公开(公告)号：US06724059B2

公开(公告)日：2004-04-20

申请号：US09980873

申请日：2001-12-06

Applicant: Toshiaki Fukunaka

Inventor： Toshiaki Fukunaka

IPC: H01L4300

CPC classification number: G01R33/09

Abstract: The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test nondestructively. The magnetoelectric transducer has a semiconductor device provided on the upper surface of a projecting portion of a projecting nonmagnetic insulating substrate 9 and comprising a magnetosensitive section 3 and inner electrodes 2 made of metal. A conductive resin layer 4 is formed on the internal electrodes 2 and on part of the side surfaces of the projecting portion. A strain buffering layer 5 is formed at least on the magnetosensitive section 3. Furthermore, at least the strain buffering layer 5 on the magnetosensitive section 3 is coated with a protective layer 6.

Abstract translation: 本发明提供一种具有基本上等于颗粒的投影尺寸并且能够非破坏性地进行检查测试的薄磁电换能器。 磁电换能器具有设置在突出非磁性绝缘基板9的突出部分的上表面上的半导体器件，其包括磁感应部分3和由金属制成的内部电极2。 在内部电极2和突出部分的侧面的一部分上形成导电树脂层4。 至少在磁敏部3上形成有应变缓冲层5.此外，至少在磁敏部3上的应变缓冲层5被覆有保护层6。

公开(公告)号：US06611035B2

公开(公告)日：2003-08-26

申请号：US09985760

申请日：2001-11-06

Applicant: Tetsuo Inoue

Inventor： Tetsuo Inoue

IPC: H01L4300

CPC classification number: H01F17/0006 ,  H01F41/043 ,  H01F41/046 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10T428/24926 ,  Y10T428/26 ,  H01L2924/00

Abstract: A ferrite magnetic film structure exhibiting a magnetic anisotropy, the ferrite magnetic film structure comprising, a substrate provided on one main surface thereof with a groove-like recessed portion and with a ridge-like projected portion located neighboring to the groove-like recessed portion, and a ferrite magnetic film constituted by a continuous film having a substantially flat upper surface and formed on one main surface of the substrate, wherein the ferrite magnetic film structure meets the following conditions: (a/(a+b))(h/(t−h))≧0.047 1≧(a+b) where “a” is a width of the ridge-like projected portion, b is a width of the groove-like recessed portion, h is a height of step between the groove-like recessed portion and the ridge-like projected portion, t is a thickness of the ferrite magnetic film at the recessed portion, and 1 is a length of the recessed portion and of the projected portion.

公开(公告)号：US06590268B2

公开(公告)日：2003-07-08

申请号：US09803571

申请日：2001-03-09

Applicant: Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

Inventor： Hideaki Adachi ,  Akihiro Odagawa ,  Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima

IPC: H01L4300

CPC classification number: G11C11/16

Abstract: A magnetic control device including an antiferromagnetic layer, a magnetic layer placed in contact with one side of the antiferromagnetic layer, and an electrode placed in contact with another side of the antiferromagnetic layer, wherein the direction of the magnetization of the magnetic layer is controlled by voltage applied between the magnetic layer and the electrode. In particular, when an additional magnetic layer is further laminated on the magnetic layer placed in contact with the antiferromagnetic layer via a non-magnetic layer, the direction of the magnetization of the controlled magnetic layer can be detected as a change in the electric resistance. Since such a magnetic control device, in principle, responds to the electric field or magnetic field, it forms a magnetic component capable of detecting an electric signal or a magnetic signal. In this case, the direction of the magnetization basically is maintained until the next signal is detected, so that such a device also can form an apparatus. Thus, a magnetic control device capable of controlling the magnetization with voltage and magnetic component and a memory apparatus using the same are provided.

Abstract translation: 一种磁控制装置，包括反铁磁层，与反铁磁层的一侧接触的磁性层和与反铁磁性层的另一侧接触的电极，其中磁性层的磁化方向由 施加在磁性层和电极之间的电压。 特别地，当通过非磁性层进一步层叠在与反铁磁性层接触的磁性层上的附加磁性层时，可以检测受控磁性层的磁化方向作为电阻的变化。 由于这种磁性控制装置原则上对电场或磁场进行响应，所以形成能够检测电信号或磁信号的磁性部件。 在这种情况下，磁化的方向基本上被维持直到检测到下一个信号，使得这样的装置也可以形成装置。 因此，提供了能够利用电压和磁性成分来控制磁化的磁控制装置和使用其的存储装置。

