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    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME
    1.
    发明申请
    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME 有权
    具有高照度效能的水分散纳米颗粒及其生产方法

    公开(公告)号：US20090315446A1

    公开(公告)日：2009-12-24

    申请号：US12427138

    申请日：2009-04-21

    Applicant: Norio MURASE ,  Chunliang LI ,  Masanori ANDO

    Inventor： Norio MURASE ,  Chunliang LI ,  Masanori ANDO

    IPC: H01J1/62 ,  C23C18/14 ,  B32B5/02 ,  C09K11/08 ,  C09K11/56 ,  C09K11/54 ,  C09K11/70

    CPC classification number: C09K11/70 ,  B82Y30/00 ,  C09K11/02 ,  C09K11/565 ,  C23C18/122 ,  C23C18/1254 ,  C23C18/14 ,  Y10S977/778 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/82 ,  Y10S977/826 ,  Y10S977/834 ,  Y10T428/268

    Abstract: The present invention provides nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles comprising bringing a dispersion of III-V semiconductor nanoparticles in an organic solvent into contact with an aqueous solution of a Group II element-containing compound and a Group VI element-containing compound to thereby transfer the III-V semiconductor nanoparticles of the organic solvent dispersion to the aqueous solution, and then irradiating the aqueous solution with light; and a method of producing a glass matrix having the nanoparticles dispersed therein.The present invention provides III-V semiconductor nanoparticles having a high photoluminescence efficiency in an aqueous solution, and a method of producing the nanoparticles. The invention further provides a fluorescent material with high PL efficiency containing the III-V semiconductor nanoparticles retained in a glass matrix, a method of producing the fluorescent material, and a light-emitting device containing the fluorescent material.

    Abstract translation: 本发明提供具有由包含III族元素和V族元素的芯组成的核/壳结构的纳米颗粒，其中III族元素与V族元素的摩尔比在1.25至3.0的范围内，壳体 包含II族元素和VI族元素，并且具有0.2nm至4nm的厚度，所述纳米颗粒的光致发光效率为10％以上，直径为2.5〜10nm; 制备水分散性纳米颗粒的方法包括使III-V族半导体纳米颗粒在有机溶剂中的分散体与含有II族元素的化合物和含VI族元素的化合物的水溶液接触，从而将III -V半导体纳米颗粒的有机溶剂分散到水溶液中，然后用光照射水溶液; 以及制备其中分散有纳米颗粒的玻璃基质的方法。 本发明提供了在水溶液中具有高光致发光效率的III-V族半导体纳米粒子，以及制造纳米粒子的方法。 本发明还提供一种含有保留在玻璃基质中的III-V族半导体纳米粒子的PL效率高的荧光材料，荧光材料的制造方法以及含有荧光体的发光元件。

    Process For the Production of Inp Fine Particles and Inp Fine Particle Dispersion Obtained by the Process
    2.
    发明申请
    Process For the Production of Inp Fine Particles and Inp Fine Particle Dispersion Obtained by the Process 失效
    用于生产由该方法获得的Inp微粒和Inp微粒分散的方法

    公开(公告)号：US20080199381A1

    公开(公告)日：2008-08-21

    申请号：US11666227

    申请日：2006-03-10

    Applicant: Shuzo Tokumitsu

    Inventor： Shuzo Tokumitsu

    IPC: C01B25/00

    CPC classification number: C09K11/70 ,  C01B25/087 ,  Y10S977/813 ,  Y10S977/815 ,  Y10S977/816 ,  Y10S977/818 ,  Y10S977/819 ,  Y10S977/82 ,  Y10S977/823 ,  Y10S977/824 ,  Y10S977/896

    Abstract: The invention is to provide a process for industrially advantageously producing InP fine particles having a nano-meter size efficiently in a short period of time and an InP fine particle dispersion, and there are provided a process for the production of InP fine particles by reacting an In raw material containing two or more In compounds with a P raw material containing at least one P compound in a solvent wherein the process uses, as said two or more In compounds, at least one first In compound having a group that reacts with a functional group of P compound having a P atom adjacent to an In atom to be eliminated with the functional group in the formation of an In—P bond and at least one second In compound having a lower electron density of In atom in the compound than said first In compound and Lewis base solvent as said solvent, and InP fine particles obtained by the process.

    Abstract translation: 本发明提供了一种工业上有利地在短时间内有效地生产具有纳米尺寸的InP微粒和InP微粒分散体的方法，并且提供了一种通过使 在含有两种或更多种In化合物的原料中含有至少一种P化合物的In化合物在该方法中使用的溶剂中，作为所述两种或更多种In化合物，具有至少一种具有与官能团反应的基团的第一In化合物 具有与形成In-P键时被官能团除去的In原子相邻的P原子的P化合物组以及化合物中比所述第一化合物具有较低电子密度的In原子的至少一种In化合物 在化合物和路易斯碱溶剂中作为所述溶剂，并通过该方法获得的InP微粒。

    Conversion of type of quantum well structure
    6.
    发明授权
    Conversion of type of quantum well structure 有权
    量子阱结构类型的转换

    公开(公告)号：US07286573B1

    公开(公告)日：2007-10-23

    申请号：US10923160

    申请日：2004-08-12

    Applicant: Cun-Zheng Ning

    Inventor： Cun-Zheng Ning

    IPC: H01S3/30 ,  H01S5/00 ,  H01L29/06 ,  H01L29/372

    CPC classification number: H01S5/34 ,  B82Y20/00 ,  H01L31/035236 ,  H01S5/309 ,  H01S5/3407 ,  H01S5/34306 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/82

    Abstract: A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

    Abstract translation: 将2型量子阱半导体材料转换为1型材料的方法。 第二层未掺杂材料被放置在选择性掺杂材料的第一和第三层之间，其通过具有小宽度的未掺杂层与第二层分离。 选择掺杂分布，使得跨越第一层 - 第二层界面的第一电势增量等于第一选择值和/或跨越第二层 - 第三层界面的第二电势增量等于第二选定值。 由此制造的半导体结构可用作激光材料，并且作为诸如中红外区域的各种波长区域中的入射光检测器材料是有用的。

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