公开(公告)号：US20070240995A1

公开(公告)日：2007-10-18

申请号：US11683580

申请日：2007-03-08

Applicant: Akihiro ODAGAWA ,  Yoshihisa Nagano

Inventor： Akihiro ODAGAWA ,  Yoshihisa Nagano

IPC: B32B9/00 ,  C23C28/00 ,  B32B19/00

CPC classification number: C23C28/048 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/36 ,  G11C13/0007 ,  H01L27/101

Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values between a pair of electrodes and is switchable from one of the two or more states into another by applying a predetermined voltage or current between the electrodes. The electro-resistance element includes a substrate and a multilayer structure disposed on the substrate, the multilayer structure includes an upper electrode, a lower electrode and an electro-resistance layer disposed between the electrodes, wherein the electro-resistance layer includes Fe2O3, and Fe3O4 contained in an amount of 0% to 20% of Fe2O3 in percent by weight, the lower electrode is made of an iron oxide having a different composition from the electro-resistance layer and containing Fe3O4, and the electro-resistance layer and the lower electrode make contact with each other.

Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺和电阻变化特性的亲和性优异的电阻元件。 电阻元件具有两个或更多个状态，其中一对电极之间的电阻值可以通过在电极之间施加预定的电压或电流而从两个或更多个状态之一切换到另一个状态。 电阻元件包括基板和布置在基板上的多层结构，该多层结构包括上电极，下电极和设置在电极之间的电阻层，其中电阻层包括Fe 2 <3 O 3，Fe 3 O 4含有0〜20％的Fe 2 O 3 下部电极由与电阻层不同的组成的氧化铁制成，并含有Fe 3 O 3， SUB> 4 <！ - SIPO - >电极层和下电极彼此接触。

公开(公告)号：US20070246832A1

公开(公告)日：2007-10-25

申请号：US11693960

申请日：2007-03-30

Applicant: Akihiro ODAGAWA ,  Yoshihisa Nagano

Inventor： Akihiro ODAGAWA ,  Yoshihisa Nagano

IPC: H01L23/48

CPC classification number: H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1625 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An electro-resistance element that has a different configuration from conventional elements and is excellent in both affinity with semiconductor manufacturing processes and heat treatment stability under a hydrogen-containing atmosphere is provided. An electro-resistance element includes an electro-resistance layer that has two or more states in which electric resistance values are different and being switchable from one of the two or more states into another by applying a predetermined voltage or current. The electro-resistance layer includes first and second elements being capable of forming a nitride, and nitrogen.

Abstract translation: 提供了具有与常规元件不同的构造并且与半导体制造工艺的亲和性优异且在含氢气氛下的热处理稳定性优异的电阻元件。 电阻元件包括具有两个或更多个状态的电阻层，其中电阻值不同并且可以通过施加预定电压或电流从两个或更多个状态中的一个切换到另一个状态。 电阻层包括能够形成氮化物的第一和第二元素和氮。

公开(公告)号：US20110094823A1

公开(公告)日：2011-04-28

申请号：US12980960

申请日：2010-12-29

Applicant: Akihiro ODAGAWA

Inventor： Akihiro ODAGAWA

IPC: G10K15/04 ,  B05D3/02

CPC classification number: H04R23/002

Abstract: A sound wave generator that exhibits more excellent output properties than conventional ones, based on the combination of a base layer and a heat-insulating layer that cannot be expected from conventional techniques is provided. The sound wave generator includes a base layer; a heat-insulating layer disposed on the base layer; and a heat pulse source that applies heat pulses to the heat-insulating layer. The base layer is composed of graphite or sapphire, and the heat-insulating layer is composed of crystalline fine particles containing silicon or germanium. The heat pulse source, for example, is a heat pulse-generating layer that is disposed on the surface of the heat-insulating layer opposite to the base layer and applies heat pulses to the heat-insulating layer.

Abstract translation: 提供了基于传统技术中不能期望的基础层和绝热层的组合，表现出比传统的更好的输出性能的声波发生器。 所述声波发生器包括基底层; 设置在所述基底层上的绝热层; 以及向绝热层施加热脉冲的热脉冲源。 基层由石墨或蓝宝石构成，隔热层由含有硅或锗的结晶微粒构成。 例如，热脉冲源是设置在与基底层相反的绝热层的表面上的热脉冲发生层，并且对隔热层施加热脉冲。

公开(公告)号：US20120205762A1

公开(公告)日：2012-08-16

申请号：US13454696

申请日：2012-04-24

Applicant: Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

Inventor： Nozomu MATSUKAWA ,  Akihiro ODAGAWA ,  Akio MATSUSHITA

IPC: H01L29/82

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L43/10

Abstract: The magnetic tunnel junction device of the present invention includes a first ferromagnetic layer, a second ferromagnetic layer, an insulating layer formed between the first ferromagnetic layer and the second ferromagnetic layer. The insulating layer is composed of fluorine-added MgO. The fluorine content in the insulating layer is 0.00487 at. % or more and 0.15080 at. % or less. This device, although it includes a MgO insulating layer, exhibits superior magnetoresistance properties to conventional devices including MgO insulating layers. The fluorine content is preferably 0.00487 at. % or more and 0.05256 at. % or less.

Abstract translation: 本发明的磁性隧道结装置包括第一铁磁层，第二铁磁层，形成在第一铁磁层和第二铁磁层之间的绝缘层。 绝缘层由添加氟的MgO构成。 绝缘层中的氟含量为0.00487at。 ％以上0.15080。 ％ 或更少。 该器件虽然包括MgO绝缘层，但是对于包括MgO绝缘层的常规器件，具有优异的磁阻性能。 氟含量优选为0.00487at。 ％以上0.05256。 ％ 或更少。

公开(公告)号：US20080048164A1

公开(公告)日：2008-02-28

申请号：US11774101

申请日：2007-07-06

Applicant: Akihiro ODAGAWA

Inventor： Akihiro ODAGAWA

IPC: H01L29/02 ,  H01L21/00

CPC classification number: G11C13/0007 ,  G11C2213/51 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

Abstract: An electro-resistance element that develops less leakage and fewer associated short-circuits even when an electro-resistance layer is made thinner, a method of manufacturing the same and an electro-resistance memory using the same are provided. The electro-resistance element includes a first electrode, a second electrode, an electro-resistance layer stacked between the first and the second electrodes and an insulating layer (a tunnel barrier layer). The tunnel barrier layer has a thickness in a range from 0.5 nm to 5 nm both inclusive. The electro-resistance layer is a layer having a plurality of states in which electric resistance values are different and being switchable between the states by applying a voltage or a current between the first and the second electrodes. The electro-resistance layer contains transition metal oxide as its main component.

Abstract translation: 即使当使电阻层变薄时，电阻元件也能产生更少的泄漏和更少的相关短路，提供其制造方法和使用该电阻元件的电阻存储器。 电阻元件包括第一电极，第二电极，堆叠在第一和第二电极之间的电阻层和绝缘层（隧道势垒层）。 隧道势垒层的厚度在0.5nm〜5nm的范围内。 电阻层是具有多个状态的层，其中电阻值不同，并且可以通过在第一和第二电极之间施加电压或电流在状态之间切换。 电阻层含有过渡金属氧化物作为其主要成分。