Metal chalcogenide composite nano-particles and layers therewith
    4.
    发明授权
    Metal chalcogenide composite nano-particles and layers therewith 失效
    金属硫属元素复合纳米颗粒及其层

    公开(公告)号:US07468146B2

    公开(公告)日:2008-12-23

    申请号:US10659926

    申请日:2003-09-11

    Abstract: A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.

    Abstract translation: 一种含能够形成p型半导体硫族化物纳米颗粒的金属和能够形成n型半导体硫族化物纳米颗粒的金属的金属硫族化物复合纳米颗粒,其中至少一种金属硫属元素化合物具有在 1.0和2.9eV,能够形成p型半导体硫族化物纳米颗粒的金属的浓度至少为金属的5原子%,小于金属的50原子%; 其分散体; 包含纳米颗粒的层; 以及包括该层的光伏器件。

    NEAR FIELD OPTICAL MICROSCOPE
    5.
    发明申请
    NEAR FIELD OPTICAL MICROSCOPE 有权
    近场光学显微镜

    公开(公告)号:US20120005793A1

    公开(公告)日:2012-01-05

    申请号:US13259484

    申请日:2010-03-12

    Applicant: Nenad Ocelic

    Inventor: Nenad Ocelic

    CPC classification number: G01Q60/22 B82Y20/00 B82Y35/00 Y10S977/826

    Abstract: The invention relates to a device for conducting near-field optical measurements of a specimen, a method for conducting near-field optical measurements and the use of the device.

    Abstract translation: 本发明涉及一种用于进行样本的近场光学测量的装置,用于进行近场光学测量的方法以及该装置的使用。

    Metal chalcogenide composite nano-particles and layers therewith
    6.
    发明申请
    Metal chalcogenide composite nano-particles and layers therewith 失效
    金属硫属元素复合纳米颗粒及其层

    公开(公告)号:US20040103936A1

    公开(公告)日:2004-06-03

    申请号:US10659926

    申请日:2003-09-11

    Applicant: AGFA-GEVAERT

    Abstract: A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.

    Abstract translation: 一种含能够形成p型半导体硫族化物纳米颗粒的金属和能够形成n型半导体硫族化物纳米颗粒的金属的金属硫族化物复合纳米颗粒,其中至少一种金属硫属元素化合物具有在 1.0和2.9eV,能够形成p型半导体硫族化物纳米颗粒的金属的浓度至少为金属的5原子%,小于金属的50原子%; 其分散体; 包含纳米颗粒的层; 以及包括该层的光伏器件。

    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME
    8.
    发明申请
    WATER-DISPERSIBLE NANOPARTICLES HAVING HIGH LUMINOUS EFFICIENCY AND METHOD OF PRODUCING THE SAME 有权
    具有高照度效能的水分散纳米颗粒及其生产方法

    公开(公告)号:US20090315446A1

    公开(公告)日:2009-12-24

    申请号:US12427138

    申请日:2009-04-21

    Abstract: The present invention provides nanoparticles having a core/shell structure consisting of a core comprising a Group III element and a Group V element at a molar ratio of the Group III element to the Group V element in the range of 1.25 to 3.0, and a shell comprising a Group II element and a Group VI element and having a thickness of 0.2 nm to 4 nm, the nanoparticles having a photoluminescence efficiency of 10% or more and a diameter of 2.5 to 10 nm; a method of producing the water-dispersible nanoparticles comprising bringing a dispersion of III-V semiconductor nanoparticles in an organic solvent into contact with an aqueous solution of a Group II element-containing compound and a Group VI element-containing compound to thereby transfer the III-V semiconductor nanoparticles of the organic solvent dispersion to the aqueous solution, and then irradiating the aqueous solution with light; and a method of producing a glass matrix having the nanoparticles dispersed therein.The present invention provides III-V semiconductor nanoparticles having a high photoluminescence efficiency in an aqueous solution, and a method of producing the nanoparticles. The invention further provides a fluorescent material with high PL efficiency containing the III-V semiconductor nanoparticles retained in a glass matrix, a method of producing the fluorescent material, and a light-emitting device containing the fluorescent material.

    Abstract translation: 本发明提供具有由包含III族元素和V族元素的芯组成的核/壳结构的纳米颗粒,其中III族元素与V族元素的摩尔比在1.25至3.0的范围内,壳体 包含II族元素和VI族元素,并且具有0.2nm至4nm的厚度,所述纳米颗粒的光致发光效率为10%以上,直径为2.5〜10nm; 制备水分散性纳米颗粒的方法包括使III-V族半导体纳米颗粒在有机溶剂中的分散体与含有II族元素的化合物和含VI族元素的化合物的水溶液接触,从而将III -V半导体纳米颗粒的有机溶剂分散到水溶液中,然后用光照射水溶液; 以及制备其中分散有纳米颗粒的玻璃基质的方法。 本发明提供了在水溶液中具有高光致发光效率的III-V族半导体纳米粒子,以及制造纳米粒子的方法。 本发明还提供一种含有保留在玻璃基质中的III-V族半导体纳米粒子的PL效率高的荧光材料,荧光材料的制造方法以及含有荧光体的发光元件。

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