公开(公告)号：US20240141498A1

公开(公告)日：2024-05-02

申请号：US18085402

申请日：2022-12-20

Applicant: Applied Materials, Inc.

Inventor： Zuoming ZHU ,  Ala MORADIAN ,  Shu-Kwan LAU ,  Manjunath SUBBANNA ,  Errol Antonio C. SANCHEZ ,  Abhishek DUBE ,  Erika R. WARRICK ,  Martin Jeffrey SALINAS ,  Chandra MOHAPATRA

IPC: C23C16/52 ,  C23C16/448 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4481 ,  C23C16/45561

Abstract: The present disclosure relates to methods of correlating zones of processing chambers, and related systems and methods. In one implementation, a method of correlating zones of a processing chamber includes partitioning the processing volume into a plurality of zones along a first direction of the processing volume and a second direction of the processing volume. The second direction intersects the first direction. The plurality of zones have a first zone number (m), and a second zone number (n). The method includes determining a group number. The determining of the group number includes multiplying a first value by a second value. The first value correlates to a first zone number (m) of a plurality of zones and the second value correlates to a second zone number (n) of the plurality of zones. The method includes grouping the zones into groups having a number that is equal to the group number.

公开(公告)号：US20220364263A1

公开(公告)日：2022-11-17

申请号：US17731414

申请日：2022-04-28

Applicant: Applied Materials, Inc.

Inventor： Shawn Joseph BONHAM ,  Xinning LUAN ,  Hui CHEN ,  James M. AMOS ,  John NEWMAN ,  Kirk Allen FISHER ,  Aimee S. ERHARDT ,  Philip Michael AMOS ,  Zhiyuan YE ,  Shu-Kwan LAU ,  Lori D. WASHINGTON

IPC: C30B25/12 ,  C23C16/458

Abstract: Systems and apparatus for a reduced mass substrate support are disclosed, according to certain embodiments. A front side pocket is provided for support of a substrate, while a backside pocket is provided that reduces the mass of the substrate support. By providing the backside pocket, the mass of the overall substrate support is reduced, providing faster thermal cycling times for the substrate support and reducing the weight of the substrate support for transport. Lift pin systems, according to disclosed embodiments, are compatible with existing pedestal systems by providing a hollow extension from each lift pin hole that extends from a bottom of the backside pocket to provide support for lift pin insertion and operation.

公开(公告)号：US20220090293A1

公开(公告)日：2022-03-24

申请号：US17027385

申请日：2020-09-21

Applicant: Applied Materials, Inc.

Inventor： Ala MORADIAN ,  Zuoming ZHU ,  Patricia M. LIU ,  Shu-Kwan LAU ,  Flora Fong-Song CHANG ,  Enle CHOO ,  Zhiyuan YE

IPC: C30B25/16 ,  C30B25/10 ,  H01L21/67

Abstract: The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

公开(公告)号：US20160362813A1

公开(公告)日：2016-12-15

申请号：US15156371

申请日：2016-05-17

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Shu-Kwan LAU ,  Errol Antonio C. SANCHEZ

IPC: C30B25/14 ,  C30B25/10 ,  H01L21/02 ,  C30B29/16 ,  C30B29/48 ,  C23C16/455 ,  C30B29/40

CPC classification number: C30B25/14 ,  C23C16/45508 ,  C23C16/45574 ,  C30B25/105 ,  C30B29/06 ,  C30B29/08 ,  C30B29/16 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/0262 ,  H01L21/02636

Abstract: A processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a substrate support having a substrate supporting surface, an energy source coupled to the top or the bottom, and a gas injector liner disposed at the sidewall. The gas injector liner comprises a first plurality of gas outlets disposed at a first height, wherein one or more of the first plurality of gas outlets are oriented upwardly or downwardly, a second plurality of gas outlets disposed at a second height shorter than the first height, wherein one or more of the second plurality of gas outlets are oriented upwardly or downwardly, and a third plurality of gas outlets disposed at a third height shorter than the second height, wherein one or more of the third plurality of gas outlets are oriented upwardly or downwardly with respect to the substrate supporting surface.

Abstract translation: 一种具有顶部，底部和侧壁的处理室，其联接在一起以限定外壳，具有基板支撑表面的基板支撑件，联接到顶部或底部的能量源以及设置在侧壁处的气体注入器衬套。 气体注入器衬套包括设置在第一高度处的第一多个气体出口，其中第一多个气体出口中的一个或多个朝上或向下取向;第二多个气体出口，其设置在比第一高度短的第二高度处 ，其中所述第二多个气体出口中的一个或多个向上或向下取向，以及设置在比所述第二高度短的第三高度处的第三多个气体出口，其中所述第三多个气体出口中的一个或多个朝向上 或相对于基板支撑表面向下。

公开(公告)号：US20160204019A1

公开(公告)日：2016-07-14

申请号：US14965228

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Masato ISHII ,  Mehmet Tugrul SAMIR ,  Shu-Kwan LAU ,  Jeffrey TOBIN

IPC: H01L21/687 ,  C30B25/12 ,  C23C16/458

CPC classification number: H01L21/68742 ,  C23C16/4582 ,  C23C16/4583 ,  C30B25/12 ,  C30B35/005 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68735 ,  H01L21/68764

Abstract: In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.

