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    LAYERED OXIDE MATERIALS FOR BATTERIES
    3.
    发明申请
    LAYERED OXIDE MATERIALS FOR BATTERIES 有权
    电池用层状氧化物

    公开(公告)号：US20160181608A1

    公开(公告)日：2016-06-23

    申请号：US14580309

    申请日：2014-12-23

    Applicant: Sharp Kabushiki Kaisha ,  Faradion Limited, Electric Works

    Inventor： Emma KENDRICK ,  Robert GRUAR

    IPC: H01M4/525 ,  C01D1/02 ,  H01M4/505

    CPC classification number: H01M4/525 ,  C01D1/02 ,  C01G17/00 ,  C01G17/006 ,  C01G45/1228 ,  C01G49/0027 ,  C01G51/42 ,  C01G53/42 ,  C01G53/50 ,  C01G53/66 ,  C01P2002/20 ,  C01P2002/72 ,  C01P2002/88 ,  C01P2006/40 ,  H01M4/505 ,  H01M10/054

    Abstract: Materials are presented of the formula: Ax My Mizi O2-d, where A is sodium or a mixed alkali metal including sodium as a major constituent; x>0; M is a metal or germanium; y>0; Mi, for i=1, 2, 3 . . . n, is a transition metal or an alkali metal; zi≧0 for each i=1, 2, 3 . . . n; 0 2-d. The formula includes compounds that are oxygen deficient. Further the oxidation states may or may not be integers i.e. they may be whole numbers or fractions or a combination of whole numbers and fractions and may be averaged over different crystallographic sites in the material. Such materials are useful, for example, as electrode materials in rechargeable battery applications. Also presented is a method of preparing a compound having the formula Ax My Mizi O2-d.

    Abstract translation: 材料呈下列公式：Ax My Mizi O2-d，其中A为钠或混合碱金属，包括以钠为主要成分; x> 0; M是金属或锗; y> 0; Mi，i = 1,2,3。 。 。 n是过渡金属或碱金属; 对于每个i = 1,2,3，zi≥0。 。 。 n; 0 2-d。 该配方包括缺氧的化合物。 此外，氧化态可以是或可以不是整数，即它们可以是整数或分数，或者整数和分数的组合，并且可以在材料中的不同结晶位点上进行平均。 这样的材料可用作例如可充电电池应用中的电极材料。 还提出了一种制备具有式My My Mizi O 2-d的化合物的方法。

    Single walled metal oxide nanotubes
    5.
    发明授权
    Single walled metal oxide nanotubes 有权
    单壁金属氧化物纳米管

    公开(公告)号：US08637693B2

    公开(公告)日：2014-01-28

    申请号：US13049375

    申请日：2011-03-16

    Applicant: Dun-Yen Kang ,  Sankar Nair ,  Christopher Jones

    Inventor： Dun-Yen Kang ,  Sankar Nair ,  Christopher Jones

    IPC: C07F19/00 ,  C07F7/02 ,  C07F5/06

    CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B33/26 ,  C01G1/02 ,  C01G17/00 ,  C01G53/006 ,  C01P2002/72 ,  C01P2002/82 ,  C01P2002/86 ,  C01P2002/88 ,  C01P2004/04 ,  C01P2004/13

    Abstract: Provided herein are methods for dehydrating single-walled metal oxide nanotubes by heating the SWNT under vacuum at 250-300° C.; methods of dehydroxylating SWNT, comprising heating the SWNT under vacuum at 300-340° C., and methods for maximizing the pore volume of a SWNT, comprising heating the SWNT at 300° C. under vacuum to partially dehydroxylate and dehydrate the SWNT; methods of modifying the inner surface of a single walled aluminosilicate nanotube (SWNT), comprising dehydration or dehydration and dehydroxylation, followed by reacting the SWNT with a derivative under anhydrous conditions to produce a SWNT that is derivatized on its inner surface. The invention also includes single-walled nanotubes produced by the methods of the invention.

    Abstract translation: 本文提供了通过在250-300℃真空下加热SWNT来使单壁金属氧化物纳米管脱水的方法。 脱水氧化SWNT的方法，包括在300-340℃下真空加热SWNT，以及使SWNT的孔体积最大化的方法，包括在真空下在300℃下加热SWNT以使SWNT部分脱羟基化和脱水; 改变单壁铝硅酸盐纳米管（SWNT）的内表面的方法，包括脱水或脱水和脱羟基化，然后在无水条件下使SWNT与衍生物反应以产生在其内表面衍生的SWNT。 本发明还包括通过本发明的方法制备的单壁纳米管。

