

    公开(公告)日:2022-09-01

    申请号:US17632277

    申请日:2020-07-31

    申请人: NEXDOT

    摘要: A light sensitive device including a substrate and high pass filter semiconductor nanoparticles distributed on the substrate. The substrate includes at least one photosensor, and the semiconductor nanoparticles are high pass filters in UV-visible-NIR light range. The light sensitive device has a density of the semiconductor nanoparticles per surface unit of greater than 5×109 nanoparticles.cm−2. Also, a process for the manufacture of the light sensitive device, and an image sensor that includes the light sensitive device.