公开(公告)号：US09305791B2

公开(公告)日：2016-04-05

申请号：US14135505

申请日：2013-12-19

申请人： Intermolecular, Inc.

发明人： Imran Hashim

IPC分类号： H01L21/8234 ,  H01L21/30 ,  B08B3/04 ,  G11C13/00 ,  H01L27/24 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  H01L21/02 ,  H01L21/66 ,  H01L45/00 ,  H01L21/306 ,  H01L21/67 ,  C23C18/16 ,  C25D17/02 ,  B01J19/00

CPC分类号： H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

摘要： Combinatorial workflow is provided for evaluating materials and processes for current selector devices in a cross point memory array. Blanket layers, metal-insulator-metal devices, and compete memory structures are combinatorially fabricated on multiple regions of a substrate, with each region having a different material and process condition for the current selector devices. The current selector devices are then characterized, and the data are compared to obtain the optimum materials and processes.

摘要翻译： 组合工作流程用于评估交叉点存储器阵列中当前选择器设备的材料和过程。 毯子层，金属 - 绝缘体 - 金属器件和竞争存储器结构组合地制造在衬底的多个区域上，每个区域对于当前选择器器件具有不同的材料和工艺条件。 然后对当前的选择器装置进行表征，并比较数据以获得最佳材料和工艺。

公开(公告)号：US09293364B2

公开(公告)日：2016-03-22

申请号：US13677388

申请日：2012-11-15

申请人： EBARA CORPORATION ,  Dainippon Screen Mfg. Co., Ltd.

发明人： Hiroyuki Kanda ,  Junichiro Tsujino ,  Junko Mine ,  Makoto Kubota ,  Tsutomu Nakada ,  Kenichiro Arai

IPC分类号： H01L21/768 ,  C23C18/16 ,  H01L23/00 ,  C23C18/32 ,  C23C18/54

CPC分类号： C23C18/163 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/1642 ,  C23C18/1651 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1683 ,  C23C18/32 ,  C23C18/54 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/11464 ,  H01L2224/742 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

摘要： There is provided an electroless plating apparatus which, despite using a high-productivity batch processing method, can reduce the amount of a liquid chemical brought out of a processing tank, thereby reducing the cleaning time in a cleaning step, and can perform flushing easily and quickly. The electroless plating apparatus includes a pre-plating treatment module including a pre-plating treatment tank, a plating module, and an inter-module substrate transport device. The pre-plating treatment tank is provided with a pre-plating treatment solution circulation line having a temperature control function for a pre-plating treatment solution. The plating tank is provided with a plating solution circulation line having a filter and a temperature control function for a plating solution. The plating solution circulation line is connected to a flushing line for flushing the interior of the plating solution circulation line and the interior of the plating tank.

摘要翻译： 提供了一种化学镀设备，尽管使用高生产率批量处理方法，但是可以减少从处理槽中排出的液体化学物质的量，从而减少清洁步骤中的清洁时间，并且可以容易地进行冲洗， 很快。 无电解电镀装置包括预镀处理模块，其包括预镀处理槽，镀覆模块和模块间基板输送装置。 预镀处理槽设置有预镀处理液循环管线，其具有用于预镀处理溶液的温度控制功能。 电镀槽具有电镀液循环管线，其具有用于电镀液的过滤器和温度控制功能。 电镀液循环管线连接到用于冲洗电镀液循环管线内部和镀槽内部的冲洗管线。

公开(公告)号：US20140262028A1

公开(公告)日：2014-09-18

申请号：US14013281

申请日：2013-08-29

申请人： Intermolecular, Inc.

发明人： Rajesh Kelekar

IPC分类号： B05C9/00 ,  C25D21/12 ,  B08B3/04

CPC分类号： H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

摘要： An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed.

