公开(公告)号：US07311776B2

公开(公告)日：2007-12-25

申请号：US11027749

申请日：2004-12-29

申请人： Liwei Lin ,  Ongi Englander ,  Dane Christensen

发明人： Liwei Lin ,  Ongi Englander ,  Dane Christensen

IPC分类号： C30B19/12

CPC分类号： H01L21/02532 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B33/02 ,  C01B2202/34 ,  C01B2202/36 ,  C23C16/0281 ,  C23C16/24 ,  C23C16/26 ,  H01L21/02381 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/02645 ,  H01L21/02653 ,  H01L51/0002 ,  H01L51/0048 ,  H01L51/0052

摘要： Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano-to micro-integration.

摘要翻译： 描述了用于硅纳米线和碳纳米管的局部合成的系统和方法，以及硅纳米线和碳纳米管的电场辅助自组装。 通过在纳米线或纳米管的生长中采用局部加热，可以在室温室中的器件上合成结构，而不对器件进行整体加热。 该方法是局部和选择性的，并且提供悬浮的微结构以实现气相沉积合成的热需求，而芯片或衬底的其余部分保持在室温。 此外，通过采用根据本发明的电场辅助自组装技术，不需要使纳米管和纳米线生长并且将它们单独地连接到器件。 相反，本发明提供纳米管和纳米线在装置本身上的自组装，从而提供纳米到微集成。

公开(公告)号：US20070202674A1

公开(公告)日：2007-08-30

申请号：US11742180

申请日：2007-04-30

申请人： Guy Cohen ,  Paul Solomon

发明人： Guy Cohen ,  Paul Solomon

IPC分类号： H01L21/3205

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/045 ,  H01L29/0676 ,  H01L29/66666 ,  H01L29/7827 ,  H01L29/7828 ,  Y10S977/762 ,  Y10S977/938

摘要： A vertical FET structure with nanowire forming the FET channels is disclosed. The nanowires are formed over a conductive silicide layer. The nanowires are gated by a surrounding gate. Top and bottom insulator plugs function as gate spacers and reduce the gate-source and gate-drain capacitance.

摘要翻译： 公开了一种具有形成FET沟道的纳米线的垂直FET结构。 纳米线形成在导电硅化物层上。 纳米线由周围的门浇口。 顶部和底部绝缘体插塞用作栅极间隔，并减少栅极 - 源极和栅极 - 漏极电容。

公开(公告)号：US07238594B2

公开(公告)日：2007-07-03

申请号：US11008989

申请日：2004-12-13

申请人： Stephen J. Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

发明人： Stephen J. Fonash ,  Yinghui Shan ,  Chih-Yi Peng ,  Ali Kaan Kalkan ,  Joseph D. Cuiffi ,  Daniel Hayes ,  Paul Butterfoss ,  Wook Jun Nam

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： B81C1/0019 ,  B81B2203/0109 ,  B81B2203/0118 ,  B82Y10/00 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/0259 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L51/0002 ,  Y02E10/549 ,  Y10S977/762

摘要： This invention presents a novel method to form uniform or heterogeneous, straight or curved and size-controllable nanostructures including, for example, nanotubes, nanowires, nanoribbons, and nanotapes, including SiNW, using a nanochannel template. In the case of semiconductor nanowires, doping can be included during growth. Electrode contacts are present as needed and may be built in to the template structure. Thus completed devices such as diodes, transistors, solar cells, sensors, and transducers are fabricated, contacted, and arrayed as nanowire or nanotape fabrication is completed. Optionally, the template is not removed and may become part of the structure. Nanodevices such as nanotweezers, nanocantilevers, and nanobridges are formed utilizing the processes of the invention.

摘要翻译： 本发明提出了一种使用纳米通道模板形成均匀或不均匀的直线或弯曲和尺寸可控的纳米结构的新方法，其包括例如纳米管，纳米线，纳米带和纳米线，包括SiNW。 在半导体纳米线的情况下，可以在生长期间包括掺杂。 根据需要存在电极触点，并且可以内置于模板结构中。 如纳米线或纳米管制造完成时，制造，接触和排列诸如二极管，晶体管，太阳能电池，传感器和换能器的完成器件。 可选地，模板不被移除并且可以成为结构的一部分。 使用本发明的方法形成纳米维持器，纳米悬臂和纳米桥的纳米装置。

公开(公告)号：US07211143B2

公开(公告)日：2007-05-01

申请号：US10731745

申请日：2003-12-08

申请人： Peidong Yang ,  Rongrui He ,  Joshua Goldberger ,  Rong Fan ,  Yi-Ying Wu ,  Deyu Li ,  Arun Majumdar

发明人： Peidong Yang ,  Rongrui He ,  Joshua Goldberger ,  Rong Fan ,  Yi-Ying Wu ,  Deyu Li ,  Arun Majumdar

