公开(公告)号：US20050160974A1

公开(公告)日：2005-07-28

申请号：US11034363

申请日：2005-01-10

Applicant: Igor Ivanov ,  Weiguo Zhang

Inventor： Igor Ivanov ,  Weiguo Zhang

IPC: C23C18/16 ,  H01L21/00 ,  H01L21/288 ,  H01L21/768 ,  C23C14/00

CPC classification number: H01L21/76843 ,  C23C18/1619 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76874

Abstract: A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.

Abstract translation: 提供了一种处理室，其包括门，所述门被配置为使障碍物与门的开口和处理室的开口对齐，使得两个开口被密封或提供​​到腔室的空气通道。 提供了一种方法，包括用门闩将密封一个开口的腔室，并将地形暴露于第一组工艺步骤，打开门闩，使得空气通道被提供到处理室，并将该地形暴露于 第二组处理步骤，而不允许室内的液体流过空气通道。 包括具有杠杆的夹爪和联接到杠杆的支撑构件的衬底保持器也在本文中考虑。 本文还提供了一种具有布置在衬底保持器上方的储存器的处理室。

公开(公告)号：US20050181134A1

公开(公告)日：2005-08-18

申请号：US11102143

申请日：2005-04-08

Applicant: Igor Ivanov ,  Weiguo Zhang

Inventor： Igor Ivanov ,  Weiguo Zhang

IPC: H01L21/00 ,  H01L21/687 ,  B05D3/04

CPC classification number: H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

公开(公告)号：US20050181135A1

公开(公告)日：2005-08-18

申请号：US11108589

申请日：2005-04-18

Applicant: Igor Ivanov ,  Weiguo Zhang

Inventor： Igor Ivanov ,  Weiguo Zhang

IPC: H01L21/00 ,  H01L21/687 ,  B05D3/04

CPC classification number: H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract translation: 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。 在一些实施例中，流体可以填充封闭区域。 另外或替代地，围绕地形可以形成第二封闭区域。 因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。 在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。 因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。 用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

公开(公告)号：US20050016201A1

公开(公告)日：2005-01-27

申请号：US10624397

申请日：2003-07-22

Applicant: Igor Ivanov ,  Weiguo Zhang

Inventor： Igor Ivanov ,  Weiguo Zhang

IPC: C23C18/16 ,  H01L21/00 ,  F25D13/04 ,  F25D17/02

CPC classification number: H01L21/67248 ,  C23C18/1619 ,  C23C18/1676 ,  H01L21/67023 ,  H01L21/6715

Abstract: A system is provided which is adapted to transport a fluid from a plurality of serially coupled tanks to a chamber configured to process microelectronic wafers. The system further includes a plurality of temperature controllers positioned such that the chamber and the tanks are characterized into at least three zones based upon the adaptations of the controllers to maintain the fluid within each zone within a distinct temperature range. A method is also provided which includes storing a fluid within a preliminary temperature range, transporting the fluid to an intermediate tank and controlling the fluid temperature within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range. The method further includes delivering the fluid to a process chamber and controlling the fluid temperature within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.

Abstract translation: 提供了一种系统，其适于将流体从多个串联耦合的罐输送到被配置为处理微电子晶片的室。 该系统还包括多个温度控制器，其定位成使得基于控制器的适应性使得室和罐的特征在于至少三个区域，以将每个区域内的流体保持在不同的温度范围内。 还提供了一种方法，其包括将流体存储在初步温度范围内，将流体输送到中间罐并将中间罐内的流体温度控制在与初步温度范围不同的过渡温度范围内。 该方法还包括将流体输送到处理室并将处理室内的流体温度控制在与预备温度和过渡温度范围不同的过程温度范围内。

公开(公告)号：US08003159B2

公开(公告)日：2011-08-23

申请号：US11108589

申请日：2005-04-18

Applicant: Igor C. Ivanov ,  Weiguo Zhang

Inventor： Igor C. Ivanov ,  Weiguo Zhang

IPC: B05D3/04

CPC classification number: H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract translation: 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。 在一些实施例中，流体可以填充封闭区域。 另外或替代地，围绕地形可以形成第二封闭区域。 因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。 在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。 因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。 用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

公开(公告)号：US07883739B2

公开(公告)日：2011-02-08

申请号：US10462343

申请日：2003-06-16

Applicant: Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

Inventor： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC: B05D5/12 ,  H01L21/4763

CPC classification number: H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract translation: 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层，并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。

