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    Light-emitting diode
    6.
    发明授权
    Light-emitting diode 有权
    发光二极管

    公开(公告)号：US08193548B2

    公开(公告)日：2012-06-05

    申请号：US13284294

    申请日：2011-10-28

    Applicant: Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    Inventor： Hiroyuki Tanaka ,  Nobuaki Nagao ,  Takahiro Hamada ,  Eiji Fujii

    IPC: H01L33/00

    CPC classification number: H01L33/42 ,  H01L2933/0083 ,  H01L2933/0091

    Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

    Abstract translation: 发光二极管包括堆叠在其中的n型氮化物半导体层，多量子阱层，p型氮化物半导体层，窗口电极层，p侧电极和n侧电极 订购。 n侧电极与n型氮化物半导体层电连接。 窗口电极层包括n型单晶ITO透明膜和n型单晶ZnO透明膜。 p型氮化物半导体层与n型单晶ITO透明膜接触。 发光二极管还包括形成在n型单晶ZnO透明膜上的多个单晶ZnO棒。 单晶ZnO棒的各自的下部具有从单晶n型ZnO透明膜朝向n型氮化物半导体层而锐化的倒锥形。

    PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR
    8.
    发明申请
    PYROELECTRIC TEMPERATURE SENSOR AND A METHOD FOR MEASURING A TEMPERATURE WITH THE PYROELECTRIC TEMPERATURE SENSOR 有权
    光伏温度传感器和用于测量温度传感器的方法

    公开(公告)号：US20110299566A1

    公开(公告)日：2011-12-08

    申请号：US13207940

    申请日：2011-08-11

    Applicant: Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    Inventor： Michihito Ueda ,  Hiroyuki Tanaka ,  Yukihiro Kaneko ,  Eiji Fujii

    IPC: G01K7/36

    CPC classification number: H01L37/02 ,  G01K7/36

    Abstract: A temperature sensor includes first and second lower electrodes, a ferroelectric layer having polarization, a semiconductor layer; and first to third upper electrodes. The second upper electrode is interposed between the first upper electrode and the third upper electrode in a plan view. The semiconductor layer includes a first channel disposed between the first upper electrode and the second upper electrode, and a second channel disposed between the second upper electrode and the third upper electrode. The ferroelectric layer includes a first ferroelectric part disposed below the first channel and a second ferroelectric part disposed below the second channel. A polarization direction of the first ferroelectric part is opposite to a polarization direction of the second first ferroelectric part. The temperature is calculated based on the output voltage from the second upper electrode and the voltage applied to the first upper electrode.

    Abstract translation: 温度传感器包括第一和第二下部电极，具有极化的铁电体层，半导体层; 和第一至第三上电极。 第二上电极在平面图中插入在第一上电极和第三上电极之间。 半导体层包括设置在第一上电极和第二上电极之间的第一通道和设置在第二上电极和第三上电极之间的第二通道。 铁电层包括设置在第一通道下方的第一铁电体部分和设置在第二通道下方的第二铁电体部分。 第一铁电体部的偏振方向与第二第一强电介质部的偏振方向相反。 基于来自第二上电极的输出电压和施加到第一上电极的电压来计算温度。

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