公开(公告)号：US20120217129A1

公开(公告)日：2012-08-30

申请号：US13339426

申请日：2011-12-29

Applicant: Ryosuke TSUTSUMI ,  Hiroaki MURAKAMI ,  Yoshihisa NAGANO

Inventor： Ryosuke TSUTSUMI ,  Hiroaki MURAKAMI ,  Yoshihisa NAGANO

IPC: B23Q7/08

CPC classification number: B25J9/0093 ,  B23P21/004 ,  B25J9/0096 ,  Y10S901/16

Abstract: A work system according to embodiments includes a robot and work stations. The robot performs a predetermined work on a workpiece as a work target. The work stations are places where the predetermined work is performed on the workpiece. The robot performs conveying of the workpiece between the work stations.

Abstract translation: 根据实施方式的工作系统包括机器人和工作站。 机器人作为工作目标在工件上执行预定的工作。 工作站是在工件上执行预定工作的地方。 机器人在工作站之间执行工件的传送。

公开(公告)号：US07791119B2

公开(公告)日：2010-09-07

申请号：US11693960

申请日：2007-03-30

Applicant: Akihiro Odagawa ,  Yoshihisa Nagano

Inventor： Akihiro Odagawa ,  Yoshihisa Nagano

IPC: H01L29/94

CPC classification number: H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.

Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。

公开(公告)号：US20070246832A1

公开(公告)日：2007-10-25

申请号：US11693960

申请日：2007-03-30

Applicant: Akihiro ODAGAWA ,  Yoshihisa Nagano

Inventor： Akihiro ODAGAWA ,  Yoshihisa Nagano

IPC: H01L23/48

CPC classification number: H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.

Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。

公开(公告)号：US07053436B2

公开(公告)日：2006-05-30

申请号：US10752668

申请日：2004-01-08

Applicant: Yoshihisa Nagano ,  Toshie Kutsunai

Inventor： Yoshihisa Nagano ,  Toshie Kutsunai

IPC: H01L27/108

CPC classification number: H01L28/55 ,  H01L21/7687 ,  H01L27/10852 ,  H01L28/65

Abstract: A conductive oxygen barrier layer is formed on an interlayer dielectric film and patterned such that it is in contact with the top surface of a contact plug to prevent the diffusion of oxygen into the contact plug from above. The conductive oxygen barrier layer is composed of a lower layer containing a conductive nitride such as TiAlN, and an upper layer containing a conductive oxide such as IrO2. An insulative oxygen barrier layer composed of Al2O3 and having a thickness of approximately 20 nm is formed on the side surfaces of the conductive oxygen barrier layer to prevent the diffusion of oxygen into the contact plug from the sides, such as from the sides of the lower layer of the conductive barrier layer.

Abstract translation: 导电氧阻隔层形成在层间电介质膜上并被图案化，使得其与接触插塞的顶表面接触以防止氧气从上方扩散到接触塞中。 导电氧阻隔层由包含诸如TiAlN的导电氮化物的下层和包含诸如IrO 2的导电氧化物的上层组成。 在导电氧阻隔层的侧表面上形成厚度约为20nm的由Al 2 O 3 3 N 2构成的绝缘性氧阻隔层，以防止扩散 氧从侧面进入接触塞，例如从导电阻挡层的下层的侧面。

公开(公告)号：US06939725B2

公开(公告)日：2005-09-06

申请号：US10769808

申请日：2004-02-03

Applicant: Toshie Kutsunai ,  Shinichiro Hayashi ,  Yuji Judai ,  Yoshihisa Nagano

Inventor： Toshie Kutsunai ,  Shinichiro Hayashi ,  Yuji Judai ,  Yoshihisa Nagano

IPC: H01L23/522 ,  C23C16/40 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/06 ,  H01L27/105 ,  H01L27/108 ,  H01L21/00 ,  H01L29/76

CPC classification number: H01L28/55 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31612

Abstract: A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.

Abstract translation: 在半导体衬底上形成包括电容器下电极，高电介质膜的电容器电介质膜或铁电体膜和电容器上电极的电容器。 在半导体衬底上形成保护膜以覆盖电容器。 具有相对较大含水量的第一TEOS膜通过臭氧浓度相对较低的第一TEOS-O 3 CVD形成在保护膜上。 通过第二TEOS-O 3 3在第一TEOS-O 3膜上形成具有相对较小含水量的第二TEOS-O 3膜。 臭氧浓度相对较高的CVD。

公开(公告)号：US20050045990A1

公开(公告)日：2005-03-03

申请号：US10950532

申请日：2004-09-28

Applicant: Keisaku Nakao ,  Akihiro Matsuda ,  Yasufumi Izutsu ,  Toyoji Ito ,  Takumi Mikawa ,  Toru Nasu ,  Yoshihisa Nagano ,  Keisuke Tanaka ,  Toshie Kutsunai

Inventor： Keisaku Nakao ,  Akihiro Matsuda ,  Yasufumi Izutsu ,  Toyoji Ito ,  Takumi Mikawa ,  Toru Nasu ,  Yoshihisa Nagano ,  Keisuke Tanaka ,  Toshie Kutsunai

