公开(公告)号：US08728956B2

公开(公告)日：2014-05-20

申请号：US13084399

申请日：2011-04-11

申请人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

公开(公告)号：US07297608B1

公开(公告)日：2007-11-20

申请号：US10874696

申请日：2004-06-22

申请人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： George D. Papasouliotis ,  Raihan M. Tarafdar ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/76

CPC分类号： H01L21/76224 ,  H01L21/3141

摘要： A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film; and annealing the dielectric film in a low temperature oxygen-containing high density plasma. The resulting film has improved mechanical properties, including minimized seams, improved WERR, and low intrinsic stress, comparable to a high temperature annealing process (˜800° C.), but without exceeding the thermal budget limitations of advanced devices.

摘要翻译： 使用原子层沉积快速气相沉积（RVD）的方法将介电材料共形沉积在基底表面的小特征上。 然后使用高密度等离子体（HDP）在氧化环境中在500℃以下的温度下对所得介电膜进行退火。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本饱和的含铝前体层; 将衬底表面暴露于含硅前体气体以形成电介质膜; 并在低温含氧高密度等离子体中退火电介质膜。 所得膜具有改善的机械性能，包括最小化的接缝，改进的WERR和低的本征应力，与高温退火工艺（〜800℃）相当，但不超过先进设备的热预算限制。

公开(公告)号：US07202185B1

公开(公告)日：2007-04-10

申请号：US10875158

申请日：2004-06-22

申请人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： Dennis M. Hausmann ,  Jeff Tobin ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3141 ,  C23C16/0272 ,  C23C16/402 ,  C23C16/45525 ,  C23C16/45534 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31612

摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant and a high degree of surface smoothness. The method includes the following three principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to an oxygen-containing gas to oxidize the layer of aluminum-containing precursor; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。 所得的电介质膜具有低的介电常数和高的表面平滑度。 该方法包括以下三个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成饱和的含铝前体的层; 将衬底表面暴露于含氧气体以氧化含铝前体层; 并将基板表面暴露于含硅前体气体以形成电介质膜。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US06867152B1

公开(公告)日：2005-03-15

申请号：US10672309

申请日：2003-09-26

申请人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Patrick A. Van Cleemput ,  Bunsen Nie ,  Francisco J. Juarez ,  Teresa Pong

发明人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Patrick A. Van Cleemput ,  Bunsen Nie ,  Francisco J. Juarez ,  Teresa Pong

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45553 ,  C23C16/401 ,  C23C16/45534 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/76828 ,  H01L21/76837 ,  Y10S438/909 ,  Y10S438/935

摘要： A rapid vapor deposition (RVD) method conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film has a low dielectric constant, low wet etch rate, low film shrinkage and low stress hysteresis, appropriate for various integrated circuit dielectric gap fill applications such as shallow trench isolation. The method includes the following two principal operations: depositing a thin conformal and saturated layer of aluminum-containing precursor over some or all of the substrate surface; and exposing the saturated layer of aluminum-containing precursor to a silicon-containing precursor gas to form a dielectric layer. In some cases, the substrate temperatures during contact with silicon-containing precursor are greater than about 250 degree Celsius to produce an improved film. In other cases, post-deposition anneal process may be used to improve properties of the film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 快速蒸镀（RVD）方法在介质材料的小特征上共形沉积介电材料。 所得到的介电膜具有低介电常数，低湿蚀刻速率，低膜收缩率和低应力滞后，适用于各种集成电路电介质间隙填充应用，如浅沟槽隔离。 该方法包括以下两个主要操作：在部分或全部基材表面上沉积薄的共形和饱和的含铝前体层; 并将含铝前体的饱和层暴露于含硅前体气体中以形成电介质层。 在某些情况下，与含硅前体接触时的基板温度大于约250摄氏度以产生改进的膜。 在其他情况下，可以使用后沉积退火工艺来改善膜的性能。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US08637411B2

公开(公告)日：2014-01-28

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/469 ,  H01L21/31 ,  H01L21/311

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

公开(公告)号：US20120028454A1

公开(公告)日：2012-02-02

申请号：US13242084

申请日：2011-09-23

申请人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

发明人： Shankar Swaminathan ,  Jon Henri ,  Dennis M. Hausmann ,  Pramod Subramonium ,  Mandyam Sriram ,  Vishwanathan Rangarajan ,  Kirthi K. Kattige ,  Bart J. van Schravendijk ,  Andrew J. McKerrow

