公开(公告)号：US20130009713A1

公开(公告)日：2013-01-10

申请号：US13614498

申请日：2012-09-13

Applicant: Yu NISHITANI ,  Yukihiro KANEKO ,  Michihito UEDA

Inventor： Yu NISHITANI ,  Yukihiro KANEKO ,  Michihito UEDA

IPC: H03B5/24

CPC classification number: H03B5/20 ,  H01G7/06 ,  H01L23/64 ,  H01L25/16 ,  H01L28/20 ,  H01L28/40 ,  H01L28/55 ,  H01L28/56 ,  H01L2924/0002 ,  H03B5/24 ,  H03B2200/004 ,  H03B2201/02 ,  H03B2201/0208 ,  H01L2924/00

Abstract: A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, which comprise a resistance and a capacitance. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitance. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film.

Abstract translation: 电阻 - 电容振荡电路包括放大器和移相电路。 相移电路包括至少三个电阻 - 电容电路元件，其包括电阻和电容。 电阻 - 电容电路元件中的至少一个包括可变电阻和可变电容。 可变电阻由第一电极，第二电极，半导体膜的一部分，铁电体膜的一部分和第四电极形成。 可变电容器由第二电极，第三电极，第五电极，铁电体膜的另一部分，半导体膜的另一部分和顺电膜形成。

公开(公告)号：US08228708B2

公开(公告)日：2012-07-24

申请号：US13222658

申请日：2011-08-31

Applicant: Yukihiro Kaneko ,  Hiroyuki Tanaka ,  Michihito Ueda

Inventor： Yukihiro Kaneko ,  Hiroyuki Tanaka ,  Michihito Ueda

IPC: G11C11/22

CPC classification number: G11C11/22 ,  H01L27/1159 ,  H01L29/4908 ,  H01L29/6684 ,  H01L29/78391 ,  H01L29/78648

Abstract: In the operating method of the semiconductor memory device, (1) voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2>Vs, and V2>Vd, are applied to a first gate electrode, a second gate electrode, a source electrode, and a drain electrode to write a first resistance value, respectively, (2) the voltages V1, V2, Vs, and Vd, which satisfy V1>Vs, V1>Vd, V2

Abstract translation: 在半导体存储器件的操作方法中，（1）对第一栅电极施加满足V1> Vs，V1> Vd，V2> Vs，V2> Vd的电压V1，V2，Vs，Vd， 分别写入第一电阻值的第二栅电极，源电极和漏电极，（2）满足V1> Vs，V1> Vd，V2

公开(公告)号：US08217555B2

公开(公告)日：2012-07-10

申请号：US13282089

申请日：2011-10-26

Applicant: Michihito Ueda ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

Inventor： Michihito Ueda ,  Takakiyo Harigai ,  Yoshiaki Tanaka ,  Hideaki Adachi ,  Eiji Fujii

IPC: H01L41/187 ,  H01L41/24

CPC classification number: H01L41/094 ,  H01L41/042 ,  H01L41/187 ,  H01L41/316

Abstract: The purpose of the present invention is to provide a method for driving an actuator in which unnecessary deformation is suppressed.The present invention provides a method for driving an actuator, comprising the following steps (a) and (b): a step (a) of preparing the actuator, wherein the actuator comprises a first electrode, a piezoelectric layer composed of (Bi,Na,Ba)TiO3, and a second electrode, the piezoelectric layer is interposed between the first electrode and the second electrode, +X direction, +Y direction, and +Z direction denote [100] direction, [01-1] direction, and [011] direction, respectively, and the piezoelectric layer is preferentially oriented along the +Z direction; and a step (b) of applying a potential difference between the first electrode and the second electrode to drive the actuator.

Abstract translation: 本发明的目的是提供一种驱动致动器的方法，其中不必要的变形被抑制。 本发明提供一种用于驱动致动器的方法，包括以下步骤（a）和（b）：制备致动器的步骤（a），其中致动器包括第一电极，由（Bi，Na ，Ba）TiO 3和第二电极，压电层插入在第一电极和第二电极之间，+ X方向，+ Y方向和+ Z方向表示[100]方向，[01-1]方向，以及 方向，并且压电层优先沿着+ Z方向取向; 以及在第一电极和第二电极之间施加电位差以驱动致动器的步骤（b）。

公开(公告)号：US07449967B2

公开(公告)日：2008-11-11

申请号：US10532993

申请日：2004-03-01

Applicant: Michihito Ueda

Inventor： Michihito Ueda

IPC: G01S3/803

CPC classification number: H03K3/84

Abstract: A stochastic pulse generator (1) of this invention includes a variable signal generator (61) operative to generate a variable signal (VC) which varies randomly, and a comparator (3) operative to output a binary signal (Vout) of High or Low depending on which of one input signal and another input signal is larger or smaller than the other, wherein when the variable signal (VC) is inputted, as the one input signal, to the comparator (3) from the variable signal generator (61), the comparator (3) stochastically outputs pulses, the number of which corresponds to a magnitude of the another input signal.

