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    Noble metal activation layer
    2.
    发明授权
    Noble metal activation layer 失效
    贵金属活化层

    公开(公告)号：US08278215B2

    公开(公告)日：2012-10-02

    申请号：US13098926

    申请日：2011-05-02

    Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    IPC: H01L21/44

    CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

    Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

    Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。

    Noble Metal Activation Layer
    3.
    发明申请
    Noble Metal Activation Layer 失效
    贵金属激活层

    公开(公告)号：US20110207320A1

    公开(公告)日：2011-08-25

    申请号：US13098926

    申请日：2011-05-02

    Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    IPC: H01L21/768

    CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

    Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials

    Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料

    Noble metal activation layer
    4.
    发明授权
    Noble metal activation layer 有权
    贵金属活化层

    公开(公告)号：US07968462B1

    公开(公告)日：2011-06-28

    申请号：US12267298

    申请日：2008-11-07

    Applicant: Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    Inventor： Zhi-Wen Sun ,  Bob Kong ,  Igor Ivanov ,  Tony Chiang

    IPC: H01L21/44

    CPC classification number: H01L21/76814 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76879 ,  H01L31/022425 ,  H01L31/18 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  Y02E10/50

    Abstract: Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

    Abstract translation: 描述了当使用硅化镍（NiSi）和其他类似的接触材料时使接触电阻最小化的方法。 这些方法包括优化硅化物表面清洗，硅化物表面钝化与氧化以及用于扩散阻挡层/催化剂层沉积的技术。 另外，描述了能够在NiSi基接触材料上产生无电极阻挡层沉积的贵金属（例如铂，铱，铼，钌及其合金）活化层的方法。 当在其它最终产品中使用NiSi基材料时，可以采用这些方法。 该方法可以用于硅基材料。

    Spatially-arranged chemical processing station
    6.
    发明申请
    Spatially-arranged chemical processing station 审中-公开
    空间化学处理站

    公开(公告)号：US20070051306A1

    公开(公告)日：2007-03-08

    申请号：US11217750

    申请日：2005-09-01

    Applicant: Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

    Inventor： Igor Ivanov ,  Chiu Ting ,  Jonathan Zhang

    IPC: B05C13/02 ,  B05B15/12 ,  B05B3/00 ,  B05C5/00

    CPC classification number: H01L21/67173 ,  H01L21/67017 ,  H01L21/67178 ,  H01L21/67769

    Abstract: The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

    Abstract translation: 本发明公开了一种站，例如用于具有柔性配置的IC制造。 它由一系列处理室组成，它们分组成处理模块，并以垂直水平和水平行的二维方式布置，并且能够彼此独立运行。 每个处理室可以在具有多于一种处理流体的晶片上顺序地进行无电沉积和其它相关处理步骤，而不必将其从室中移除。 该系统由单个通用工业机器人服务，其可以随机访问存储单元的所有工作室和单元，以在晶片盒之间传送晶片和任何化学处理室的入口/出口端口。 车站占用服务室的空间和洁净室的空间。 连接到本地化学品供应单元的处理模块和主要化学品管理单元占用服务室的空间，而机器人和晶片存储盒位于洁净室中。 因此，与已知的集群工具机器不同，本发明的工作站使得可以将部分单元从昂贵的清洁室区域转移到不太昂贵的服务区域。

    Methods and systems for processing a microelectronic topography
    8.
    发明申请
    Methods and systems for processing a microelectronic topography 有权

    公开(公告)号：US20050181134A1

    公开(公告)日：2005-08-18

    申请号：US11102143

    申请日：2005-04-08

    Applicant: Igor Ivanov ,  Weiguo Zhang

    Inventor： Igor Ivanov ,  Weiguo Zhang

    IPC: H01L21/00 ,  H01L21/687 ,  B05D3/04

    CPC classification number: H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

    Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

    Non-volatile resistive-switching memories formed using anodization
    9.
    发明授权
    Non-volatile resistive-switching memories formed using anodization 有权
    使用阳极氧化形成的非易失性电阻式开关存储器

    公开(公告)号：US08318534B2

    公开(公告)日：2012-11-27

    申请号：US13098632

    申请日：2011-05-02

    Applicant: Alexander Gorer ,  Prashant Phatak ,  Tony Chiang ,  Igor Ivanov

    Inventor： Alexander Gorer ,  Prashant Phatak ,  Tony Chiang ,  Igor Ivanov

    IPC: H01L21/00

    CPC classification number: H01L45/10 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1633

    Abstract: Non-volatile resistive-switching memories formed using anodization are described. A method for forming a resistive-switching memory element using anodization includes forming a metal containing layer, anodizing the metal containing layer at least partially to form a resistive switching metal oxide, and forming a first electrode over the resistive switching metal oxide. In some examples, an unanodized portion of the metal containing layer may be a second electrode of the memory element.

    Abstract translation: 描述了使用阳极氧化形成的非易失性电阻式开关存储器。 一种使用阳极氧化形成电阻式开关存储元件的方法包括形成含金属层，至少部分地阳极氧化含金属层以形成电阻式开关金属氧化物，以及在电阻式开关金属氧化物上形成第一电极。 在一些实例中，含金属层的未渐变部分可以是存储元件的第二电极。

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