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    Electro-resistance element, electro-resistance memory using the same and method of manufacturing the same
    1.
    发明授权
    Electro-resistance element, electro-resistance memory using the same and method of manufacturing the same 失效
    电阻元件，使用该电阻元件的电阻存储器及其制造方法

    公开(公告)号：US07781230B2

    公开(公告)日：2010-08-24

    申请号：US11683580

    申请日：2007-03-08

    Applicant: Akihiro Odagawa ,  Yoshihisa Nagano

    Inventor： Akihiro Odagawa ,  Yoshihisa Nagano

    IPC: B23B9/00

    CPC classification number: C23C28/048 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/36 ,  G11C13/0007 ,  H01L27/101

    Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.

    Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。 电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。 电阻元件包括基板和设置在基板上的多层结构，多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 O 3和Fe 3 O 4 含有0重量％至20重量％的Fe 2 O 3的量，下电极由具有与电阻层不同的组成并含有Fe 3 O 4的氧化铁制成，并且电阻层和下电极 互相接触。

    Electro-resistance element and electro-resistance memory using the same
    2.
    发明授权
    Electro-resistance element and electro-resistance memory using the same 失效
    电阻元件和使用其的电阻存储器

    公开(公告)号：US07791119B2

    公开(公告)日：2010-09-07

    申请号：US11693960

    申请日：2007-03-30

    Applicant: Akihiro Odagawa ,  Yoshihisa Nagano

    Inventor： Akihiro Odagawa ,  Yoshihisa Nagano

    IPC: H01L29/94

    CPC classification number: H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.

    Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。

    Thermoelectric transducing material, and method for producing the same
    4.
    发明授权
    Thermoelectric transducing material, and method for producing the same 有权
    热电转换材料及其制造方法

    公开(公告)号：US07067205B2

    公开(公告)日：2006-06-27

    申请号：US10730096

    申请日：2003-12-09

    Applicant: Hideaki Adachi ,  Akihiro Odagawa

    Inventor： Hideaki Adachi ,  Akihiro Odagawa

    IPC: B32B18/00

    CPC classification number: H01L35/22 ,  H01L35/34 ,  Y10T428/12528

    Abstract: A thermoelectric transducing material according to this invention includes a layered cobaltite based substance represented by the chemical formula AxCoO2, wherein A consists of an element or element group selected from alkali metal elements and alkali earth group elements and is compositionally modulated in a thickness-wise direction of layers in a structure of the layered cobaltite based substance.

    Abstract translation: 根据本发明的热电转换材料包括由化学式A CoO 2 2表示的层状钴酸盐基物质，其中A由选自碱金属的元素或元素组成 金属元素和碱土金属元素，并且在层状钴酸盐基物质的结构中沿层的厚度方向组成调制。

    Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same
    6.
    发明授权
    Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same 失效
    磁阻元件及其制造方法以及使用该磁阻元件的磁头，磁存储器和磁记录装置

    公开(公告)号：US06943041B2

    公开(公告)日：2005-09-13

    申请号：US10719412

    申请日：2003-11-21

    Applicant: Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

    Inventor： Yasunari Sugita ,  Akihiro Odagawa ,  Nozomu Matsukawa ,  Yoshio Kawashima ,  Yasunori Morinaga

    IPC: G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L21/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B2005/3996 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

    Abstract: The present invention provides a method for producing a magnetoresistive element including a tunnel insulating layer, and a first magnetic layer and a second magnetic layer that are laminated so as to sandwich the tunnel insulating layer, wherein a resistance value varies depending on a relative angle between magnetization directions of the first magnetic layer and the second magnetic layer. The method includes the steps of: (i) laminating a first magnetic layer, a third magnetic layer and an Al layer successively on a substrate; (ii) forming a tunnel insulating layer containing at least one compound selected from the group consisting of an oxide, nitride and oxynitride of Al by performing at least one reaction selected from the group consisting of oxidation, nitriding and oxynitriding of the Al layer; and (iii) forming a laminate including the first magnetic layer, the tunnel insulating layer and a second magnetic layer by laminating the second magnetic layer in such a manner that the tunnel insulating layer is sandwiched by the first magnetic layer and the second magnetic layer. The third magnetic layer has at least one crystal structure selected from the group consisting of a face-centered cubic crystal structure and a face-centered tetragonal crystal structure and is (111) oriented parallel to a film plane of the third magnetic layer. According to this production method, it is possible to produce a magnetoresistive element with excellent properties and thermal stability.

    Abstract translation: 本发明提供了一种制造磁阻元件的方法，该磁阻元件包括隧道绝缘层，以及第一磁性层和第二磁性层，其被层压以夹住隧道绝缘层，其中电阻值根据相对角度而变化 第一磁性层和第二磁性层的磁化方向。 该方法包括以下步骤：（i）在衬底上依次层叠第一磁性层，第三磁性层和Al层; （ii）通过进行选自Al层的氧化，氮化和氮氧化的至少一种反应，形成包含至少一种选自Al的氧化物，氮化物和氮氧化物的化合物的隧道绝缘层; 以及（iii）通过层叠所述第二磁性层来形成包括所述第一磁性层，所述隧道绝缘层和第二磁性层的层压体，使得所述隧道绝缘层被所述第一磁性层和所述第二磁性层夹在中间。 第三磁性层具有至少一种选自面心立方晶体结构和面心四边形晶体结构的晶体结构，并且（111）取向为平行于第三磁性层的膜平面。 根据该制造方法，可以制造出具有优异性能和热稳定性的磁阻元件。

    Magnetic control device, and magnetic component and memory apparatus using the same
    8.
    发明授权
    Magnetic control device, and magnetic component and memory apparatus using the same 失效
    磁控装置及使用其的磁性部件及存储装置

    公开(公告)号：US06590268B2

    公开(公告)日：2003-07-08

    申请号：US09803571

    申请日：2001-03-09

    Applicant: Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

    Inventor： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

    IPC: H01L4300

    CPC classification number: G11C11/16

    Abstract: A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

    Abstract translation: 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。

    Superconducting device and a method of manufacturing the same
    9.
    发明授权
    Superconducting device and a method of manufacturing the same 失效
    超导装置及其制造方法

    公开(公告)号：US06147360A

    公开(公告)日：2000-11-14

    申请号：US82761

    申请日：1998-05-21

    Applicant: Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

    Inventor： Akihiro Odagawa ,  Hideaki Adachi ,  Kentaro Setsune

    IPC: H01L39/22 ,  H01L29/06

    CPC classification number: H01L39/225

    Abstract: This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin film) of oriented metal is provided on a substrate as a gate electrode. Then, an oxide insulating film (SrTiO.sub.3 thin film) is deposited on the convex region, and further a YBa.sub.2 Cu.sub.3 O.sub.7 oxide superconducting thin film is deposited on the oxide insulating film. Accordingly, a grain boundary part is formed on the convex region. A drain electrode and a source electrode are formed facing each other with the grain boundary part in between.

    Abstract translation: 本发明提供一种能够在基板上的任意位置再现的具有良好特性的超导装置及其制造方法。 在作为栅电极的基板上设置有取向金属的凸区域（经处理的线状的铂薄膜）。 然后，在凸区域上沉积氧化物绝缘膜（SrTiO 3薄膜），再在氧化物绝缘膜上沉积YBa2Cu3O7氧化物超导薄膜。 因此，在凸部形成有晶界部。 漏极电极和源极电极彼此面对地形成，晶界部分在其间。

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