One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection
    5.
    发明授权
    One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection 失效
    高效优质金属硫族化物纳米晶体的一锅合成无前体注射

    公开(公告)号:US07465352B2

    公开(公告)日:2008-12-16

    申请号:US11188352

    申请日:2005-07-25

    Abstract: A method of homogeneously forming metal chalcogenide nanocrystals includes the steps combining a metal source, a chalcogenide source, and at least one solvent at a first temperature to form a liquid comprising assembly, and heating the assembly at a sufficient temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals. The plurality of metal chalcogenide nanocrystals are then grown without injection of either the metal source or the chalcogenide source at a temperature at least equal to the sufficient temperature, wherein growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. An optional nucleation initiator can help control the final size of the monodisperse crystals. Such synthesis, without the need for precursor injection, is suitable for the industrial preparation of high-quality nanocrystals.

    Abstract translation: 均匀形成金属硫族化物纳米晶体的方法包括在第一温度下组合金属源,硫属化物源和至少一种溶剂以形成包含组合的液体的步骤,并在足够的温度下加热该组件以引发成核以形成 多种金属硫族化物纳米晶体。 然后在至少等于足够温度的温度下,不注入金属源或硫族化物源,生长多个金属硫族化物纳米晶体,其中生长基本上进行而没有成核,形成多个单分散金属硫族化物纳米晶体。 任选的成核引发剂可以帮助控制单分散晶体的最终尺寸。 这种合成,不需要前体注入,适用于高品质纳米晶体的工业制备。

    METHOD OF PREPARING SEMICONDUCTOR NANOCRYSTAL COMPOSITIONS
    6.
    发明申请
    METHOD OF PREPARING SEMICONDUCTOR NANOCRYSTAL COMPOSITIONS 有权
    制备半导体纳米复合材料的方法

    公开(公告)号:US20070289491A1

    公开(公告)日:2007-12-20

    申请号:US11680047

    申请日:2007-02-28

    Abstract: A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.

    Abstract translation: 包含V-VI族半导体材料的半导体纳米晶体组合物及其制备方法。 该方法包括合成半导体纳米晶核,其中合成包括将V族VI族阴离子气体溶解在第一种溶剂中以产生V族至VI族阴离子前体,制备阳离子前体,并将V族与VI阴离子前体反应, 阳离子前体在第二溶剂存在下进行。 反应可以在高压容器中进行。

    Removal of mercury heavy metal values employing sulfur trioxide
    8.
    发明授权
    Removal of mercury heavy metal values employing sulfur trioxide 失效
    去除使用三氧化硫的汞重金属值

    公开(公告)号:US5478540A

    公开(公告)日:1995-12-26

    申请号:US231327

    申请日:1994-04-22

    CPC classification number: C22B43/00 B09B3/0016 B09C1/02 B09C1/08 C01G13/00

    Abstract: Heavy metal values can be removed and separated from a substance having a suitable amount of the heavy metal values by contacting the substance with a fluid containing sulfur trioxide to prepare a corresponding heavy metal sulfate, which is followed by leaching the sulfate therefrom and separating the leached sulfate. For example, mercury metal, oxide or sulfide, or methyl mercury, such as can be found in used fluorescent lamps and household batteries, in industrial flue sands, fly ash, contaminated soils, etc., can be removed by contact of crushed lamps or batteries, samples of the flue sands, fly ash, or contaminated soils, etc., with a mixture of sulfur trioxide in air to form mercuric sulfate, which is leached with a suitable leaching agent such as water, aqueous hydrochloric acid, hot dilute sulfuric acid, or concentrated sodium chloride solution, and sequestered by use of an ion exchange resin or precipitated as sulfides for further isolation of mercury value.

    Abstract translation: 通过使物质与含有三氧化硫的流体接触以制备相应的重金属硫酸盐,然后从其中浸出硫酸盐并分离浸出的重金属元素,可以将重金属值从具有合适量的重金属值的物质中除去并分离 硫酸盐。 例如,在工业烟道沙子,飞灰,污染土壤等中的用过的荧光灯和家用电池中可以发现汞金属,氧化物或硫化物或甲基汞,可以通过粉碎的灯或 电池,烟道样品,飞灰或污染土壤等,与三氧化硫在空气中的混合物形成硫酸汞,用合适的浸出剂如水,盐酸水溶液,热稀硫酸 酸或浓缩的氯化钠溶液,并通过使用离子交换树脂螯合或作为硫化物沉淀以进一步分离汞值。

    Sulfide treatment to inhibit mercury adsorption onto activated carbon in
carbon-in-pulp gold recovery circuits
    9.
    发明授权
    Sulfide treatment to inhibit mercury adsorption onto activated carbon in carbon-in-pulp gold recovery circuits 失效
    硫化物处理以抑制汞吸附在碳 - 纸浆黄金回收回路中的活性炭上

    公开(公告)号:US4734270A

    公开(公告)日:1988-03-29

    申请号:US850677

    申请日:1986-04-11

    CPC classification number: C01G13/00 C22B3/24 C22B43/00 Y02P10/234

    Abstract: In this invention sulfide compounds are added to mercury and precious metal-containing carbonaceous ore slurries prior to the slurry being processed by a carbon-in-pulp system. The sulfide compound inhibits the mercury from being adsorbed onto the activated carbon by reacting with the mercury to form mercuric sulfide and by inhibiting the dissolution of mercury from the ore. The mercuric sulfide precipitate displays no activity toward the activated carbon. The sulfiding procedure is performed with a sufficient amount of sulfide-providing compound to provide at least about 30 times the stoichiometric amount of sulfide ions required to react with the mercury in the ore slurry.

    Abstract translation: 在本发明中,在浆料被纸浆系统加工之前,将硫化物加入汞和含贵金属的含碳矿石浆料中。 硫化物化合物通过与汞反应而抑制汞被吸附在活性炭上,形成硫化汞并通过抑制矿石中汞的溶解。 硫化汞沉淀物对活性炭没有显示出活性。 硫化过程用足够量的提供硫化物的化合物进行,以提供与矿石浆料中的汞反应所需的化学计量量的化学计量量的至少约30倍。

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