IPC: H01L21/02 ,  H01L21/8242 ,  H01L21/00

CPC classification number: H01L28/55

Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract translation: 本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。 在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。 在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。 在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

公开(公告)号：US06849887B2

公开(公告)日：2005-02-01

申请号：US09103873

申请日：1998-06-24

Applicant: Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

Inventor： Yoshihisa Nagano ,  Toshie Kutsunai ,  Yuji Judai ,  Yasuhiro Uemoto ,  Eiji Fujii

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L29/76

CPC classification number: H01L27/1085 ,  H01L21/76895 ,  H01L23/5223 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

Abstract translation: 半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

公开(公告)号：US06847074B2

公开(公告)日：2005-01-25

申请号：US09785502

申请日：2001-02-20

Applicant: Yoshihisa Nagano ,  Tooru Nasu ,  Shinichiro Hayashi ,  Eiji Fujii

Inventor： Yoshihisa Nagano ,  Tooru Nasu ,  Shinichiro Hayashi ,  Eiji Fujii

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/8242 ,  H01L27/105 ,  H01L29/72

CPC classification number: H01L28/75 ,  H01L27/10852 ,  H01L28/55

Abstract: A semiconductor memory device according to the present invention includes a memory cell capacitor for storing data thereon. The capacitor is made up of a first electrode connected to a contact plug, a second electrode and a capacitive insulating film interposed between the first and second electrodes. The first electrode includes a first barrier film in contact with the contact plug and a second barrier film, which is formed on the first barrier film and prevents the diffusion of oxygen. The second barrier film covers the upper and side faces of the first barrier film.

Abstract translation: 根据本发明的半导体存储器件包括用于在其上存储数据的存储单元电容器。 电容器由连接到第一和第二电极之间的接触插塞，第二电极和电容绝缘膜的第一电极组成。 第一电极包括与接触塞接触的第一阻挡膜和形成在第一阻挡膜上并防止氧的扩散的第二阻挡膜。 第二阻挡膜覆盖第一阻挡膜的上表面和侧面。

公开(公告)号：US06818498B2

公开(公告)日：2004-11-16

申请号：US10391617

申请日：2003-03-20

Applicant: Takumi Mikawa ,  Yuji Judai ,  Yoshihisa Nagano

Inventor： Takumi Mikawa ,  Yuji Judai ,  Yoshihisa Nagano

IPC: H01L218242

CPC classification number: H01L28/55 ,  H01L28/60 ,  Y10S438/957

Abstract: On a substrate, there are provided a lower electrode, a capacitance insulating film, a passivation insulating film, and a first partial film of an upper electrode to be filled in a second aperture (capacitance determining aperture) formed in the passivation insulating film. The lower electrode, the capacitance insulating film, and the first partial film constitute a capacitance element. The upper electrode has the first partial film which is in contact with the capacitance insulating film and a second partial film which is not in contact with the capacitance insulating film. Since a second electrode wire consisting of a lower-layer film composed of titanium and an upper-layer film composed of an aluminum alloy film is in contact with the second partial film distinct from the first partial film of the upper electrode, titanium or the like encroaching from the second electrode wire can be prevented from diffusing into the capacitance insulating film.

Abstract translation: 在基板上，设置有被填充在形成在钝化绝缘膜中的第二孔（电容确定孔）中的下电极，电容绝缘膜，钝化绝缘膜和上电极的第一部分膜。 下电极，电容绝缘膜和第一部分膜构成电容元件。 上电极具有与电容绝缘膜接触的第一部分膜和不与电容绝缘膜接触的第二部分膜。 由于由钛构成的下层膜和由铝合金膜构成的上层膜构成的第2电极线与上部电极的第1部分膜不同的第2部分膜接触，钛等 可以防止从第二电极线的侵入扩散到电容绝缘膜。

公开(公告)号：US06781179B2

公开(公告)日：2004-08-24

申请号：US10152774

申请日：2002-05-23

Applicant: Toru Nasu ,  Yoshihisa Nagano

Inventor： Toru Nasu ,  Yoshihisa Nagano

IPC: H01L27108

CPC classification number: H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75

Abstract: The semiconductor memory device of the present invention includes: an interlayer insulating film formed on a semiconductor substrate; a contact plug formed to extend through the interlayer insulating film; and a capacitor formed on the interlayer insulating film so that an electrode of the capacitor is connected with the contact plug. The electrode has an iridium oxide film as an oxygen barrier film. The average grain size of granular crystals constituting the iridium oxide film is a half or less of the thickness of the iridium oxide film.

Abstract translation: 本发明的半导体存储器件包括：形成在半导体衬底上的层间绝缘膜; 形成为延伸穿过所述层间绝缘膜的接触插塞; 以及形成在层间绝缘膜上的电容器，使得电容器的电极与接触插塞连接。 电极具有作为氧阻隔膜的氧化铱膜。 构成氧化铱膜的粒状晶体的平均粒径为氧化铱膜的厚度的一半以下。