Abstract:
The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have random access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.
Abstract:
A process chamber is provided which includes a gate configured to align barriers with an opening of the gate and an opening of the process chamber such that the two openings are either sealed or provide an air passage to the chamber. A method is provided and includes sealing an opening of a chamber with a gate latch and exposing a topography to a first set of process steps, opening the gate latch such that an air passage is provided to the process chamber, and exposing the topography to a second set of process steps without allowing liquids within the chamber to flow through the air passage. A substrate holder comprising a clamping jaw with a lever and a support member coupled to the lever is also contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided herein.
Abstract:
An apparatus of the invention has a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber contains a substrate holder that can be rotated around a vertical axis, and an edge-grip mechanism inside the substrate holder. The deposition chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, DI water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus is also provided with reservoirs and tanks for processing liquids and gases, as well as with a solution heater and a control system for controlling temperature and pressure in the chamber. The heater can be located outside the working chamber or built into the substrate holder, or both heaters can be used simultaneously. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto.
Abstract:
Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
Abstract:
Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber.
Abstract:
A system is provided which is adapted to transport a fluid from a plurality of serially coupled tanks to a chamber configured to process microelectronic wafers. The system further includes a plurality of temperature controllers positioned such that the chamber and the tanks are characterized into at least three zones based upon the adaptations of the controllers to maintain the fluid within each zone within a distinct temperature range. A method is also provided which includes storing a fluid within a preliminary temperature range, transporting the fluid to an intermediate tank and controlling the fluid temperature within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range. The method further includes delivering the fluid to a process chamber and controlling the fluid temperature within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.
Abstract:
An electroless plating system includes a plating solution, and controlling reducing agents in the plating solution for deposition over outlier features smaller than about five hundred nanometers and isolated by about one thousand nanometers.
Abstract:
The present invention describes a method or uses of prevention and/or treatment of a cancer or a tumor, and in particular to a combination therapy, methods, compositions and pharmaceutical packages comprising an inhibitor of receptors of the EGFR family or a chemotherapeutically active pyrimidine analogue and certain platinum-based chemotherapeutic agents.
Abstract:
An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
Abstract:
A method of generating a protected digital media content, is provided. According to an embodiment of the present invention, the method includes generating a protected digital media content, comprising: generating a first control signal for use in an authorization signature of digital media content, generating a second control signal for use in a certification of the content owner's right, and generating information about the digital media content; and adding the first control signal, the second control signal, and the information to the digital media content to provide a protected content.