公开(公告)号：US06448773B1

公开(公告)日：2002-09-10

申请号：US09512323

申请日：2000-02-24

Applicant: Weiguo Zhang

Inventor： Weiguo Zhang

IPC: G01V300

CPC classification number: G01R33/56518

Abstract: A method and apparatus is disclosed for measuring and compensating the effects of eddy currents induced during NMR imaging operations. A cubic or cylindrical sample is placed in the imaging volume of a MRI system at a position centrally located with respect to the main magnetic field and oriented with its longitudinal axis parallel to a desired measuring direction. A magnetic field gradient pulse is applied for inducing eddy currents as well as for generating a slice-selective spin-echo signal. The spin-echo signal is acquired immediately after the termination of each eddy-current inducing gradient pulse. Two slices are selected along the desired measurement direction at symmetrical equal distance from the center of the main magnetic field. Two spin-echo signals are acquired for each slice with the polarity of the eddy-current inducing gradient pulse reversed between the two echo signals. Quantitative values for eddy-current induced field gradients and B0 oscillations are determined based on the precessing frequencies of the acquired NMR signals. NMR imaging is improved by compensating for eddy currents effects by applying the quantified values of the field gradients and B0 oscillations to set an appropriate pre-emphasis network. Gradient pulses in MRI/MRS pulse sequences may also be selectively pre-distorted or modified to compensate for resulting gradient-switching induced eddy currents. Other aspects of the disclosed method include measuring the time course of gradient switching, altering the pulse sequences to measure eddy currents having long time constants, repeatedly measuring the eddy currents to assist in pre-emphasis adjustments, and measuring EC-induced field gradients and B0 oscillation in the presence of moderately large background field inhomogeneities.

Abstract translation: 公开了用于测量和补偿在NMR成像操作期间感应的涡流的影响的方法和装置。 将立方体或圆柱形样品放置在相对于主磁场中心定位的位置处的MRI系统的成像体积中，并且其纵向轴线平行于期望的测量方向。 施加磁场梯度脉冲以诱导涡流以及用于产生切片选择性自旋回波信号。 在每个涡电流感生梯度脉冲终止之后立即获取自旋回波信号。 沿着与主磁场中心对称等距的所需测量方向选择两个切片。 对于每个切片获取两个自旋回波信号，其中涡电流感应梯度脉冲的极性在两个回波信号之间相反。 基于获取的NMR信号的进动频率来确定涡流感应场梯度和B0振荡的定量值。 通过应用场梯度和B0振荡的量化值来补偿涡流效应来改善NMR成像，以设置适当的预加重网络。 MRI / MRS脉冲序列中的梯度脉冲也可以被选择性地预失真或修改以补偿所得到的梯度切换感应涡流。 所公开方法的其他方面包括测量梯度切换的时间过程，改变脉冲序列以测量具有长时间常数的涡流，重复测量涡流以辅助预加重调整，以及测量EC诱导的场梯度和B0 存在中等大背景场不均匀性的情况下的振荡。

公开(公告)号：US08586133B2

公开(公告)日：2013-11-19

申请号：US13540036

申请日：2012-07-02

Applicant: Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

Inventor： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC: C23C20/02 ,  C23C20/04 ,  H01L21/28 ,  H01L21/288

CPC classification number: H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract translation: 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。

公开(公告)号：US20110271905A1

公开(公告)日：2011-11-10

申请号：US13185638

申请日：2011-07-19

Applicant: Igor C. Ivanov ,  Weiguo Zhang

Inventor： Igor C. Ivanov ,  Weiguo Zhang

IPC: B05C11/00

CPC classification number: H01L21/68728 ,  H01L21/67051 ,  H01L21/6708 ,  Y02P80/30

Abstract: Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.

Abstract translation: 提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。 通常，方法可以包括将形貌加载到腔室中，关闭腔室以形成封闭区域，并将流体供应到封闭区域。 在一些实施例中，流体可以填充封闭区域。 另外或替代地，围绕地形可以形成第二封闭区域。 因此，所提供的系统可以适于在基板保持器周围形成不同的封闭区域。 在一些情况下，该方法可以包括搅拌溶液以在无电沉积工艺期间使气泡在晶片上的累积最小化。 因此，本文提供的系统可以包括在一些实施例中用于搅拌溶液的装置。 用于搅拌的这种手段可能不同于用于将溶液供应到室的入口。

公开(公告)号：US20110014489A1

公开(公告)日：2011-01-20

申请号：US12889688

申请日：2010-09-24

Applicant: Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

Inventor： Igor C. Ivanov ,  Weiguo Zhang ,  Artur Kolics

IPC: B32B15/00 ,  B32B3/02 ,  B05D5/12 ,  B05D3/06 ,  B05C11/00

CPC classification number: H01L21/64 ,  C23C8/02 ,  C23C18/1605 ,  C23C18/1632 ,  C23C18/1683 ,  C23C18/1803 ,  C23C28/00 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/3455 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76864 ,  H01L21/76874 ,  Y10T428/1241 ,  Y10T428/12493 ,  Y10T428/12549 ,  Y10T428/23 ,  Y10T428/24628

Abstract: A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.

Abstract translation: 提供了一种方法，其包括形成金属层并将金属层的至少一部分转化为水合金属氧化物层。 提供了另一种方法，其包括在另一电介质层上选择性地沉积电介质层并且选择性地沉积与电介质层相邻的金属层。 因此，形成微电子拓扑，其包括分别包括亲水和疏水材料的下层和上层的金属特征和相邻电介质部分。 本文还提供了包括具有单层的金属特征的地形，其中至少四个元件衬在下表面和金属特征的侧壁。 用于形成这种单层的流体可以通过配置成测量所有四个元素的浓度的测试设备进行分析。 在一些情况下，可以基于分析来调整流体的组成。