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12

CPC分类号： C30B29/602 ,  B82Y10/00 ,  B82Y30/00 ,  C30B25/02 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  H01L21/02664 ,  H01L29/0676 ,  H01L29/068 ,  H01L2924/0002 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/855 ,  H01L2924/00

摘要： Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar “epitaxial-casting” approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

摘要翻译： 描述了制造均匀纳米管的方法，其中纳米管在纳米线模板上合成为鞘，例如使用化学气相沉积工艺。 例如，单晶氧化锌（ZnO）纳米线被用作在其上外延生长氮化镓（GaN）的模板。 然后去除ZnO模板，例如通过热还原和蒸发。 完成的单晶GaN纳米管的内径优选为30nm至200nm，壁厚为5至50nm。 透射电子显微镜研究表明，所得纳米管是具有纤锌矿结构的单晶，沿着<001>方向取向。 本发明例示了具有非层状晶体结构的材料的单晶纳米管。 可以使用类似的“外延铸造”方法来生产其他固体材料和半导体的阵列和单晶纳米管。 此外，还描述了多皮纳米管的制造以及具有多个纵向段的纳米管。

公开(公告)号：US20070032052A1

公开(公告)日：2007-02-08

申请号：US11543746

申请日：2006-10-04

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/00

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US20070026645A1

公开(公告)日：2007-02-01

申请号：US11543326

申请日：2006-10-04

申请人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

发明人： Charles Lieber ,  Yi Cui ,  Xiangfeng Duan ,  Yu Huang

IPC分类号： H01L21/20

CPC分类号： H01L29/0665 ,  B01J23/50 ,  B01J23/52 ,  B01J23/72 ,  B01J35/0013 ,  B01J37/349 ,  B81C1/0019 ,  B81C1/00206 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C30B11/00 ,  C30B25/005 ,  C30B29/605 ,  G01N27/4146 ,  G01N33/54373 ,  G11C13/0014 ,  G11C13/0019 ,  G11C13/025 ,  G11C13/04 ,  G11C2213/77 ,  G11C2213/81 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L23/53276 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/18 ,  H01L29/20 ,  H01L29/207 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/267 ,  H01L33/06 ,  H01L33/18 ,  H01L33/20 ,  H01L51/002 ,  H01L51/0048 ,  H01L2924/0002 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S438/962 ,  Y10S977/762 ,  Y10S977/847 ,  Y10S977/858 ,  Y10S977/882 ,  Y10S977/883 ,  Y10S977/892 ,  Y10S977/936 ,  Y10T428/24 ,  H01L2924/00

摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and may have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

公开(公告)号：US07129154B2

公开(公告)日：2006-10-31

申请号：US10857191

申请日：2004-05-28

申请人： Sung Soo Yi

发明人： Sung Soo Yi

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  C30B11/12 ,  C30B29/06 ,  C30B29/42 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02653 ,  Y10S977/762 ,  Y10S977/818

摘要： A nanowire of a semiconductor material and having a uniform cross-sectional area along its length is grown using a chemical vapor deposition process. In the method, a substrate is provided, a catalyst nanoparticle is deposited on the substrate, a gaseous precursor mixture comprising a constituent element of the semiconductor material is passed over the substrate, and adatoms of the constituent element are removed from a lateral surface of the nanowire during the passing of the precursor mixture. The removing comprises passing over the substrate a gaseous etchant that forms a volatile compound with the adatoms, the gaseous etchant comprising a halogenated hydrocarbon. Removing the adatoms of the constituent element before such adatoms are incorporated into the nanowire prevents such adatoms from accumulating on the lateral surface of the nanowire and allows the nanowire to grow with a uniform cross-sectional area along its length.

摘要翻译： 使用化学气相沉积工艺生长半导体材料的纳米线并沿其长度具有均匀的横截面积。 在该方法中，提供衬底，催化剂纳米颗粒沉积在衬底上，包含半导体材料的构成元素的气态前体混合物通过衬底，并且构成元素的原子从侧面 纳米线在前体混合物通过期间。 去除包括使基板上的气溶胶与吸附原子一起形成挥发性化合物，气态蚀刻剂包括卤代烃。 在将这些吸附原子并入纳米线之前去除构成元素的吸附原子可以防止这种吸附原子积聚在纳米线的侧表面上，并允许纳米线沿着其长度以均匀的横截面积生长。

公开(公告)号：US20060057360A1

公开(公告)日：2006-03-16

申请号：US10986438

申请日：2004-11-12

申请人： Lars Samuelson ,  Knut Deppert

发明人： Lars Samuelson ,  Knut Deppert

IPC分类号： C23C16/00 ,  B32B5/16 ,  B05D1/36

CPC分类号： C30B29/62 ,  B01J21/185 ,  B01J37/0238 ,  B82Y20/00 ,  B82Y30/00 ,  C30B11/12 ,  C30B29/40 ,  C30B29/44 ,  C30B29/605 ,  H01L21/02392 ,  H01L21/02433 ,  H01L21/02543 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/101 ,  H01L33/18 ,  H01L33/20 ,  H01L33/24 ,  Y02E10/50 ,  Y10S438/96 ,  Y10S438/962 ,  Y10S977/754 ,  Y10S977/89 ,  Y10S977/891 ,  Y10S977/921 ,  Y10T428/25

摘要： A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material. A neural network may be formed by positioning the first nanowhiskers close together so that adjacent trees contact one another through nanowhiskers grown in a subsequent stage, and heterojunctions within the nanowhiskers create tunnel barriers to current flow.