公开(公告)号：US06504469B1

公开(公告)日：2003-01-07

申请号：US09532467

申请日：2000-03-22

Applicant: Zdravko Ivanov ,  Tord Claeson ,  Radoslov Chakalov ,  Erland Wikborg

Inventor： Zdravko Ivanov ,  Tord Claeson ,  Radoslov Chakalov ,  Erland Wikborg

IPC: H01L4300

CPC classification number: H01L43/12 ,  H01F10/1933 ,  H01L43/08 ,  Y10T428/12958

Abstract: A magnetoresistive element, comprising a crystal structure with a grain boundary formed at a misorientation angle, and a method of producing a crystal structure having colossal magnetoresistance, wherein a grain boundary is formed at a misorientation angle. The crystal structure comprises a substrate layer and a CMR film layer epitaxially grown thereon, the CMR film layer having a plurality of first sections and a plurality of second sections with intermediate grain boundaries, the crystallographic axis of the first sections being different from the crystallographic axis of the second sections. The method comprises forming, on a base crystal material, a template comprising a first set of sections and a second set of sections with intermediate boundaries, the crystallographic axis of the first set being different from the crystallographic axis of the second set, and growing a film epitaxially on the base crystal material to form a plurality of grain boundaries over the boundaries between the first set and the second set.

Abstract translation: 一种磁阻元件，包括具有以取向角取向的晶界的晶体结构，以及制造具有巨大磁阻的晶体结构的方法，其中晶界以取向角形成。 晶体结构包括衬底层和外延生长在其上的CMR膜层，CMR膜层具有多个第一部分和具有中间晶界的多个第二部分，第一部分的晶体轴不同于晶体轴 的第二部分。 该方法包括在基底晶体材料上形成包括第一组部分的模板和具有中间边界的第二组截面，所述第一组的晶体轴与第二组的晶体轴不同，并且生长a 外延在基底晶体材料上以在第一组和第二组之间的边界上形成多个晶界。

公开(公告)号：US06462641B1

公开(公告)日：2002-10-08

申请号：US09601722

申请日：2000-10-23

Applicant: Bernard Dieny ,  Laurence Giacomoni ,  Anatoly Vedyaev

Inventor： Bernard Dieny ,  Laurence Giacomoni ,  Anatoly Vedyaev

IPC: H01L4300

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996

Abstract: Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer (12) of free magnetisation magnetic material, a “barrier” layer (16), composed of an electrically insulating material, and a second layer (14) of trapped magnetisation magnetic material, According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm. The invention may be particularly applied to the manufacture of magnetic data read heads.

Abstract translation: 隧道效应磁阻包括以堆叠的形式：自由磁化磁性材料的第一层（12），由电绝缘材料构成的“阻挡”层（16）和被俘获的磁化磁体的第二层（14） 材料根据本发明，磁性材料的第一层（12）的厚度小于10nm。本发明可以特别地应用于磁数据读取头的制造。

公开(公告)号：US06734513B2

公开(公告)日：2004-05-11

申请号：US09999250

申请日：2001-11-01

Applicant: Tomonori Seki ,  Tomonari Kogure

Inventor： Tomonori Seki ,  Tomonari Kogure

IPC: H01L4300

CPC classification number: B81C1/00269 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

Abstract: In one embodiment, a semiconductor device having single or multi-layer intermediate layers that easily adhere to a glass frit and lead lines of respective interconnections is disclosed. In general, the single or multi-layer intermediate layers are formed on at least the top surfaces of portions of the respective lead lines on which the glass frit is placed.

Abstract translation: 在一个实施例中，公开了一种半导体器件，其具有易于粘附到玻璃料的单层或多层中间层以及相应互连的引线。 通常，单层或多层中间层形成在其上放置玻璃料的相应导线的部分的至少顶表面上。

公开(公告)号：US06576969B2

公开(公告)日：2003-06-10

申请号：US09963171

申请日：2001-09-25

Applicant: Lung T. Tran ,  Manish Sharma

Inventor： Lung T. Tran ,  Manish Sharma

IPC: H01L4300

CPC classification number: G11C11/16

Abstract: A magneto-resistive device includes first and second ferromagnetic layers having different coercivities, and a spacer layer between the first and second layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions.

