Abstract:
To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA).
Abstract:
An insulating resin sheet made from a thermosetting resin is provided on an insulating substrate in such a manner as to cover bonding pads provided on the insulating substrate. A lower chip is set on the insulating substrate in such a manner that bonding bumps connected to inner connection terminals of the lower chip break the insulating resin sheet 24 to be in contact with the bonding pads. The insulating resin sheet is thermally cured and subsequently the bonding bumps are melted.
Abstract:
A lead frame includes a die pad for mounting thereon a semiconductor chip having a plurality of electrodes, a plurality of leads for electrical connection with the plurality of electrodes of the semiconductor chip, an outer frame disposed on the periphery of the die pad for supporting the die pad and the plurality of leads, and a resin guide portion extending to the vicinity of the die pad from the outer frame for guiding a molten resin over and under the semiconductor chip during resin packaging. A semiconductor device manufacturing method includes mounting a semiconductor chip having electrodes on a substrate having a resin guiding portion for guiding a resin over and under the semiconductor chip during resin packaging; electrically connecting leads on the substrate to the electrodes positioning the semiconductor chip and the substrate between a pair of mold halves injecting a molten resin into the mold and solidifying the resin.
Abstract:
Reliability of a semiconductor device is improved. In a flatness inspection of BGA (semiconductor device), there is formed a flatness standard where a permissible range in the direction of (+) of flatness at normal temperature is smaller than a permissible range in the direction of (−). With use of the above flatness standard, a flatness inspection of the semiconductor device at normal temperature is performed to determine whether the mounted item is non-defective or defective. With the above process, defective mounting caused by a package warp when heated during reflow soldering etc. is reduced and reliability of BGA is improved. At the same time, flatness management of a substrate-type semiconductor device with better consideration of a mounting state can be performed.
Abstract:
Reliability of a semiconductor device is improved. In a flatness inspection of BGA (semiconductor device), there is formed a flatness standard where a permissible range in the direction of (+) of flatness at normal temperature is smaller than a permissible range in the direction of (−). With use of the above flatness standard, a flatness inspection of the semiconductor device at normal temperature is performed to determine whether the mounted item is non-defective or defective. With the above process, defective mounting caused by a package warp when heated during reflow soldering etc. is reduced and reliability of BGA is improved. At the same time, flatness management of a substrate-type semiconductor device with better consideration of a mounting state can be performed.
Abstract:
To provide a technology capable of preventing the deterioration of the reliability of semiconductor devices caused by the gasification of a part of components of the material constituting a wiring substrate.A wiring layer constituting a circuit pattern is formed over each of the front and rear surfaces of a glass epoxy substrate, and after the formation of a solder resist covering the wiring layer while exposing a part of the wiring layer and prior to a heat treatment (first heat treatment) at 100° C. to 150° C. for dehumidification, a heat treatment (second heat treatment) at 160° C. to 230° C. for gasifying and discharging an organic solvent contained in the material constituting a wiring substrate is performed for the wiring substrate.
Abstract:
The reliability of a semiconductor device is improved. A sealing resin (sealed body) is formed between a sub-substrate (first base member) and a base substrate (second base member) that are provided individually and distinctly to be integrated therewith, and then, the sub-substrate is electrically coupled to the second base member. As a means for electrically coupling the sub-substrate to the base substrate, lands (first lands) formed on the sub-substrate and lands (second lands) formed on the base substrate are disposed such that the respective positions thereof are aligned. After through holes are formed from the lands of the sub-substrate toward the lands of the base substrate, a solder member (conductive member) is formed in each of the through holes.
Abstract:
In a semiconductor device, a semiconductor element is bonded to an insulating circuit board. A resin layer for bonding the semiconductor element to the insulating circuit board is extended so as to become greater in size than the semiconductor element. Further, the surroundings of the semiconductor element are sealed with resin. Reliability of mounting is improved by alleviating stress developing in a solder joint of the external electrodes of the circuit board.
Abstract:
The invention is intended for rendering a CMOS camera compact and less costly. A semiconductor device constituting a CMOS camera system includes a lens unit which includes a wiring board having an image pick-up opening formed therein and a lens, and the lens is provided on one side of the wiring board and positioned opposite the image pick-up opening. An image pick-up semiconductor is provided on the other side of the wiring board, and is positioned opposite the image pick-up opening, and is connected to a connection section of the wiring board by means of flip-chip bonding. An image processing semiconductor is connected by means of flip-chip bonding to another connection section provided on the other side of the wiring board, and processes an image signal output from the image pick-up semiconductor.
Abstract:
A plurality of semiconductor chips are mounted on an insulating substrate with bumps and through use of dielectric resin for mounting purposes. The semiconductor chips are sealed with transfer mold resin through a single operation while remaining on the insulating substrate. Then, the plurality of semiconductor chips are separated together with the insulating substrate and the mounting resin into individual semiconductor devices. The productivity and reliability of packaged semiconductor devices is improved.