    METHOD FOR PRODUCING HALOGENATED POLYSILANES
    8.
    发明申请
    METHOD FOR PRODUCING HALOGENATED POLYSILANES 有权
    生产氢化多晶硅的方法

    公开(公告)号：US20120319041A1

    公开(公告)日：2012-12-20

    申请号：US13512999

    申请日：2010-12-06

    Applicant: Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Andrey Lubentsov

    Inventor： Christian Bauch ,  Sven Holl ,  Rumen Deltschew ,  Javad Mohsseni ,  Andrey Lubentsov

    IPC: C01B33/107 ,  C09K3/00

    CPC classification number: C08G77/60 ,  C01B33/04 ,  C01G17/00 ,  C08G79/14 ,  Y02P20/582

    Abstract: A process for preparing a halogenated polysilane HpSin−pX(2n+2)−p with n=1 to 50; 0≦p≦2n+1, and X=F, Cl, Br, I, as an individual compound or a mixture of compounds, from a mixture which includes the halogenated polysilane or in which the halogenated polysilane is formed, additionally includes boron-containing impurities, wherein a) the mixture is admixed with at least 1 ppbw (parts per billion per weight) of a siloxane-forming oxidizing agent or siloxane, the boron-containing impurities forming compounds having a volatility and/or solubility different from the halogenated polysilanes, b) the halogenated polysilane is separated from the compound(s), and c) not more than 1 ppmw of water and not less than 1 ppb of siloxanes are present.

    Abstract translation: 制备n = 1〜50的卤代聚硅烷HpSin-pX（2n + 2）-p的方法; 0＆lt; nlE; p＆nlE; 2n + 1和X = F，Cl，Br，I，作为单独的化合物或化合物的混合物，包括卤代聚硅烷或其中形成卤代聚硅烷的混合物另外包括硼 - 含有杂质，其中a）将混合物与至少1ppbw（重量/重量/重量）的硅氧烷形成氧化剂或硅氧烷混合，所形成的含硼杂质具有挥发性和/或溶解度不同于卤代 聚硅烷，b）卤化聚硅烷与化合物分离，c）不超过1ppmw的水和不少于1ppb的硅氧烷。

    MECHANICAL STRENGTH & THERMOELECTRIC PERFORMANCE IN METAL CHALCOGENIDE MQ (M=Ge,Sn,Pb and Q=S, Se, Te) BASED COMPOSITIONS
    10.
    发明申请
    MECHANICAL STRENGTH & THERMOELECTRIC PERFORMANCE IN METAL CHALCOGENIDE MQ (M=Ge,Sn,Pb and Q=S, Se, Te) BASED COMPOSITIONS 有权
    金属氯化铝MQ（M = Ge，Sn，Pb和Q = S，Se，Te）的机械强度和热电性能基于组成

    公开(公告)号：US20100025616A1

    公开(公告)日：2010-02-04

    申请号：US12487893

    申请日：2009-06-19

    Applicant: Mercouri G. Kanatzidis ,  Joseph R. Sootsman

    Inventor： Mercouri G. Kanatzidis ,  Joseph R. Sootsman

    IPC: H01L29/12

    CPC classification number: C01G17/00 ,  C01B19/007 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/88 ,  C01P2004/03 ,  C01P2006/32 ,  C01P2006/40 ,  H01L35/16 ,  Y02P20/129

    Abstract: Thermoelectric eutectic and off-eutectic compositions comprising a minor phase in a thermoelectric matrix phase are provided. These compositions include eutectic and near eutectic compositions where the matrix phase is a chalcogenide (S, Se, Te) of Ge, Sn, or Pb or an appropriate alloy of these compounds and at least one of Ge, Ge1-xSix, Si, ZnTe, and Co are precipitated as the minor phase within the matrix. Methods of making and using the compositions are also provided. The thermoelectric and mechanical properties of the compositions make them well-suited for use in thermoelectric applications. Controlled doping of eutectic compositions and hypereutectic compositions can yield large power factors. By optimizing both the thermal conductivities and power factors of the present compositions, ZT values greater than 1 can be obtained at 700K.

    Abstract translation: 提供了包含热电矩阵相中的次相的热电共晶和非共晶组合物。 这些组合物包括共晶和近共晶组合物，其中基质相是Ge，Sn或Pb的硫族化物（S，Se，Te）或这些化合物和Ge，Ge1-xSix，Si，ZnTe中的至少一种的合适的合金 ，而Co作为基体内的次相析出。 还提供了制备和使用组合物的方法。 组合物的热电性能和机械性能使其非常适用于热电应用。 共晶组合物和过共晶组合物的受控掺杂可产生较大的功率因数。 通过优化本发明组合物的热导率和功率因数，可以在700K下获得大于1的ZT值。

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