公开(公告)号：US06573713B2

公开(公告)日：2003-06-03

申请号：US10107533

申请日：2002-03-25

Applicant: E. James Torok ,  Richard Spitzer

Inventor： E. James Torok ,  Richard Spitzer

IPC: H01L4300

CPC classification number: H01F10/3281 ,  B82Y25/00 ,  G11C11/16 ,  H01L27/0207 ,  H01L27/118 ,  H01L27/11803 ,  H01L27/11898

Abstract: A transpinnor switch is described having a network of thin-film elements in a bridge configuration, selected ones of the thin-film elements exhibiting giant magnetoresistance. The switch also includes at least one input conductor inductively coupled to a first subset of the selected thin-film elements, and a switch conductor inductively coupled to a second subset of the selected thin-film elements for applying magnetic fields thereto. The switch is configurable using the switch conductor to generate an output signal representative of an input signal on the input conductor. The switch is also configurable using the switch conductor to generate substantially no output signal regardless of whether the input signal is present. The transpinnor switch described herein may be used in a wide variety of applications including, for example, a field programmable gate array.

公开(公告)号：US06555889B2

公开(公告)日：2003-04-29

申请号：US10038083

申请日：2002-01-03

Applicant: Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima ,  Hideaki Adachi ,  Akihiro Odagawa

Inventor： Masayoshi Hiramoto ,  Nozomu Matsukawa ,  Hiroshi Sakakima ,  Hideaki Adachi ,  Akihiro Odagawa

IPC: H01L4300

CPC classification number: B82Y25/00 ,  H01F10/3254 ,  H01L43/12 ,  Y10T428/26

Abstract: A magnetoresistive device including a high-resistivity layer (13), a first magnetic layer (12) and a second magnetic layer (14), the first magnetic layer (12) and the second magnetic layer (14) being arranged so as to sandwich the high-resistivity layer (13), wherein the high-resistivity layer (13) is a barrier for passing tunneling electrons between the first magnetic layer (12) and the second magnetic layer (14), and contains at least one element LONC selected from oxygen, nitrogen and carbon; at least one layer A selected from the first magnetic layer (12) and the second magnetic layer (14) contains at least one metal element M selected from Fe, Ni and Co, and an element RCP different from the metal element M; and the element RCP combines with the element LONC more easily in terms of energy than the metal element M. Accordingly, a novel magnetoresistive device having a low junction resistance and a high MR can be obtained.

Abstract translation: 一种磁电阻器件，包括高电阻率层（13），第一磁性层（12）和第二磁性层（14），第一磁性层（12）和第二磁性层（14） 所述高电阻率层（13），其中所述高电阻率层（13）是用于在所述第一磁性层（12）和所述第二磁性层（14）之间穿过隧道电子的势垒，并且包含至少一个选择的元素LONC 来自氧，氮和碳; 选自第一磁性层（12）和第二磁性层（14）的至少一层A含有至少一种选自Fe，Ni和Co的金属元素M和与金属元素M不同的元素RCP; 并且元件RCP在能量方面比金属元件M更容易地与元件LONC组合。因此，可以获得具有低结电阻和高MR的新型磁阻器件。

公开(公告)号：US06424018B1

公开(公告)日：2002-07-23

申请号：US09555361

申请日：2000-05-30

Applicant: Koji Ohtsuka

Inventor： Koji Ohtsuka

IPC: H01L4300

CPC classification number: H01L27/22 ,  G01R15/202 ,  G01R33/07

Abstract: A first and a second Hall element (2 and 3) for current detection, in addition to a semiconductor element (4) for an electric circuit, are provided on a semiconductor substrate. A conductor layer (5), through which flows the current of the semiconductor element (4), is formed on an insulating film (20) on the surface of the semiconductor substrate. The conductor layer (5) is arranged along the first and second Hall elements (2 and 3) for higher sensitivity. The magnetic flux created by the flow of a current through the conductor layer (5) is applied to the first and second Hall elements (2 and 3). The first and second Hall voltages obtained from the first and second Hall elements (2 and 3) are totaled for higher sensitivity.

Abstract translation: 除了用于电路的半导体元件（4）之外，用于电流检测的第一和第二霍尔元件（2和3）设置在半导体衬底上。 在半导体衬底的表面上的绝缘膜（20）上形成有流过半导体元件（4）的电流的导体层（5）。 导体层（5）沿着第一和第二霍尔元件（2和3）布置以获得更高的灵敏度。 通过导体层（5）的电流流动产生的磁通量被施加到第一和第二霍尔元件（2和3）。 从第一和第二霍尔元件（2和3）获得的第一和第二霍尔电压被合计以获得更高的灵敏度。