Abstract translation: 本发明的随机脉冲发生器（1）包括可变信号发生器（61），其可操作以产生随机变化的可变信号（V SUB）;以及比较器（3），用于输出二进制 根据一个输入信号和另一个输入信号中的哪一个大于或小于另一个输入信号的高或低的信号（V OUT），其中当可变信号（V SUB） ）作为一个输入信号从可变信号发生器（61）输入到比较器（3），比较器（3）随机输出脉冲数，其数量对应于另一个输入信号的大小。

公开(公告)号：US07419529B2

公开(公告)日：2008-09-02

申请号：US11284910

申请日：2005-11-23

Applicant: Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

Inventor： Shigeo Yoshii ,  Michihito Ueda ,  Nozomu Matsukawa ,  Ichiro Yamashita

IPC: B22F9/20

CPC classification number: B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332

Abstract: An object of the present invention is to provide a method of forming fine particles on a substrate in which reoxidization of reduced fine particles is suppressed. Reduced fine particles (FeO fine particles) are formed by embedding metal oxide fine particles (Fe2O3 fine particles) fixed on a p type silicon semiconductor substrate into a silicon oxidized film, and carrying out a heat treatment in a reducing gas atmosphere. Presence of the silicon oxidized film enables suppression of reoxidization of the reduced fine particles (FeO fine particles) due to exposure to the ambient air.

Abstract translation: 本发明的目的是提供一种在抑制还原的微粒的再氧化的基板上形成微粒的方法。 通过将固定在p型硅半导体衬底上的金属氧化物微粒（Fe 2 O 3 O 3微粒）嵌入到硅氧化膜中而形成还原的微粒（FeO微粒） ，并在还原气体气氛中进行热处理。 硅氧化膜的存在能够抑制由于暴露于环境空气而导致的还原的微粒（FeO微粒）的再氧化。

公开(公告)号：US06844582B2

公开(公告)日：2005-01-18

申请号：US10434358

申请日：2003-05-09

Applicant: Michihito Ueda ,  Kenji Toyoda ,  Takashi Ohtsuka ,  Kiyoyuki Morita

Inventor： Michihito Ueda ,  Kenji Toyoda ,  Takashi Ohtsuka ,  Kiyoyuki Morita

IPC: G06N3/063 ,  G11C27/00 ,  H01L21/8246 ,  H01L21/8247 ,  H01L21/84 ,  H01L27/115 ,  H01L27/12 ,  H01L45/00 ,  H01L29/76 ,  H01L27/108 ,  G06F15/18 ,  G06G7/00

CPC classification number: H01L27/11502 ,  G06N3/0635 ,  G11C11/54 ,  G11C27/00 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11507 ,  H01L27/11521 ,  H01L27/11585 ,  H01L27/1159 ,  H01L27/1203 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144

Abstract: A learning method of a semiconductor device of the present invention comprises a neuro device having a multiplier as a synapse in which a weight varies according to an input weight voltage, and functioning as a neural network system that processes analog data, comprising a step A of inputting predetermined input data to the neuro device and calculating an error between a target value of an output of the neuro device with respect to the input data and an actual output, a step B of calculating variation amount in the error by varying a weight of the multiplier thereafter, and a step C of varying the weight of the multiplier based on the variation amount in the error, wherein in the steps B and C, after inputting a reset voltage for setting the weight to a substantially constant value to the multiplier as the weight voltage, the weight is varied by inputting the weight voltage corresponding to the weight to be varied.

Abstract translation: 本发明的半导体器件的学习方法包括具有倍增器作为突触的神经器件，其中重量根据输入重量电压而变化，并且用作处理模拟数据的神经网络系统，其包括步骤A的步骤A 向神经装置输入预定的输入数据并计算神经装置的输出的目标值相对于输入数据与实际输出之间的误差;步骤B，通过改变神经元的重量来计算误差的变化量; 之后的乘法器，以及基于误差变化量来改变乘法器的权重的步骤C，其中在步骤B和C中，在输入用于将权重设定为基本恒定值的复位电压之后， 重量电压，通过输入与要变化的重量相对应的重量电压来改变重量。

公开(公告)号：US06541278B2

公开(公告)日：2003-04-01

申请号：US09492350

申请日：2000-01-27

Applicant: Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

Inventor： Kiyoyuki Morita ,  Takashi Ohtsuka ,  Michihito Ueda

IPC: C23C1606

CPC classification number: H01L29/513 ,  C23C16/409 ,  C23C16/4485 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28291 ,  H01L21/31691 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.