IPC分类号： H01L21/225 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455 ,  C23C16/458

CPC分类号： H01L21/02123 ,  C23C16/045 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/4408 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/4554 ,  C23C16/45544 ,  C23C16/52 ,  C23C16/56 ,  H01J37/32412 ,  H01J2237/3321 ,  H01J2237/3365 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/76831 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

公开(公告)号：US07148155B1

公开(公告)日：2006-12-12

申请号：US10975028

申请日：2004-10-26

申请人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

发明人： Raihan M. Tarafdar ,  George D. Papasouliotis ,  Ron Rulkens ,  Dennis M. Hausmann ,  Jeff Tobin ,  Adrianne K. Tipton ,  Bunsen Nie

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31612 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

摘要： A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.

摘要翻译： 通过顺序沉积/退火技术在基板表面上形成二氧化硅基介电层。 沉积层厚度不足以防止退火处理剂基本上完全渗透到层中并将水从层中迁移出来。 然后将电介质层退火，理想地在中等温度下去除水，从而使膜完全致密化。 然后重复沉积和退火处理，直到达到所需的电介质膜厚度。

公开(公告)号：US07129189B1

公开(公告)日：2006-10-31

申请号：US10874808

申请日：2004-06-22

申请人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Bunsen Nie ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar

发明人： Dennis M. Hausmann ,  Adrianne K. Tipton ,  Bunsen Nie ,  George D. Papasouliotis ,  Ron Rulkens ,  Raihan M. Tarafdar

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/45553 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/314 ,  H01L21/3142 ,  H01L21/31608

摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.

摘要翻译： 使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。 所得到的电介质膜使用原子层沉积（ALD）和快速表面催化气相沉积（RVD）来施加磷酸盐掺杂的硅酸盐膜。 该方法包括以下四个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本上饱和的含铝前体层; 将衬底表面暴露于含磷酸盐的前体气体以在衬底表面上形成磷酸铝; 将衬底表面暴露于含铝前体气体，以在衬底表面上形成第二基本饱和的含铝前体层; 并将衬底表面暴露于含硅前体气体以形成电介质膜。 通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。 可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

公开(公告)号：US07097878B1

公开(公告)日：2006-08-29

申请号：US10874814

申请日：2004-06-22

申请人： Ron Rulkens ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  George D. Papasouliotis ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

发明人： Ron Rulkens ,  Dennis M. Hausmann ,  Raihan M. Tarafdar ,  George D. Papasouliotis ,  Bunsen Nie ,  Adrianne K. Tipton ,  Jeff Tobin

IPC分类号： C23C16/40 ,  C23C16/56

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45534 ,  C23C16/45553

摘要： A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.

摘要翻译： 使用快速蒸镀（RVD）的方法将介电材料沉积在衬底表面的小特征上。 所得到的介电膜较厚，生长速度更快，显示出更好的间隙填充性能，并且与硅上具有相同烷氧基取代基的硅前体产生的膜相比具有改进的膜性能。 该方法包括以下两个主要操作：将衬底表面暴露于含金属前体气体，以在衬底表面上形成基本饱和的含金属前体层; 并将衬底表面暴露于混合的烷氧基取代的含硅前体气体以形成电介质膜。

公开(公告)号：US20110256726A1

公开(公告)日：2011-10-20

申请号：US13084399

申请日：2011-04-11

申请人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

发明人： Adrien LaVoie ,  Shankar Swaminathan ,  Hu Kang ,  Ramesh Chandrasekharan ,  Tom Dorsh ,  Dennis M. Hausmann ,  Jon Henri ,  Thomas Jewell ,  Ming Li ,  Bryan Schlief ,  Antonio Xavier ,  Thomas W. Mountsier ,  Bart J. van Schravendijk ,  Easwar Srinivasan ,  Mandyam Sriram

IPC分类号： H01L21/311 ,  H01L21/31 ,  H01L21/306 ,  C23F1/02 ,  B05C5/00 ,  B32B38/08

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45523 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/76224 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76837 ,  H01L21/76898

摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.

摘要翻译： 在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。 在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。