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    Dynamic rapid vapor deposition process for conformal silica laminates
    5.
    发明授权
    Dynamic rapid vapor deposition process for conformal silica laminates 有权
    用于保形二氧化硅层压板的动态快速蒸镀沉积工艺

    公开(公告)号：US07223707B1

    公开(公告)日：2007-05-29

    申请号：US11027480

    申请日：2004-12-30

    申请人： George D. Papasouliotis ,  Jeff Tobin ,  Ron Rulkens ,  Dennis M. Hausmann ,  Adrianne K. Tipton ,  Raihan M. Tarafdar ,  Bunsen Nie

    发明人： George D. Papasouliotis ,  Jeff Tobin ,  Ron Rulkens ,  Dennis M. Hausmann ,  Adrianne K. Tipton ,  Raihan M. Tarafdar ,  Bunsen Nie

    IPC分类号： H01L21/00

    CPC分类号： C23C16/45534 ,  C23C16/402 ,  C23C16/45529 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/3142 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/76837

    摘要： A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, reactor pressure and/or reactant partial pressure, as opposed to static process conditions through various cycles, can be used to minimize film roughness and improve gap fill performance and film properties via the elimination or reduction of seam occurrence. Overall film roughness can be reduced by operating the initial growth cycle under conditions which optimize film smoothness, and then switching to conditions that will enhance conformality, gap fill and film properties for the subsequent process cycles. Film deposition characteristics can be changed by modulating one or more of a number of process parameters including wafer temperature, reactor pressure, reactant partial pressure and combinations of these.

    摘要翻译： 在半导体制造中使用ALD和RVD技术来生产光滑的纳米层状电介质膜的方法，特别是用掺杂或未掺杂的石英玻璃填充结构的方法，使用动态工艺条件。 可以使用与通过各种循环的静态工艺条件相反的使用可变衬底（例如，晶片）温度，反应器压力和/或反应物分压的动态过程来最小化膜粗糙度，并通过消除来改善间隙填充性能和膜性质 或减少接缝发生。 通过在优化膜平滑性的条件下操作初始生长周期，然后转换到将增强后续工艺循环的共形性，间隙填充和膜性能的条件，可以降低总膜的粗糙度。 可以通过调制包括晶片温度，反应器压力，反应物分压以及它们的组合在内的多个工艺参数中的一个或多个来改变膜沉积特性。

    Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition
    8.
    发明授权
    Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition 有权
    通过快速气相沉积形成的保形二氧化硅纳米级氨基酸的性质控制方法

    公开(公告)号：US07297608B1

    公开(公告)日：2007-11-20

    申请号：US10874696

    申请日：2004-06-22

    申请人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

    发明人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76224 ,  H01L21/3141

    摘要： A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.

    摘要翻译： 使用原子层沉积快速气相沉积（RVD）的方法将介电材料共形沉积在基底表面的小特征上。 然后使用高密度等离子体（HDP）在氧化环境中在500℃以下的温度下对所得介电膜进行退火。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本饱和的含铝前体层; 将衬底表面暴露于含硅前体气体以形成电介质膜; 并在低温含氧高密度等离子体中退火电介质膜。 所得膜具有改善的机械性能，包括最小化的接缝，改进的WERR和低的本征应力，与高温退火工艺（〜800℃）相当，但不超过先进设备的热预算限制。

    Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer
    9.
    发明授权
    Silica thin films produced by rapid surface catalyzed vapor deposition (RVD) using a nucleation layer 有权
    使用成核层通过快速表面催化气相沉积（RVD）制备的二氧化硅薄膜

    公开(公告)号：US07202185B1

    公开(公告)日：2007-04-10

    申请号：US10875158

    申请日：2004-06-22

    申请人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

    发明人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/3141 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45534 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31612

    摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to an oxygen-containing gas to oxidize the layer of aluminum-containing precursor; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

    摘要翻译： 使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。 所得的电介质膜具有低的介电常数和高的表面平滑度。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成饱和的含铝前体的层; 将衬底表面暴露于含氧气体以氧化含铝前体层; 并将基板表面暴露于含硅前体气体以形成电介质膜。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

    PRECURSORS FOR SILICA OR METAL SILICATE FILMS
    10.
    发明申请
    PRECURSORS FOR SILICA OR METAL SILICATE FILMS 有权
    二氧化硅或金属硅酸盐膜的前身

    公开(公告)号：US20060127578A1

    公开(公告)日：2006-06-15

    申请号：US11008069

    申请日：2004-12-09

    申请人： Xinjian Lei ,  Ron Rulkens

    发明人： Xinjian Lei ,  Ron Rulkens

    IPC分类号： C07F7/08 ,  C23C16/00 ,  C23C16/06 ,  B05D3/02

    CPC分类号： C07F7/045 ,  C23C16/40

    摘要： A composition selected from the group consisting of bis(tert-butoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-butoxy)silanol, bis(tert-pentoxy)(isopropoxy)silanol, bis(isopropoxy)(tert-pentoxy)silanol, bis(tert-pentoxy)(tert-butoxy)silanol, bis(tert-butoxy)(tert-pentoxy)silanol and mixtures thereof; its use to form a metal or metalloid silicate layer on a substrate and the synthesis of the mixed alkoxysilanols.

    摘要翻译： 选自双（叔丁氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔丁氧基）硅烷醇，双（叔戊氧基）（异丙氧基）硅烷醇，双（异丙氧基）（叔戊氧基） 硅烷醇，双（叔戊氧基）（叔丁氧基）硅烷醇，双（叔丁氧基）（叔戊氧基）硅烷醇及其混合物; 其用于在基材上形成金属或准金属硅酸盐层和混合的烷氧基硅烷醇的合成。