PEROXIDE INDICATOR
    2.
    发明申请
    PEROXIDE INDICATOR 有权
    过氧化物指示剂

    公开(公告)号:US20150050745A1

    公开(公告)日:2015-02-19

    申请号:US14380853

    申请日:2013-02-27

    Abstract: An indicator for detecting peroxide can detect the peroxide through change of hue thereof by reacting the peroxide according to a predefined concentration and a predefined sterilization treatment condition thereof. The indicator has better resistance against weather or light and preservation stability than those of prior indicators including inorganic compounds or organic compounds as discoloration components, can clearly change an arbitrary hue thereof under suitable discoloration rate, and has visible distinguishability. The indicator for detecting peroxide includes powdery metal sulfide, that undergoes discoloration by reacting with the peroxide. In particular a discoloration layer including the metal sulfide is applied onto at least a portion of a base substrate.

    Abstract translation: 用于检测过氧化物的指示剂可以通过根据预定浓度的过氧化物和其预定的灭菌处理条件使过氧化氢的变化来检测过氧化物。 该指示剂比以前的指标(包括无机化合物或有机化合物作为变色成分)具有更好的抗天气或光照和保存稳定性,可以在合适的变色速率下显着地改变其任意的色调,并且具有可见的可区分性。 用于检测过氧化物的指示剂包括粉末状金属硫化物,其通过与过氧化物反应而发生变色。 特别地,将包含金属硫化物的变色层施加到基底基材的至少一部分上。

    Method of producing stable oxygen terminated semiconducting nanoparticles
    3.
    发明授权
    Method of producing stable oxygen terminated semiconducting nanoparticles 有权
    稳定的氧端基半导体纳米粒子的制备方法

    公开(公告)号:US08434704B2

    公开(公告)日:2013-05-07

    申请号:US12991879

    申请日:2009-04-09

    Abstract: A method and apparatus of producing inorganic semiconducting nanoparticles having a stable surface includes providing an inorganic bulk semiconductor material milled in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of the semiconductor material, or prevent the formation of such oxides to provide semiconducting nanoparticles having a stable surface, allowing electrical contact between the nanoparticles. The milling media and/or one or more components of the mill include the selected reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminum, or an alloy containing one or more of these metals. Alternatively, the selected reducing agent includes a liquid contained in the mill during milling, which is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof.

    Abstract translation: 制备具有稳定表面的无机半导体纳米颗粒的方法和装置包括提供在选择的还原剂存在下研磨的无机体半导体材料。 还原剂用于化学还原半导体材料的氧化物,或阻止形成这种氧化物以提供具有稳定表面的半导体纳米颗粒,从而允许纳米颗粒之间的电接触。 研磨介质和/或研磨机的一个或多个组分包括所选择的还原剂。 研磨介质或研磨机通常由选自铁,铬,钴,镍,锡,钛,钨,钒和铝的金属或包含这些金属中的一种或多种的合金组成。 或者,选择的还原剂包括在研磨期间包含在研磨机中的液体,其通常是含有盐酸,硫酸,硝酸,乙酸,甲酸或碳酸中的任一种的酸性溶液或其混合物。

    Method of Producing Stable Oxygen Terminated Semiconducting Nanoparticles
    4.
    发明申请
    Method of Producing Stable Oxygen Terminated Semiconducting Nanoparticles 有权
    生产稳定的氧终止半导体纳米颗粒的方法

    公开(公告)号:US20120018551A1

    公开(公告)日:2012-01-26

    申请号:US12991879

    申请日:2009-04-09

    Abstract: A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent. For example, the milling can be carried out in a high energy mill with a hammer action in which a pestle of the mill, a mortar of the mill, or both are composed of the selected reducing agent, or a low energy, stirred media mill, such as a ball mill, a rod mill or similar, in which the milling media, a lining of the mill, or both are composed of the reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminium, or an alloy containing one or more of said metals. In another embodiment of the method, the selected reducing agent comprises a liquid contained in the mill during milling of the bulk semiconductor material. The liquid is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof. The invention extends to a mill for carrying out the method.

    Abstract translation: 提供了制备具有稳定表面的无机半导体纳米颗粒的方法。 该方法包括提供诸如硅或锗之类的无机体半导体材料,以及在选择的还原剂存在下研磨体半导体材料。 还原剂用于化学还原半导体材料的一种或多种组分元素的氧化物,或通过优先氧化来防止形成这种氧化物,从而提供具有允许纳米颗粒之间电接触的稳定表面的半导体纳米颗粒。 研磨可以在其中研磨介质和/或研磨机的一个或多个组分包含所选择的还原剂的研磨机中进行。 例如,铣削可以在具有锤击作用的高能磨机中进行,其中研磨机的研杵,研磨机的砂浆或两者均由选择的还原剂或低能量的搅拌介质研磨机 ,例如球磨机,棒磨机或类似物,其中研磨介质,研磨机的衬里或两者都由还原剂组成。 研磨介质或研磨机通常由选自铁,铬,钴,镍,锡,钛,钨,钒和铝的金属或含有一种或多种所述金属的合金组成。 在该方法的另一个实施方案中,所选择的还原剂包括在研磨体内半导体材料期间包含在研磨机中的液体。 液体通常是含有盐酸,硫酸,硝酸,乙酸,甲酸或碳酸中的任何一种或其混合物的酸性溶液。 本发明延伸到用于实施该方法的轧机。

    Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film
    6.
    发明授权
    Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film 失效
    用于形成透明导电膜的组合物,用于形成透明导电膜的溶液和形成透明导电膜的方法

    公开(公告)号:US07147805B2

    公开(公告)日:2006-12-12

    申请号:US10602906

    申请日:2003-06-24

    Inventor: Takashi Miyoshi

    Abstract: The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment.

    Abstract translation: 本发明的组合物是用于形成透明导电膜的组合物,该组合物包含水溶性铟化合物,含卤素的水溶性有机锡化合物和水溶性有机高分子化合物。 根据本发明的用于形成透明导电膜的方法包括以下步骤:i)向基底施加用于形成含水组合物的透明导电膜或包含水和有机溶剂的溶剂的溶液,和ii) 涂膜。 该方法还可以包括:iii)将在烧成步骤ii)中获得的膜进行还原热处理的步骤。

    Process for producing modified stannic oxide sol and stannic oxide/zirconium oxide composite sol
    7.
    发明申请
    Process for producing modified stannic oxide sol and stannic oxide/zirconium oxide composite sol 审中-公开
    改性锡氧化物溶胶和氧化锡/氧化锆复合溶胶的制备方法

    公开(公告)号:US20060116429A1

    公开(公告)日:2006-06-01

    申请号:US11266344

    申请日:2005-11-04

    Abstract: To provide a process for producing a stable modified sol to be used for a component of a hard coat agent to be applied to the surface of plastic lenses or for other applications. It is a sol containing modified metal oxide particles which have a particle size of from 4.5 to 60 nm and which comprise, as nuclei, colloidal particles (A) having a particle size of from 4 to 50 nm and comprising stannic oxide particles or composite particles of stannic oxide particles and zirconium oxide particles in a weight ratio of ZrO2:SnO2 being from 0:1 to 0.50:1, and, as applied on their surface, an alkylamine-containing Sb2O5 colloidal particles (B1), or composite colloidal particles (B2) of diantimony pentoxide and silicon dioxide, or tungsten oxide/stannic oxide/silicon dioxide composite colloid (B3), wherein the weight ratio of (B)/(A) is from 0.01 to 0.50 on the basis of the weight ratio of their metal oxides.

    Abstract translation: 提供一种用于生产用于应用于塑料透镜表面或其它应用的硬涂层剂的组分的稳定的改性溶胶的方法。 它是含有粒度为4.5至60nm的改性金属氧化物颗粒的溶胶,其包含粒径为4至50nm的胶体颗粒(A)作为核,其包含氧化锡颗粒或复合颗粒 的氧化锡颗粒和氧化锆颗粒,其重量比为ZrO 2:SnO 2 2,为0:1至0.50:1,并且当施加在其表面上时, 含有烷基胺的Sb 2 O 5胶体粒子(B1)或五氧化二钽和二氧化硅的复合胶体粒子(B2),氧化钨/氧化锡/硅 二氧化硅复合胶体(B3),其中(B)/(A)的重量比为0.01〜0.50,基于其金属氧化物的重量比。

    Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film
    10.
    发明申请
    Composition for forming a transparent conducting film, solution for forming a transparent conducting film and method of forming a transparent conducting film 失效
    用于形成透明导电膜的组合物,用于形成透明导电膜的溶液和形成透明导电膜的方法

    公开(公告)号:US20040211941A1

    公开(公告)日:2004-10-28

    申请号:US10602906

    申请日:2003-06-24

    Inventor: Takashi Miyoshi

    Abstract: The composition of the present invention is one for forming a transparent conducting film, the composition comprising a water-soluble indium compound, a halogen-containing water-soluble organotin compound and a water-soluble organic high molecular compound. A method for forming a transparent conducting film according to the invention comprises the steps of i) applying to a substrate a solution for forming a transparent conducting film containing the composition in water or a solvent comprising water and an organic solvent, and ii) firing the coating film. This method may further include iii) the step of subjecting the film obtained in the firing step ii) to a reducing heat treatment.

    Abstract translation: 本发明的组合物是用于形成透明导电膜的组合物,该组合物包含水溶性铟化合物,含卤素的水溶性有机锡化合物和水溶性有机高分子化合物。 根据本发明的用于形成透明导电膜的方法包括以下步骤:i)向基底施加用于形成含水组合物的透明导电膜或包含水和有机溶剂的溶剂的溶液,和ii) 涂膜。 该方法还可以包括:iii)将在烧成步骤ii)中获得的膜进行还原热处理的步骤。

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