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140 条记录 (耗时 0.036 秒)

    ACTUATOR AND METHOD FOR DRIVING ACTUATOR
    4.
    发明申请
    ACTUATOR AND METHOD FOR DRIVING ACTUATOR 有权
    执行器和驱动执行器的方法

    公开(公告)号：US20120043857A1

    公开(公告)日：2012-02-23

    申请号：US13282089

    申请日：2011-10-26

    申请人： Michihito UEDA ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

    发明人： Michihito UEDA ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

    IPC分类号： H01L41/18

    CPC分类号： H01L41/094 ,  H01L41/042 ,  H01L41/187 ,  H01L41/316

    摘要： The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed.The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

    摘要翻译： 本发明的目的是提供一种驱动致动器的方法，其中不必要的变形被抑制。 本发明提供一种用于驱动致动器的方法，包括以下步骤（a）和（b）：制备致动器的步骤（a），其中致动器包括第一电极，由（Bi，Na ，Ba）TiO 3和第二电极，压电层插入在第一电极和第二电极之间，+ X方向，+ Y方向和+ Z方向表示[100]方向，[01-1]方向，以及 方向，并且压电层优先沿着+ Z方向取向; 以及在第一电极和第二电极之间施加电位差以驱动致动器的步骤（b）。

    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
    6.
    发明授权
    Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
    压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置

    公开(公告)号：US07478558B2

    公开(公告)日：2009-01-20

    申请号：US11362583

    申请日：2006-02-24

    申请人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

    发明人： Eiji Fujii ,  Hideo Torii ,  Ryoichi Takayama ,  Atsushi Tomozawa ,  Akiko Murata ,  Taku Hirasawa

    IPC分类号： G01C19/00 ,  B41J2/045 ,  H01L41/04

    CPC分类号： H01L41/0815 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1646 ,  B41J2002/14491 ,  B41J2202/03 ,  G01C19/5607 ,  H01L41/1876 ,  H01L41/316 ,  Y10T29/49401

    摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.

    摘要翻译： 在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向 远离第一电极层14朝向相对侧。 此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

    Dielectric memory and method for fabricating the same
    9.
    发明申请
    Dielectric memory and method for fabricating the same 审中-公开
    介质记忆及其制造方法

    公开(公告)号：US20050082637A1

    公开(公告)日：2005-04-21

    申请号：US10964703

    申请日：2004-10-15

    申请人： Takumi Mikawa ,  Eiji Fujii

    发明人： Takumi Mikawa ,  Eiji Fujii

    IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/8242 ,  H01L29/00

    CPC分类号： H01L28/55 ,  H01L21/7687 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75 ,  H01L28/91

    摘要： A semiconductor device is provided with an insulating film which is formed on a semiconductor substrate and has a first recess, a capacitor lower electrode which is formed on the walls and the bottom of the first recess and has a second recess, and a capacitor insulating film which is formed on the walls and the bottom of the second recess and has a third recess, and a capacitor upper electrode embedded in the third recess.

    摘要翻译： 半导体器件设置有绝缘膜，该绝缘膜形成在半导体衬底上并且具有第一凹部，形成在第一凹部的壁和底部上并具有第二凹部的电容器下电极，以及电容器绝缘膜 其形成在第二凹部的壁和底部上，并且具有第三凹部，以及嵌入在第三凹部中的电容器上电极。

    Capacitor, semiconductor memory device, and method for manufacturing the same
    10.
    发明授权
    Capacitor, semiconductor memory device, and method for manufacturing the same 有权
    电容器，半导体存储器件及其制造方法

    公开(公告)号：US06730951B2

    公开(公告)日：2004-05-04

    申请号：US10175804

    申请日：2002-06-21

    申请人： Yoshihisa Nagano ,  Eiji Fujii

    发明人： Yoshihisa Nagano ,  Eiji Fujii

    IPC分类号： H01L27108

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A capacitor includes: a lower electrode; a capacitor insulating film made of a metal oxide and formed on the lower electrode; an upper electrode formed on the capacitor insulating film; and a buried insulating film surrounding the lower electrode. The lower electrode includes a conductive barrier layer that prevents diffusion of oxygen, and an insulating barrier layer that prevents diffusion of hydrogen is formed so as to be in contact with at least a side surface of the conductive barrier layer in a side surface of the lower electrode.

    摘要翻译： 电容器包括：下电极; 由金属氧化物制成的电容绝缘膜，形成在下电极上; 形成在所述电容绝缘膜上的上电极; 以及包围下电极的掩埋绝缘膜。 下电极包括防止氧的扩散的导电阻挡层，并且形成防止氢的扩散的绝缘阻挡层，以在下部电极的侧表面中与至少导电阻挡层的侧表面接触 电极。