知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

292 records (took 0.026 seconds)

    Process for production of SOI substrate and process for production of semiconductor device
    1.
    发明授权
    Process for production of SOI substrate and process for production of semiconductor device 失效
    制造SOI衬底的工艺和制造半导体器件的工艺

    公开(公告)号：US08642405B2

    公开(公告)日：2014-02-04

    申请号：US12705994

    申请日：2010-02-16

    Applicant: Takeshi Fukunaga

    Inventor： Takeshi Fukunaga

    IPC: H01L21/84 ,  H01L21/00

    CPC classification number: H01L27/1266 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/146 ,  H01L29/78621 ,  Y10S438/96

    Abstract: A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

    Abstract translation: 一种制造粘附的SOI衬底而不会引起单晶硅薄膜的破裂和剥离的方法。 该方法包括在单晶半导体衬底中选择性地形成多孔硅层，向单晶半导体衬底中加入氢以形成加氢层，将单晶半导体衬底粘附到支撑衬底上， 通过热退火在氢添加层的晶体半导体衬底，再次进行热退火以稳定粘合界面，并且选择性地除去多孔硅层，得到分成岛的单晶硅层。

    SURFACE-ACTIVATION OF SEMICONDUCTOR NANOSTRUCTURES FOR BIOLOGICAL APPLICATIONS
    2.
    发明申请
    SURFACE-ACTIVATION OF SEMICONDUCTOR NANOSTRUCTURES FOR BIOLOGICAL APPLICATIONS 审中-公开
    用于生物应用的半导体纳米结构的表面活化

    公开(公告)号：US20120061622A1

    公开(公告)日：2012-03-15

    申请号：US13215973

    申请日：2011-08-23

    Applicant: Nader M. Kalkhoran ,  James G. Moe ,  Kurt J. Linden ,  Marisa Sambito

    Inventor： Nader M. Kalkhoran ,  James G. Moe ,  Kurt J. Linden ,  Marisa Sambito

    IPC: H01B1/02 ,  H01B1/00 ,  B82Y30/00

    CPC classification number: G01N21/6489 ,  B82Y10/00 ,  Y10S438/96 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/786 ,  Y10S977/888

    Abstract: The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.

    Abstract translation: 本发明提供了用于生产表面活化的半导体纳米颗粒的方法和方法，所述表面活化的半导体纳米颗粒适于体外和体内应用，其可响应于光激发而发荧光。 可以通过在包括纳米结构网络的半导体衬底中产生多孔层来制造半导体纳米结构。 在从衬底切割之前或之后，纳米结构可以通过激活手段来激活，例如将其表面暴露于等离子体，氧化或离子注入。 在一些实施方案中，表面活化使得纳米结构更亲水，从而促进纳米颗粒的体外或体内使用的官能化。

    ALTERNATIVE METHODS FOR FABRICATION OF SUBSTRATES AND HETEROSTRUCTURES MADE OF SILICON COMPOUNDS AND ALLOYS
    3.
    发明申请
    ALTERNATIVE METHODS FOR FABRICATION OF SUBSTRATES AND HETEROSTRUCTURES MADE OF SILICON COMPOUNDS AND ALLOYS 有权
    用于制造硅化合物和合金的基板和异质结构的替代方法

    公开(公告)号：US20100291769A1

    公开(公告)日：2010-11-18

    申请号：US12781551

    申请日：2010-05-17

    Applicant: Mohamed-Ali Hasan

    Inventor： Mohamed-Ali Hasan

    IPC: H01L21/3205

    CPC classification number: C30B25/18 ,  C30B29/06 ,  C30B29/36 ,  C30B29/52 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02513 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02535 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S438/931 ,  Y10S438/96

    Abstract: The present invention relates to alternative methods for the production of crystalline silicon compounds and/or alloys such as silicon carbide layers and substrates. In one embodiment, a method of the present invention comprises heating a porous silicon deposition surface of a porous silicon substrate to a temperature operable for epitaxial deposition of at least one atom or molecule, contacting the porous silicon deposition surface with a reactive gas mixture comprising at least one chemical species comprising a group IV element and at least one silicon chemical species, and depositing a silicon-group IV element layer on the porous silicon deposition surface. In another embodiment, the chemical species comprising a group IV element can be replaced with a transition metal species to form a silicon silicide layer.

