Invention Grant
- Patent Title: Electro-resistance element and electro-resistance memory using the same
- Patent Title (中): 电阻元件和使用其的电阻存储器
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Application No.: US11693960Application Date: 2007-03-30
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Publication No.: US07791119B2Publication Date: 2010-09-07
- Inventor: Akihiro Odagawa , Yoshihisa Nagano
- Applicant: Akihiro Odagawa , Yoshihisa Nagano
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2006-115091 20060419
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.
Public/Granted literature
- US20070246832A1 ELECTRO-RESISTANCE ELEMENT AND ELECTRO-RESISTANCE MEMORY USING THE SAME Public/Granted day:2007-10-25
Information query
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