摘要翻译： 用于湿处理基底的开底反应器电池可以被配置为将处理液体限制在细胞下方的区域（处理“内部位点”），或者替代地从细胞下方的大部分区域排除处理液体 处理“外部位置”），而不会在电池和基板之间产生物理接触。 在电池的主腔内保持的轻微的负压或超压导致液体在电池和衬底之间的窄间隙中形成弯液面，而不是流过所需工艺区域外面。 在电池的主腔外部的周边通道下方的区域由内部位置和外部两者共享，从而允许整个衬底被处理。

公开(公告)号：US08622017B2

公开(公告)日：2014-01-07

申请号：US13111859

申请日：2011-05-19

申请人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

发明人： Igor Ivanov ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Ron Rulkens

IPC分类号： B05C5/02

CPC分类号： C23C18/1683 ,  C23C18/1628 ,  C23C18/1682

摘要： An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.

摘要翻译： 无电解电镀系统包括电镀液，并且控制电镀液中的还原剂，用于沉积超过约五百纳米并隔离大约一千纳米的离子值特征。

公开(公告)号：US20130122704A1

公开(公告)日：2013-05-16

申请号：US13677388

申请日：2012-11-15

申请人： EBARA CORPORATION ,  Dainippon Screen Mfg. Co., Ltd.

发明人： Hiroyuki KANDA ,  Junichiro TSUJINO ,  Junko MINE ,  Makoto KUBOTA ,  Tsutomu NAKADA ,  Kenichiro ARAI

IPC分类号： H01L21/768

CPC分类号： C23C18/163 ,  C23C18/1628 ,  C23C18/1632 ,  C23C18/1642 ,  C23C18/1651 ,  C23C18/1669 ,  C23C18/1675 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1683 ,  C23C18/32 ,  C23C18/54 ,  H01L21/76838 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/11464 ,  H01L2224/742 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

摘要： There is provided an electroless plating apparatus which, despite using a high-productivity batch processing method, can reduce the amount of a liquid chemical brought out of a processing tank, thereby reducing the cleaning time in a cleaning step, and can perform flushing easily and quickly. The electroless plating apparatus includes a pre-plating treatment module including a pre-plating treatment tank, a plating module, and an inter-module substrate transport device. The pre-plating treatment tank is provided with a pre-plating treatment solution circulation line having a temperature control function for a pre-plating treatment solution. The plating tank is provided with a plating solution circulation line having a filter and a temperature control function for a plating solution. The plating solution circulation line is connected to a flushing line for flushing the interior of the plating solution circulation line and the interior of the plating tank.

摘要翻译： 提供了一种化学镀设备，尽管使用高生产率批量处理方法，但是可以减少从处理槽中排出的液体化学物质的量，从而减少清洁步骤中的清洁时间，并且可以容易地进行冲洗， 很快。 无电解电镀装置包括预镀处理模块，其包括预镀处理槽，镀覆模块和模块间基板输送装置。 预镀处理槽设置有预镀处理液循环管线，其具有用于预镀处理溶液的温度控制功能。 电镀槽具有电镀液循环管线，其具有用于电镀液的过滤器和温度控制功能。 电镀液循环管线连接到用于冲洗电镀液循环管线内部和镀槽内部的冲洗管线。

公开(公告)号：US20110117328A1

公开(公告)日：2011-05-19

申请号：US13013187

申请日：2011-01-25

申请人： Igor C. Ivanov

发明人： Igor C. Ivanov

IPC分类号： B32B3/00

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

摘要翻译： 微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。 另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。 一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。 另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。

公开(公告)号：US20110020550A1

公开(公告)日：2011-01-27

申请号：US12921912

申请日：2009-03-12

申请人： Hironori Ota ,  Atsushi Yusa ,  Satoshi Yamamoto

发明人： Hironori Ota ,  Atsushi Yusa ,  Satoshi Yamamoto

IPC分类号： C23C18/28 ,  C23C18/54 ,  C23C18/31

CPC分类号： C23C18/30 ,  C08J7/06 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/2073 ,  C23C18/31

摘要： The present invention provides a method for allowing a metal complex to stably penetrate into a polymer and immobilizing the metal complex in the polymer by a low temperature treatment, in a batch processing for a plating pre-treatment wherein the metal complex is allowed to penetrate into the polymer with the use of high-pressure carbon dioxide. In particular, the present invention provides a method for producing a composite material containing a resin molded product, characterized in that a reducing agent is brought into contact with the resin molded product so as to allow the reducing agent to penetrate into the resin molded product, and in that high-pressure carbon dioxide having an organic metal complex dissolved therein is brought into contact with the resin molded product into which said reducing agent has penetrated, so as to immobilize the organic metal complex in the resin molded product by the reducing agent.