Abstract translation: 在一个实施例中，衬底支撑组件包括用于支撑衬底的基座和联接到基座的支撑传送机构，支撑传送机构具有用于支撑衬底的周缘的表面，支撑传送机构可相对于 基座的上表面。

公开(公告)号：US20160068996A1

公开(公告)日：2016-03-10

申请号：US14826287

申请日：2015-08-14

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Mehmet Tugrul SAMIR ,  Aaron MILLER

IPC: C30B25/12 ,  C23C16/455 ,  C23C16/458

CPC classification number: C30B25/12 ,  C23C16/45504 ,  C23C16/4584 ,  C23C16/4585 ,  C30B35/00

Abstract: Embodiments of the present disclosure provide an improved susceptor for a substrate processing chamber. In one embodiment, the susceptor comprises an outer peripheral edge circumscribing a pocket, wherein the pocket has a concave surface that is recessed from the outer peripheral edge, and an angled support surface disposed between the outer peripheral edge and the pocket, wherein the angled support surface is inclined with respect to a horizontal surface of the outer peripheral edge.

Abstract translation: 本公开的实施例提供了用于衬底处理室的改进的基座。 在一个实施例中，所述基座包括围绕口袋的外周边缘，其中所述口袋具有从所述外周缘凹陷的凹面，以及设置在所述外周边缘和所述口袋之间的成角度的支撑表面， 表面相对于外周边缘的水平表面倾斜。

公开(公告)号：US20240274448A1

公开(公告)日：2024-08-15

申请号：US18108432

申请日：2023-02-10

Applicant: Applied Materials, Inc.

Inventor： Zhepeng CONG ,  Masato ISHII ,  Ernesto J. ULLOA ,  Shu-Kwan LAU ,  Bharath Bopanna PUTTICHANDA ,  Ashur J. ATANOS ,  Andrew KRETZSCHMAR

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  H01L21/677 ,  H01L21/687

CPC classification number: H01L21/67196 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/52 ,  C30B25/10 ,  C30B25/12 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/67167

Abstract: The present disclosure relates to transfer chambers, systems, and related components and methods, for pre-heating and pre-cooling substrate transfer apparatus. In one or more embodiments, the transfer apparatus are pre-heated and pre-cooled in relation to transferring substrates for substrate processing operations as part of semiconductor manufacturing. In one or more embodiments, a transfer chamber applicable for use in semiconductor manufacturing includes an internal volume, one or more sidewalls at least partially defining the internal volume, and a transfer apparatus disposed in the internal volume. The transfer apparatus includes one or more links, one or more motors configured to pivot the one or more links, and one or more substrate holders coupled to the one or more links. The transfer chamber includes a window that includes a transparent material, and one or more heat sources configured to direct heat into the internal volume through the window.

公开(公告)号：US20240254627A1

公开(公告)日：2024-08-01

申请号：US18122484

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Raja Murali DHAMODHARAN ,  Kalaivanan MOHANADASS ,  Aniketnitin PATIL ,  Martin Jeffrey SALINAS ,  Shu-Kwan LAU

IPC: C23C16/455 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14

CPC classification number: C23C16/45563 ,  C23C16/4586 ,  C30B25/12 ,  C30B25/14

Abstract: Embodiments of the present disclosure relate to injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing operations. In one or more embodiments, the liners facilitate gas flow uniformity in batch processing. In one or more embodiments, a liner includes a plurality of inlet openings on an inlet side, the plurality of inlet openings extending into an outer face of the liner. The plurality of inlet openings include a plurality of first inlet openings that include a first row extending into a first side face, and a second row extending into a second side face. The plurality of inlet openings include a plurality of second inlet openings extending between an inner face and the outer face. The liner includes one or more outlet openings on an outlet side. The outlet side opposes the inlet side. The one or more outlet openings extend into the inner face.

公开(公告)号：US20240175126A1

公开(公告)日：2024-05-30

申请号：US18070010

申请日：2022-11-28

Applicant: Applied Materials, Inc.

Inventor： Mukhles SOWWAN ,  Shu-Kwan LAU

IPC: C23C16/44 ,  B01D53/18 ,  B01D53/32 ,  C30B25/14

CPC classification number: C23C16/4412 ,  B01D53/18 ,  B01D53/326 ,  C23C16/4408 ,  C30B25/14

Abstract: The present disclosure generally relates to gas recycling systems, substrate processing systems, and related apparatus and methods for semiconductor manufacturing. In one or more implementations, unreacted gases from chambers can be used, recycled, and used one or more additional times. In one implementation, a gas recycling system includes a pump configured to fluidly connect to one or more outlet passages of a processing chamber to exhaust a gas from the processing chamber. The system includes one or more filtration devices in fluid communication with the pump such that the gas flows from the pump to the one or more filtration devices. The one or more filtration devices are configured to remove one or more impurities from the gas. The system includes a gas supply system in fluid communication with the one or more filtration devices such that the filtered gas flows to the gas supply system.

公开(公告)号：US20240044004A1

公开(公告)日：2024-02-08

申请号：US18381543

申请日：2023-10-18

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Koji NAKANISHI ,  Toshiyuki NAKAGAWA ,  Zuoming ZHU ,  Zhiyuan YE ,  Joseph M. RANISH ,  Nyi Oo MYO ,  Errol Antonio C. SANCHEZ ,  Schubert S. CHU

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  B23K26/00 ,  B23K26/12 ,  B23K26/06 ,  B23K26/03 ,  B23K26/08 ,  C23C16/52 ,  B23K26/352

CPC classification number: C23C16/46 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68764 ,  H01L21/68785 ,  B23K26/0006 ,  B23K26/128 ,  B23K26/0604 ,  B23K26/034 ,  B23K26/08 ,  C23C16/52 ,  H01L21/68742 ,  B23K26/352 ,  H01L21/6719 ,  B23K26/127 ,  B23K26/126 ,  B23K26/032 ,  B23K26/123 ,  H01L21/68757

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.