Abstract:
A piezoceramic composition comprises, as the main phase, a crystalline phase of a perovskite structure signified as formula ABO3, with Element A consisting of one or more elements selected from among K (potassium), Na (sodium) and Li (lithium) and with Element B consisting of one or more elements selected from among Nb (niobium), Ta (tantalum) and Sb (antimony), with Elements A and B comprising other elements as additives. An X-ray diffraction profile of crushed particles of the piezoceramic composition that are 10 μm or less in diameter has a diffraction peak indicating the presence of the main (single) phase as well as a heterogeneous phase of a crystalline structure signified as formula AsBtOu (s
Abstract translation:压电陶瓷组合物包含作为主相的钙钛矿结构的结晶相,表示为式ABO 3,元素A由选自K(钾),Na(钠)和Li(锂)中的一种或多种元素组成,并且与 元素B由选自Nb(铌),Ta(钽)和Sb(锑)中的一种或多种元素组成,元素A和B包含其它元素作为添加剂。 直径为10μm以下的压电陶瓷组合物的粉碎颗粒的X射线衍射图具有表示存在主(单)相的衍射峰以及表示为式AsBtOu的结晶结构的非均相( s
Abstract:
An indicator for detecting peroxide can detect the peroxide through change of hue thereof by reacting the peroxide according to a predefined concentration and a predefined sterilization treatment condition thereof. The indicator has better resistance against weather or light and preservation stability than those of prior indicators including inorganic compounds or organic compounds as discoloration components, can clearly change an arbitrary hue thereof under suitable discoloration rate, and has visible distinguishability. The indicator for detecting peroxide includes powdery metal sulfide, that undergoes discoloration by reacting with the peroxide. In particular a discoloration layer including the metal sulfide is applied onto at least a portion of a base substrate.
Abstract:
A method and apparatus of producing inorganic semiconducting nanoparticles having a stable surface includes providing an inorganic bulk semiconductor material milled in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of the semiconductor material, or prevent the formation of such oxides to provide semiconducting nanoparticles having a stable surface, allowing electrical contact between the nanoparticles. The milling media and/or one or more components of the mill include the selected reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminum, or an alloy containing one or more of these metals. Alternatively, the selected reducing agent includes a liquid contained in the mill during milling, which is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof.
Abstract:
A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent. For example, the milling can be carried out in a high energy mill with a hammer action in which a pestle of the mill, a mortar of the mill, or both are composed of the selected reducing agent, or a low energy, stirred media mill, such as a ball mill, a rod mill or similar, in which the milling media, a lining of the mill, or both are composed of the reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminium, or an alloy containing one or more of said metals. In another embodiment of the method, the selected reducing agent comprises a liquid contained in the mill during milling of the bulk semiconductor material. The liquid is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof. The invention extends to a mill for carrying out the method.
Abstract:
A composite lithium compound having a mixed crystalline structure is provided. Such compound can be formed by heating lithium, iron, phosphorous and carbon sources with a lithium metal compound. The resulting mixed metal crystal can exhibit superior electrical property and is a better cathode material for lithium secondary batteries.
Abstract:
The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment.
Abstract:
To provide a process for producing a stable modified sol to be used for a component of a hard coat agent to be applied to the surface of plastic lenses or for other applications. It is a sol containing modified metal oxide particles which have a particle size of from 4.5 to 60 nm and which comprise, as nuclei, colloidal particles (A) having a particle size of from 4 to 50 nm and comprising stannic oxide particles or composite particles of stannic oxide particles and zirconium oxide particles in a weight ratio of ZrO2:SnO2 being from 0:1 to 0.50:1, and, as applied on their surface, an alkylamine-containing Sb2O5 colloidal particles (B1), or composite colloidal particles (B2) of diantimony pentoxide and silicon dioxide, or tungsten oxide/stannic oxide/silicon dioxide composite colloid (B3), wherein the weight ratio of (B)/(A) is from 0.01 to 0.50 on the basis of the weight ratio of their metal oxides.
Abstract:
Physical characteristics of ATO fine particles capable of exhibiting such optical properties as a high visible light transmittance, a low solar radiation transmittance, and a low haze value when the ATO fine particles are formed on a transparent substrate or in the substrate are clarified, and the ATO fine particles having the physical characteristics thereof are manufactured. The ATO fine particles having such physical characteristics that a size of a crystallite constituting the ATO fine particles is 4 to 125 nm, and that a specific surface area of the fine particles of 5 to 110 m2/g can exhibit the above-described optical properties, and an example of a method for manufacturing thereof is to parallel-drop an antimony chloride alcoholic solution and an ammonium hydrogen carbonate aqueous solution in a tin chloride aqueous solution, thoroughly wash generated precipitates, dry and calcinate them in an atmosphere, thereby the ATO fine particles are manufactured.
Abstract:
Compositions include nanometer-sized particles having a mixed oxide of titanium and antimony are characterized by rutile-like crystal phases.
Abstract:
The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment.