公开(公告)号：US20180277649A1

公开(公告)日：2018-09-27

申请号：US15933072

申请日：2018-03-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU ,  Satheesh KUPPURAO

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8252 ,  H01L21/3105 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L29/6681 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/31053 ,  H01L21/31116 ,  H01L21/67167 ,  H01L21/823431 ,  H01L21/8252

Abstract: Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. The first plurality of columns are separated by a second plurality of spaces. The method also includes depositing a second dielectric layer in the second plurality of spaces to form a plurality of dummy fins, removing the first plurality of columns to form a third plurality of spaces, depositing a second plurality of columns in the third plurality of spaces, removing the one or more projections and the plurality of dummy fins to form a fourth plurality of spaces, and depositing a plurality of fins in the fourth plurality of spaces. The plurality of fins have a width between 5-10 nm.

公开(公告)号：US20180166288A1

公开(公告)日：2018-06-14

申请号：US15832571

申请日：2017-12-05

Applicant: Applied Materials, Inc.

Inventor： Hua CHUNG ,  Matthias BAUER ,  Schubert S. CHU ,  Satheesh KUPPURAO

IPC: H01L21/285 ,  H01L29/167 ,  H01L29/45

CPC classification number: H01L21/28518 ,  H01L21/02043 ,  H01L21/02532 ,  H01L21/285 ,  H01L21/32053 ,  H01L21/324 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/167 ,  H01L29/456 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7848

Abstract: The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.

公开(公告)号：US20180084610A1

公开(公告)日：2018-03-22

申请号：US15824489

申请日：2017-11-28

Applicant: Applied Materials, Inc.

Inventor： Kin Pong LO ,  Paul BRILLHART ,  Ramachandran BALASUBRAMANIAN ,  Satheesh KUPPURAO ,  Daniel REDFIELD ,  Joseph M. RANISH ,  James Francis MACK ,  Kailash Kiran PATALAY ,  Michael OLSEN ,  Eddie FEIGEL ,  Richard HALPIN ,  Brett VETORINO

IPC: H05B3/00 ,  H01L21/67

CPC classification number: H05B3/0047 ,  H01L21/67115

Abstract: Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber, a substrate support disposed within the internal volume, and a reflector positioned above and proximate to the upper dome, wherein the reflector has a heat absorptive coating layer deposited on a side of the reflector facing the substrate support.

公开(公告)号：US20180005856A1

公开(公告)日：2018-01-04

申请号：US15707810

申请日：2017-09-18

Applicant: Applied Materials, Inc.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg V. SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

公开(公告)号：US20160068955A1

公开(公告)日：2016-03-10

申请号：US14822689

申请日：2015-08-10

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Anzhong CHANG ,  Edric TONG ,  Kin Pong LO ,  David K. CARLSON ,  Errol Antonio C. SANCHEZ ,  Zhiyuan YE ,  Satheesh KUPPURAO

IPC: C23C16/455 ,  C30B25/14

CPC classification number: C23C16/45565

Abstract: Embodiments provided herein generally relate to an apparatus for gas delivering in a semiconductor process chamber. The apparatus may be a gas distribution plate that has a plurality of through holes and a plurality of blind holes formed therein. Process gases are provided into a processing volume of the semiconductor process chamber through the through holes of the gas distribution plate. The blind holes are utilized to control the temperature of the gas distribution plate using a phase change material.

Abstract translation: 本文提供的实施例通常涉及用于在半导体处理室中输送气体的装置。 该装置可以是具有形成在其中的多个通孔和多个盲孔的气体分配板。 通过气体分配板的通孔将工艺气体提供到半导体处理室的处理体积中。 盲孔用于使用相变材料控制气体分配板的温度。

公开(公告)号：US20170130359A1

公开(公告)日：2017-05-11

申请号：US15415982

申请日：2017-01-26

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Paul BRILLHART ,  Jose Antonio MARIN ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Swaminathan T. SRINIVASAN ,  Mehmet Tugrul SAMIR

IPC: C30B25/10 ,  C30B25/16 ,  C30B25/12 ,  H01L21/67 ,  C23C16/48 ,  C23C16/52 ,  G01J5/10 ,  G01J5/00 ,  C30B25/08 ,  C23C16/458

CPC classification number: C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

Abstract: A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

公开(公告)号：US20150368830A1

公开(公告)日：2015-12-24

申请号：US14737974

申请日：2015-06-12

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Kin Pong LO ,  Edric TONG ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN

IPC: C30B25/14 ,  C30B25/08

CPC classification number: C30B25/14 ,  C23C16/4412 ,  C23C16/45504 ,  C23C16/45563 ,  C30B25/08 ,  Y10T428/218

Abstract: Embodiments of the disclosure relate to a one-piece injector assembly. The injector assembly includes a plurality of channels for introducing process gas into a processing chamber while keeping the gas flow of each channel separate from the gas flow in each other channel. In addition, embodiments of the disclosure relate to upper and lower liners accommodating the one-piece injector assembly, methods for installing the injector assembly, and a processing chamber utilizing the one-piece injector assembly.