Abstract translation: 将半导体衬底放置在壳体内。 通过将超临界状态的有机金属配合物和二氧化碳供给到壳体中，在铂薄膜上形成BST薄膜，同时除去形成BST薄膜时产生的碳化合物。 碳化合物在超临界二氧化碳中的溶解度非常高，而超临界二氧化碳的粘度低。 因此，碳化合物可从BST薄膜有效地去除。 氧化物或氮化物膜也可以通过使用例如超临界或亚临界状态的水在低温下进行氧化或氮化来形成。

公开(公告)号：US20130009714A1

公开(公告)日：2013-01-10

申请号：US13614624

申请日：2012-09-13

Applicant: Yu NISHITANI ,  Yukihiro KANEKO ,  Michihito UEDA

Inventor： Yu NISHITANI ,  Yukihiro KANEKO ,  Michihito UEDA

IPC: H03B5/24

CPC classification number: H03B5/20 ,  H01L27/0682 ,  H01L28/20 ,  H01L28/40 ,  H01L28/56 ,  H03B5/24 ,  H03B2200/004 ,  H03B2201/02 ,  H03B2201/0208

Abstract: A resistance-capacitance oscillation circuit comprises an amplifier and a phase shifting circuit. The phase shifting circuit comprises at least three resistance-capacitance circuit elements, each of which comprises a resistance and a capacitor. At least one of the resistance-capacitance circuit elements comprises a variable resistance and a variable capacitor. The variable resistance is formed of a first electrode, a second electrode, a part of a semiconductor film, a part of a ferroelectric film, and a fourth electrode. The variable capacitor is formed of the second electrode, a third electrode, a fifth electrode, another part of the ferroelectric film, another part of the semiconductor film, and a paraelectric film.

Abstract translation: 电阻 - 电容振荡电路包括放大器和移相电路。 相移电路包括至少三个电阻 - 电容电路元件，每个电阻电容元件包括电阻和电容器。 电阻 - 电容电路元件中的至少一个包括可变电阻和可变电容。 可变电阻由第一电极，第二电极，半导体膜的一部分，铁电体膜的一部分和第四电极形成。 可变电容器由第二电极，第三电极，第五电极，铁电体膜的另一部分，半导体膜的另一部分和顺电膜形成。

公开(公告)号：US20110278991A1

公开(公告)日：2011-11-17

申请号：US13191139

申请日：2011-07-26

Applicant: Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

Inventor： Takakiyo HARIGAI ,  Michihito Ueda ,  Hideaki Adachi ,  Eiji Fujii

IPC: H02N2/18

CPC classification number: H02N2/186 ,  H01L41/1134

Abstract: Provided is a relatively easy-to-fabricate piezoelectric power generating element capable of generating a large amount of electric power while comprising a bridge-type vibration beam that is resistant to damage from external vibration. This element comprises a support member, a strip-shaped vibration beam, a piezoelectric layer, and electrodes. The first and second ends of the vibration beam are fixed to the support member. The piezoelectric layer and the electrodes are provided on the surface of the vibration beam. The vibration beam extends in a plane when it is not vibrating. The vibration beam has a first portion that extends from the first end fixed to the support member, a second portion that extends from the second end fixed to the support member, and a third portion that connects the end of the first portion opposite to the first end and the end of the second portion opposite to the second end. The vibration beam has a shape such that, when viewed in a direction perpendicular to the plane, a first direction in which the first portion extends is a direction closer to the second end, and a second direction in which the second portion extends is a direction closer to the first end, the first and second directions each make an angle of more than 0° and less than 90° with respect to a straight line connecting the center of the first end and the center of the second end, and the third portion intersects once the straight line.

Abstract translation: 提供一种相对容易制造的能够产生大量电力的压电发电元件，同时包括耐外部振动损坏的桥式振动梁。 该元件包括支撑构件，条形振动梁，压电层和电极。 振动梁的第一和第二端固定在支撑构件上。 压电层和电极设置在振动梁的表面上。 当振动梁不振动时，振动梁在平面内延伸。 振动梁具有从固定到支撑构件的第一端延伸的第一部分，从固定到支撑构件的第二端延伸的第二部分，以及连接第一部分的与第一部分相对的端部的第三部分 端部和第二部分的与第二端相对的端部。 所述振动梁具有这样的形状：当从垂直于所述平面的方向观察时，所述第一部分延伸的第一方向是更靠近所述第二端的方向，并且所述第二部分延伸的第二方向是方向 更靠近第一端，第一和第二方向相对于连接第一端的中心和第二端的中心的直线大于0°且小于90°，​​并且第三部分 相交一次直线。

公开(公告)号：US07493353B2

公开(公告)日：2009-02-17

申请号：US10781819

申请日：2004-02-20

Applicant: Michihito Ueda ,  Kiyoyuki Morita

Inventor： Michihito Ueda ,  Kiyoyuki Morita

IPC: G06J1/00 ,  G06G7/00

CPC classification number: G06N7/005

Abstract: A stochastic processor of the present invention includes a fluctuation generator configured to output an analog quantity having a fluctuation, a fluctuation difference calculation means configured to output fluctuation difference data with an output of the fluctuation generator added to analog difference between two data, a thresholding unit configured to perform thresholding on an output of the fluctuation difference calculation means to thereby generate a pulse, and a pulse detection means configured to detect the pulse output from the thresholding unit.

Abstract translation: 本发明的随机处理器包括：波动发生器，被配置为输出具有波动的模拟量;波动差计算装置，被配置为输出波动差分数据，其中波动发生器的输出相加于两个数据之间的模拟差值;阈值单元 被配置为对所述波动差计算装置的输出执行阈值处理，从而生成脉冲;以及脉冲检测装置，被配置为检测从所述阈值单元输出的脉冲。