公开(公告)号：US4874438A

公开(公告)日：1989-10-17

申请号：US138192

申请日：1987-11-30

Applicant: Masahide Oshita ,  Masaaki Isai ,  Toshiaki Fukunaka

Inventor： Masahide Oshita ,  Masaaki Isai ,  Toshiaki Fukunaka

IPC: H01L21/203 ,  H01L43/12 ,  H01L43/14

CPC classification number: H01L43/12 ,  H01L21/0242 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02661 ,  H01L43/14 ,  Y10S148/005 ,  Y10S148/065 ,  Y10S148/169 ,  Y10S438/971

Abstract: An intermetallic compound semiconductor thin film comprises a single crystalline deposition thin film made of a III-V group intermetallic compound having a stoichiometry composition ratio of 1:1. When forming the III-V group semiconductor thin film by an evaporation method, a substrate temperature is initially maintained at a high level while the evaporation source temperature is gradually raised, and when the intermetallic composition of the III-V group begins to deposit on the substrate, the substrate temperature is lowered while the evaporation source temperature is maintained at the same level as existed at the time when the intermetallic compound is deposited, and the deposition time is controlled.

Abstract translation: PCT No.PCT / JP87 / 00205 Sec。 371日期1987年11月30日 102（e）1987年11月30日PCT 1987年4月1日提交PCT。金属间化合物半导体薄膜包括由化学计量组成比为1:1的III-V族金属间化合物制成的单晶沉积薄膜。 当通过蒸发法形成III-V族半导体薄膜时，基板温度最初保持在高水平，同时蒸发源温度逐渐升高，并且当III-V族金属间化合物开始沉积在 衬底时，衬底温度降低，同时蒸发源温度保持在金属间化合物沉积时存在的相同水平，并且控制沉积时间。

公开(公告)号：US20050086794A1

公开(公告)日：2005-04-28

申请号：US10965952

申请日：2004-10-18

Applicant: Toshiaki Fukunaka ,  Atsushi Yamamoto

Inventor： Toshiaki Fukunaka ,  Atsushi Yamamoto

IPC: G01R33/07 ,  H01L43/04 ,  H01L43/14 ,  H04R31/00 ,  G11B5/127

CPC classification number: G01R33/07 ,  H01L43/04 ,  H01L43/14 ,  H01L2224/97 ,  Y10T29/49021

Abstract: A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, and includes bottom surface connecting electrodes whose leads have a first thickness, and side electrodes which are exposed by dicing and have the first thickness. Amore sensitive Hall element has a high-permeability magnetic substrate as the substrate, and includes the bottom surface connecting electrodes whose leads have the first thickness, and the side electrodes exposed by the dicing and having the first thickness. The bottom surface connecting electrodes of the leads with the first thickness are formed across the internal electrodes of adjacent magnetoelectric transducers with maintaining the first thickness. The side electrodes with the first thickness are formed by cutting the center between the adjacent magnetoelectric transducers.

Abstract translation: 提供了一种超薄磁电换能器及其制造方法，其能够非破坏性地检查安装质量，并且可以减少占地面积。 磁电换能器具有由非磁性基板构成的基板，并且包括引线具有第一厚度的底表面连接电极和通过切割而暴露并具有第一厚度的侧电极。 不敏感的霍尔元件具有高磁导率磁性基板作为基板，并且包括具有第一厚度的引线具有的底表面连接电极和通过切割而暴露并具有第一厚度的侧电极。 具有第一厚度的引线的底表面连接电极跨越相邻磁电换能器的内部电极，并保持第一厚度。 具有第一厚度的侧电极通过切割相邻磁电换能器之间的中心而形成。

公开(公告)号：US06724059B2

公开(公告)日：2004-04-20

申请号：US09980873

申请日：2001-12-06

Applicant: Toshiaki Fukunaka

Inventor： Toshiaki Fukunaka

IPC: H01L4300

CPC classification number: G01R33/09

Abstract: The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test nondestructively. The magnetoelectric transducer has a semiconductor device provided on the upper surface of a projecting portion of a projecting nonmagnetic insulating substrate 9 and comprising a magnetosensitive section 3 and inner electrodes 2 made of metal. A conductive resin layer 4 is formed on the internal electrodes 2 and on part of the side surfaces of the projecting portion. A strain buffering layer 5 is formed at least on the magnetosensitive section 3. Furthermore, at least the strain buffering layer 5 on the magnetosensitive section 3 is coated with a protective layer 6.

Abstract translation: 本发明提供一种具有基本上等于颗粒的投影尺寸并且能够非破坏性地进行检查测试的薄磁电换能器。 磁电换能器具有设置在突出非磁性绝缘基板9的突出部分的上表面上的半导体器件，其包括磁感应部分3和由金属制成的内部电极2。 在内部电极2和突出部分的侧面的一部分上形成导电树脂层4。 至少在磁敏部3上形成有应变缓冲层5.此外，至少在磁敏部3上的应变缓冲层5被覆有保护层6。

公开(公告)号：US07193288B2

公开(公告)日：2007-03-20

申请号：US10965952

申请日：2004-10-18

Applicant: Toshiaki Fukunaka ,  Atsushi Yamamoto

Inventor： Toshiaki Fukunaka ,  Atsushi Yamamoto

IPC: H01L29/82 ,  H01L43/00

CPC classification number: G01R33/07 ,  H01L43/04 ,  H01L43/14 ,  H01L2224/97 ,  Y10T29/49021

Abstract: A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, and includes bottom surface connecting electrodes whose leads have a first thickness, and side electrodes which are exposed by dicing and have the first thickness. A more sensitive Hall element has a high-permeability magnetic substrate as the substrate, and includes the bottom surface connecting electrodes whose leads have the first thickness, and the side electrodes exposed by the dicing and having the first thickness. The bottom surface connecting electrodes of the leads with the first thickness are formed across the internal electrodes of adjacent magnetoelectric transducers with maintaining the first thickness. The side electrodes with the first thickness are formed by cutting the center between the adjacent magnetoelectric transducers.

Abstract translation: 提供了一种超薄磁电换能器及其制造方法，其能够非破坏性地检查安装质量，并且可以减少占地面积。 磁电换能器具有由非磁性基板构成的基板，并且包括引线具有第一厚度的底表面连接电极和通过切割而暴露并具有第一厚度的侧电极。 更敏感的霍尔元件具有高磁导率磁性基板作为基板，并且包括具有第一厚度的引线具有的底表面连接电极和通过切割而暴露并具有第一厚度的侧电极。 具有第一厚度的引线的底表面连接电极跨越相邻磁电换能器的内部电极，并保持第一厚度。 具有第一厚度的侧电极通过切割相邻磁电换能器之间的中心而形成。

公开(公告)号：USD597428S1

公开(公告)日：2009-08-04

申请号：US29287806

申请日：2007-09-21

Applicant: Masayuki Sato ,  Toshiaki Fukunaka

Designer： Masayuki Sato ,  Toshiaki Fukunaka