Abstract translation: 本公开的实施例涉及一体式喷射器组件。 喷射器组件包括多个通道，用于将处理气体引入处理室，同时保持每个通道的气流与每个通道中的气流隔开。 此外，本公开的实施例涉及容纳一体式喷射器组件的上部衬垫和下部衬套，用于安装喷射器组件的方法以及利用一体式喷射器组件的处理室。

公开(公告)号：US20140199056A1

公开(公告)日：2014-07-17

申请号：US14132215

申请日：2013-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Anzhong CHANG ,  Paul BRILLHART ,  Surajit KUMAR ,  Satheesh KUPPURAO ,  Mehmet Tugrul SAMIR ,  David K. CARLSON ,  Steve ABOAGYE ,  Anh N. NGUYEN ,  Kailash Kiran PATALAY ,  Joseph M. RANISH ,  Oleg SEREBRYANOV ,  Dongming IU ,  Shu-Kwan LAU ,  Zuoming ZHU ,  Herman DINIZ

IPC: H01L21/67

CPC classification number: H01L21/67115 ,  C23C16/45504

Abstract: Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes through an intersection of the central window and the upper peripheral flange is at an angle of about 8° to about 16° with respect to a planar upper surface of the peripheral flange, a lower dome comprising a lower peripheral flange and a bottom connecting the lower peripheral flange with a central opening, wherein a tangent line on an outside surface of the bottom that passes through an intersection of the bottom and the lower peripheral flange is at an angle of about 8° to about 16° with respect to a planar bottom surface of the lower peripheral flange.

Abstract translation: 本发明的实施例涉及一种圆顶组件。 圆顶组件包括上拱顶，其包括中心窗，以及在中心窗的圆周处接合中心窗的上周缘，其中中心窗的内表面上的切线穿过中心窗的交点 并且上周缘相对于周缘凸缘的平面上表面成大约8°至大约16°的​​角度，下圆顶包括下周边凸缘和将下周边凸缘连接到中心开口的底部， 其中穿过底部和下部周边凸缘的交叉点的底部外表面上的切线相对于下部周边凸缘的平坦底面成约8°至约16°的​​角度。

公开(公告)号：US20140175054A1

公开(公告)日：2014-06-26

申请号：US14195423

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： David Keith CARLSON ,  Satheesh KUPPURAO ,  Howard BECKFORD ,  Herman DINIZ ,  Kailash Kiran PATALAY ,  Brian Hayes BURROWS ,  Jeffery Ronald CAMPBELL ,  Zuoming ZHU ,  Xiaowei LI ,  Errol Antonio SANCHEZ

IPC: C23C16/455 ,  C23C16/22

CPC classification number: C23C16/455 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T137/0318

Abstract: In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Abstract translation: 在一个实施例中，气体分配组件包括注入块，其具有至少一个入口，以将前体气体从至少两个气体源输送到多个增压室，多孔板限定多个通气室中的每一个的至少一侧， 至少一个辐射能源，其定位在所述多个增压室的每一个内，以从所述至少两个气体源中的一个或两个向所述前体气体提供能量，并且使通电气体通过所述多孔板中的开口并进入腔室，并且 可变电源耦合到位于多个通风室中的每一个内的每个辐射能源。

公开(公告)号：US20160336205A1

公开(公告)日：2016-11-17

申请号：US15220974

申请日：2016-07-27

Applicant: Applied Materials, Inc.

Inventor： Paul BRILLHART ,  Joseph M. RANISH ,  Satheesh KUPPURAO ,  Balasubramanian RAMACHANDRAN ,  Zuoming ZHU

IPC: H01L21/67 ,  H05B3/00

CPC classification number: H01L21/67115 ,  C23C16/481 ,  F27B17/0025 ,  F27D5/0037 ,  H05B3/0047

Abstract: The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.

Abstract translation: 本文描述的实施例通常涉及在热处理室中具有吸收上表面的灯头组件。 在一个实施例中，处理室包括上部结构，下部结构，将上部结构连接到下部结构的基部环，设置在上部结构和下部结构之间的基板支撑，设置在基板支撑下方的下部结构， 灯头，其定位成靠近下部结构，其中形成有一个或多个固定的灯头位置，所述灯头包括靠近所述下部结构的第一表面和与所述第一表面相对的第二表面，其中所述第一表面包括吸收涂层和一个或多个灯 每个组件包括辐射发生源并且与所述一个或多个固定灯头位置相关联地定位。