摘要翻译： 形成具有树形形状的纳米结构的方法包括第一阶段和第二阶段。 第一阶段包括在衬底表面上提供一种或多种催化剂颗粒，以及通过每种催化剂颗粒生长第一纳米晶须。 第二阶段包括在每个第一纳米晶须的外围提供一个或多个第二催化剂颗粒，并且从每个第二催化颗粒生长从相应的第一纳米晶须的周边横向延伸的第二纳米晶须。 可以包括进一步的阶段以生长从前一级的纳米晶须延伸出的一个或多个另外的纳米晶须。 可能在纳米晶须内形成异质结构。 这样的纳米结构可以形成太阳能电池阵列或发光平板的组件，其中纳米晶须由感光材料形成。 可以通过将第一纳米晶须紧靠在一起而使得相邻的树木通过在后续阶段中生长的纳米晶须彼此接触而形成神经网络，并且纳米晶须内的异质结形成对当前流动的隧道势垒。

公开(公告)号：US20060019470A1

公开(公告)日：2006-01-26

申请号：US11049293

申请日：2005-02-03

申请人： Werner Seifert ,  Lars Samuelson ,  Bjorn Ohlsson ,  Lars Borgstrom

发明人： Werner Seifert ,  Lars Samuelson ,  Bjorn Ohlsson ,  Lars Borgstrom

IPC分类号： H01L21/20

CPC分类号： C30B11/12 ,  B01J23/52 ,  B82Y30/00 ,  C30B25/005 ,  C30B29/605 ,  C30B29/62 ,  H01L21/02387 ,  H01L21/02392 ,  H01L21/02488 ,  H01L21/02538 ,  H01L21/02543 ,  H01L21/02551 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02653 ,  Y10S977/825

摘要： Nanowhiskers are grown in a non-preferential growth direction by regulation of nucleation conditions to inhibit growth in a preferential direction. In a preferred implementation, III-V semiconductor nanowhiskers are grown on an (001) III-V semiconductor substrate surface by effectively inhibiting growth in the preferential B direction. As one example, InP nano-wires were grown by metal-organic vapor phase epitaxy directly on (001) InP substrates. Characterization by scanning electron microscopy and transmission electron microscopy revealed wires with nearly square cross sections and a perfect zincblende crystalline structure that is free of stacking faults.

摘要翻译： 纳米晶须通过调节成核条件在非优先生长方向生长，以抑制生长在优先方向。 在优选的实施方式中，通过有效地抑制优先的<111> B方向的生长，在（001）III-V半导体衬底表面上生长<001> III-V半导体纳米晶须。 作为一个示例，通过直接在（001）InP衬底上的金属 - 有机气相外延生长<001> InP纳米线。 通过扫描电子显微镜和透射电子显微镜的表征显示具有近似正方形截面的线和完全的闪锌矿晶体结构，其没有堆垛层错。

公开(公告)号：US20060009003A1

公开(公告)日：2006-01-12

申请号：US11117702

申请日：2005-04-29

申请人： Linda Romano ,  James Hamilton

发明人： Linda Romano ,  James Hamilton

IPC分类号： H01L21/20

CPC分类号： C30B29/605 ,  B82Y10/00 ,  C30B11/12 ,  H01L21/02439 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/125 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78684 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/0048 ,  Y10S977/762 ,  Y10S977/938 ,  Y10T428/139 ,  Y10T428/2902 ,  Y10T428/2949

摘要： The present invention is directed to methods to produce, process, and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. A method is also provided in which two or more thin films of different materials are overlayed over a substrate, selectively etching the first underlying thin film to create a plurality of islands of the second thin film that mask portions of the first thin film and expose other portions and growing nanowires on the first thin film. Additional methods for producing nanowires are provided.

摘要翻译： 本发明涉及生产，加工和利用纳米材料，特别是细长的纳米线材料的方法。 本发明提供一种纳米线的制造方法，其包括在基板上提供具有变化厚度的催化剂材料的薄膜，加热基板和薄膜，使得薄膜在相对较薄的区域分离并将半导体蒸镀到 底物产生纳米线。 还提供了一种方法，其中两个或更多个不同材料的薄膜覆盖在衬底上，选择性地蚀刻第一下面的薄膜以产生第二薄膜的多个岛，该第二薄膜的掩模部分的第一薄膜并暴露其他 部分和在第一薄膜上生长纳米线。 提供了生产纳米线的附加方法。