    Abstract translation: 本发明涉及用于生产晶体硅化合物和/或诸如碳化硅层和基底的合金的替代方法。 在一个实施方案中，本发明的方法包括将多孔硅衬底的多孔硅沉积表面加热到可操作以外延沉积至少一个原子或分子的温度，使多孔硅沉积表面与包含在 至少一种包含IV族元素和至少一种硅化学物质的化学物质，以及在多孔硅沉积表面上沉积硅族IV元素层。 在另一个实施方案中，包含IV族元素的化学物质可用过渡金属物质代替以形成硅化硅层。

    Field-effect transistor, sensor using it, and production method thereof
    4.
    发明授权
    Field-effect transistor, sensor using it, and production method thereof 有权
    场效应晶体管，使用它的传感器及其制造方法

    公开(公告)号：US07829362B2

    公开(公告)日：2010-11-09

    申请号：US11945838

    申请日：2007-11-27

    Applicant: Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    Inventor： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

    IPC: H01L21/336

    CPC classification number: G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

    Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

    Abstract translation: 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

    Concentric gate nanotube transistor devices
    5.
    发明授权
    Concentric gate nanotube transistor devices 失效
    同心栅纳米管晶体管器件

    公开(公告)号：US07776307B2

    公开(公告)日：2010-08-17

    申请号：US11465912

    申请日：2006-08-21

    Applicant: Thomas W. Tombler

    Inventor： Thomas W. Tombler

    IPC: H01L21/00

    CPC classification number: H01L51/0048 ,  B82Y10/00 ,  H01L51/0002 ,  H01L51/057 ,  Y10S438/96 ,  Y10S438/961

    Abstract: Single-walled carbon nanotube transistor devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A concentric gate surrounds at least a portion of a nanotube in a pore. A transistor of the invention may be especially suited for power transistor or power amplifier applications.

    Abstract translation: 单壁碳纳米管晶体管器件和制造这种器件的相关方法包括用于单壁碳纳米管的多孔结构。 多孔结构可以是阳极化氧化铝或另一种材料。 用于晶体管的源极和漏极的电极设置在单壁碳纳米管器件的相对端。 同心门围绕孔中的纳米管的至少一部分。 本发明的晶体管可以特别适用于功率晶体管或功率放大器应用。

    PROCESS FOR PRODUCTION OF SOI SUBSTRATE AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE
    6.
    发明申请
    PROCESS FOR PRODUCTION OF SOI SUBSTRATE AND PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE 失效
    用于生产SOI衬底的工艺和用于制造半导体器件的工艺

    公开(公告)号：US20100144111A1

    公开(公告)日：2010-06-10

    申请号：US12705994

    申请日：2010-02-16

    Applicant: Takeshi FUKUNAGA

    Inventor： Takeshi FUKUNAGA

    IPC: H01L21/762

    CPC classification number: H01L27/1266 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/146 ,  H01L29/78621 ,  Y10S438/96

    Abstract: A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

    Abstract translation: 一种制造粘附的SOI衬底而不会引起单晶硅薄膜的破裂和剥离的方法。 该方法包括在单晶半导体衬底中选择性地形成多孔硅层，向单晶半导体衬底中加入氢以形成加氢层，将单晶半导体衬底粘附到支撑衬底上， 通过热退火在氢添加层的晶体半导体衬底，再次进行热退火以稳定粘合界面，并且选择性地除去多孔硅层，得到分成岛的单晶硅层。

Patent Agency Ranking