摘要翻译： 本发明提供一种允许金属络合物稳定地渗透到聚合物中并通过低温处理将金属络合物固定在聚合物中的方法，其中允许金属络合物渗入的电镀预处理的间歇式处理 该聚合物使用高压二氧化碳。 特别地，本发明提供一种含有树脂成型体的复合材料的制造方法，其特征在于，与所述树脂成形体接触还原剂，使所述还原剂渗透到所述树脂成形体中， 并且将其中溶解有有机金属配合物的高压二氧化碳与所述还原剂渗入的树脂成型体接触，从而通过还原剂将有机金属配合物固定在树脂成型体中。

公开(公告)号：US20100092661A1

公开(公告)日：2010-04-15

申请号：US12447013

申请日：2007-10-24

申请人： Tetsuya Shimizu ,  Hisayoshi Tajima ,  Seizo Miyata ,  Masato Sone

发明人： Tetsuya Shimizu ,  Hisayoshi Tajima ,  Seizo Miyata ,  Masato Sone

IPC分类号： B05D1/12

CPC分类号： C23C18/00 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/31 ,  H01L21/288 ,  H01L21/76877

摘要： This invention provides an electroless plating method comprising electrolessly plating the surface of a metal base sample using a supercritical fluid or a subcritical fluid in such a state that a metal powder is dispersed in an electroless plating liquid. According to this method, a homogeneous and thick plating layer is formed in a short time by taking advantage of an induction eutectoid phenomenon. In the electroless plating method, the metal powder may have an average particle diameter of not less than 1 nm and not more than 100 &mgr;m, and the electroless plating method may also be applied to a damascene process or a dual damascene process which is a method for forming a fine metal wiring within a semiconductor element. The above constitution can provide an electroless plating method which can realize the formation of an even film by electroless plating in a short time using a subcritical fluid or a supercritical fluid by taking advantage of an induction eutectoid phenomenon.

摘要翻译： 本发明提供了一种化学镀方法，其包括使金属粉末分散在无电镀液中的状态，使用超临界流体或亚临界流体对金属基体样品的表面进行无电镀。 根据该方法，通过利用感应共析现象，在短时间内形成均匀且厚的镀层。 在化学镀方法中，金属粉末的平均粒径可以不小于1nm且不大于100μm，并且化学镀方法也可以应用于镶嵌工艺或双镶嵌工艺，其为 一种在半导体元件内形成精细金属布线的方法。 上述结构可以提供一种化学镀方法，其可以通过利用诱导共析现象利用亚临界流体或超临界流体在短时间内通过无电解电镀实现均匀的膜的形成。

公开(公告)号：US07341633B2

公开(公告)日：2008-03-11

申请号：US10965220

申请日：2004-10-14

申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Ian A. Pancham ,  Sergey Lopatin

IPC分类号： B05C3/09 ,  B05C13/02

CPC分类号： H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

摘要： Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.

摘要翻译： 本发明的实施例通常提供流体处理平台。 平台包括具有基板传送机器人的主机，主机上的至少一个基板清洁单元，以及至少一个处理机壳。 处理外壳包括定位成与处理外壳的内部流体连通的气体供应源，位于外壳中的第一流体处理单元，定位成支撑基板以在第一流体处理单元中进行处理的第一基板头组件，第二流体处理单元 位于外壳中的流体处理单元，定位成支撑用于在第二流体处理单元中进行处理的基板的第二头部组件，以及位于第一和第二流体处理单元之间的衬底梭，并且构造成将衬底在流体处理单元 和主机机器人。

公开(公告)号：US20060030157A1

公开(公告)日：2006-02-09

申请号：US11199657

申请日：2005-08-09

申请人： Igor Ivanov

发明人： Igor Ivanov

IPC分类号： B24B29/00 ,  H01L21/461

CPC分类号： H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

摘要： An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

摘要翻译： 提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。 该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。 使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。 旋转足以影响流体相对于微电子拓扑的表面的运动。 用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。