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    Amphiphilic multi-arm copolymers and nanomaterials derived therefrom
    1.
    发明授权
    Amphiphilic multi-arm copolymers and nanomaterials derived therefrom 有权
    两亲性多臂共聚物和由其衍生的纳米材料

    公开(公告)号：US08993665B2

    公开(公告)日：2015-03-31

    申请号：US13748763

    申请日：2013-01-24

    申请人： Iowa State University Research Foundation, Inc.

    发明人： Zhiqun Lin ,  Xinchang Pang

    IPC分类号： C08K3/10 ,  C08F251/00 ,  C08G81/02 ,  C08G69/40 ,  B82Y30/00

    CPC分类号： C08F251/00 ,  B82Y30/00 ,  C08G69/40 ,  C08G81/025 ,  Y10S977/754 ,  Y10S977/81 ,  Y10S977/811

    摘要： The present invention relates to polymers, nanomaterials, and methods of making the same. Various embodiments provide an amphiphilic multi-arm copolymer. The copolymer includes a core unit and a plurality of amphiphilic block copolymer arms. Each block copolymer arm is substituted on the core unit. Each block copolymer arm includes at least one hydrophilic homopolymer subunit and at least one hydrophobic homopolymer subunit. In some examples, the copolymer can include a star-like or bottlebrush-like block copolymer, and can include a Janus copolymer. Various embodiments provide a nanomaterial. In some examples, the nanomaterial can include Janus nanomaterials, and can include nanoparticles, nanorods, or nanotubes. The nanomaterial includes the amphiphilic multi-arm copolymer and at least one inorganic precursor. The inorganic precursor can be coordinated to at least one homopolymer subunit of one of the amphiphilic block copolymer arms to form the nanomaterial. Various embodiments also provide methods of making the copolymer and the nanomaterial.

    摘要翻译： 本发明涉及聚合物，纳米材料及其制备方法。 各种实施方案提供两亲性多臂共聚物。 共聚物包括核心单元和多个两亲嵌段共聚物臂。 每个嵌段共聚物臂在核心单元上被取代。 每个嵌段共聚物臂包括至少一个亲水均聚物亚单元和至少一个疏水均聚物亚单元。 在一些实例中，共聚物可以包括星形或瓶塞状嵌段共聚物，并且可以包括Janus共聚物。 各种实施方案提供纳米材料。 在一些实例中，纳米材料可以包括Janus纳米材料，并且可以包括纳米颗粒，纳米棒或纳米管。 纳米材料包括两亲多臂共聚物和至少一种无机前体。 无机前体可以与两亲性嵌段共聚物臂之一的至少一个均聚物亚基配位以形成纳米材料。 各种实施方案还提供了制备共聚物和纳米材料的方法。

    GRAPHENE AND ITS GROWTH
    3.
    发明申请
    GRAPHENE AND ITS GROWTH 有权
    石墨及其成长

    公开(公告)号：US20140050652A1

    公开(公告)日：2014-02-20

    申请号：US13753707

    申请日：2013-01-30

    申请人： NATIONAL CHENG KUNG UNIVERSITY

    发明人： Yon Hua TZENG

    IPC分类号： C30B25/02 ,  C30B29/64 ,  C30B25/18 ,  C30B29/02

    CPC分类号： C30B25/02 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C30B25/18 ,  C30B29/02 ,  C30B29/60 ,  C30B29/64 ,  Y10S977/754

    摘要： The present invention provides graphene nuclei including monolayer single-crystalline graphene nuclei and a method of growing from them two-dimensional graphene dendrites, with aspect ratio of the main branches increasing with growth time, on catalytic metal surface using thermal chemical vapor deposition. By controlling the supply rates of the carbon etching gas and the carbon deposition species, it results in graphene branches being merged to form a two-dimensional monolayer single-crystalline graphene plate and further allows multiple graphene plates to merge and form a large-area continuous monolayer graphene plate.

    摘要翻译： 本发明提供了包括单层单晶石墨烯核的石墨烯核，以及使用热化学气相沉积在催化金属表面上使主要分支的纵横比随着生长时间增加的二维石墨烯枝晶生长的方法。 通过控制碳蚀刻气体和碳沉积物质的供给速率，其结果是石墨烯分支被合并以形成二维单层单晶石墨烯板，并且进一步允许多个石墨烯板合并并形成大面积连续 单层石墨烯板。

    Phase-change memory device
    4.
    发明授权
    Phase-change memory device 有权
    相变存储器件

    公开(公告)号：US08248844B2

    公开(公告)日：2012-08-21

    申请号：US13347021

    申请日：2012-01-10

    申请人： Ki-won Lim ,  Won-ryul Chung ,  Young-ran Kim

    发明人： Ki-won Lim ,  Won-ryul Chung ,  Young-ran Kim

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C2013/0083 ,  Y10S977/754

    摘要： A phase-change memory device and its firing method are provided. The firing method of the phase-change memory device includes applying a writing current to phase-change memory cells, identifying a state of the phase-change memory cells after applying the writing current, and applying a firing current, in which an additional current is added to the writing current, to the phase-change memory cells in accordance with the state.

    摘要翻译： 提供了相变存储器件及其烧制方法。 相变存储装置的点火方法包括向相变存储单元施加写入电流，在施加写入电流之后识别相变存储单元的状态，并施加额外电流为 根据该状态将相加变换存储单元加到写入电流上。

    MULTIPLE LEVEL CELL PHASE-CHANGE MEMORY DEVICES HAVING PRE-READING OPERATION RESISTANCE DRIFT RECOVERY, MEMORY SYSTEMS EMPLOYING SUCH DEVICES AND METHODS OF READING MEMORY DEVICES
    10.
    发明申请
    MULTIPLE LEVEL CELL PHASE-CHANGE MEMORY DEVICES HAVING PRE-READING OPERATION RESISTANCE DRIFT RECOVERY, MEMORY SYSTEMS EMPLOYING SUCH DEVICES AND METHODS OF READING MEMORY DEVICES 有权
    具有预读操作电阻恢复的多级电平相变存储器件，使用这种器件的存储器系统和读存储器件的方法

    公开(公告)号：US20110188304A1

    公开(公告)日：2011-08-04

    申请号：US13084906

    申请日：2011-04-12

    申请人： Jeong Chang-Wook ,  Gi-Tae Jeong ,  Hyeong-Jun Kim ,  Seung-Pil Ko

    发明人： Jeong Chang-Wook ,  Gi-Tae Jeong ,  Hyeong-Jun Kim ,  Seung-Pil Ko

    IPC分类号： G11C11/00

    CPC分类号： G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0078 ,  Y10S977/754

    摘要： A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

    摘要翻译： 存储器件包括多个存储器单元，每个存储器单元包括存储单元材料，该存储单元材料具有响应于编程操作中所施加的编程电流而确定的初始电阻，存储单元的电阻从初始电阻变化 编程操作之后的时间段，并且每个存储器单元连接到存储器件的传导线，其用于在编程操作中应用编程电流来对相应的存储器单元的电阻进行编程，并且用于应用编程 读取电流以读取读取操作中的相应存储单元的电阻。 修改电路修改为读取操作选择的多个存储单元的存储单元的电阻，以在存储单元的读取操作之前将其电阻返回到接近初始电阻。