Invention Grant
US06541278B2 Method of forming film for semiconductor device with supercritical fluid
失效
用超临界流体形成半导体器件薄膜的方法
- Patent Title: Method of forming film for semiconductor device with supercritical fluid
- Patent Title (中): 用超临界流体形成半导体器件薄膜的方法
-
Application No.: US09492350Application Date: 2000-01-27
-
Publication No.: US06541278B2Publication Date: 2003-04-01
- Inventor: Kiyoyuki Morita , Takashi Ohtsuka , Michihito Ueda
- Applicant: Kiyoyuki Morita , Takashi Ohtsuka , Michihito Ueda
- Priority: JP11-018597 19990127; JP11-104873 19990413
- Main IPC: C23C1606
- IPC: C23C1606

Abstract:
A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.
Public/Granted literature
Information query