公开(公告)号：US20230411150A1

公开(公告)日：2023-12-21

申请号：US18362136

申请日：2023-07-31

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Je-Ming Kuo ,  Yen-Chun Huang ,  Chih-Tang Peng ,  Tien-I Bao

IPC分类号： H01L21/02 ,  H01L29/06 ,  B05D7/00 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/762 ,  B05D3/06 ,  B05D1/38 ,  H01L21/768 ,  B05D1/00 ,  G03F7/16

CPC分类号： H01L21/02282 ,  H01L21/76828 ,  B05D7/546 ,  H01L21/823481 ,  H01L21/31111 ,  H01L21/02126 ,  H01L21/76224 ,  H01L21/0223 ,  H01L21/02164 ,  H01L21/02348 ,  H01L21/02323 ,  B05D3/067 ,  B05D1/38 ,  H01L21/76825 ,  B05D1/005 ,  H01L21/02255 ,  H01L21/76832 ,  H01L21/76826 ,  G03F7/162 ,  H01L29/0649

摘要： The present disclosure is generally related to semiconductor devices, and more particularly to a dielectric material formed in semiconductor devices. The present disclosure provides methods for forming a dielectric material layer by a cyclic spin-on coating process. In an embodiment, a method of forming a dielectric material on a substrate includes spin-coating a first portion of a dielectric material on a substrate, curing the first portion of the dielectric material on the substrate, spin-coating a second portion of the dielectric material on the substrate, and thermal annealing the dielectric material to form an annealed dielectric material on the substrate.

公开(公告)号：US20230408925A1

公开(公告)日：2023-12-21

申请号：US17749437

申请日：2022-05-20

申请人： SEMES CO., LTD.

发明人： SUN WOOK JUNG ,  KI SANG EUM ,  JIN HO CHOI ,  BYOUNG DOO CHOI ,  HEE MAN AHN

IPC分类号： G03F7/16 ,  B05C11/10

CPC分类号： G03F7/162 ,  B05C11/1039

摘要： The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes substrate treating apparatus comprising: a treating container having an inner space; a support unit configured to support and rotate a substrate within the inner space; an exhaust duct configured to exhaust the inner space; and at least one guide member combined with the treating container and configured to guide an airflow within the inner space, and wherein the at least one guide member is arranged such that the airflow within the inner space obliquely flows with respect to a rotation direction of the substrate supported by the support unit when seen from above.

公开(公告)号：US11823914B2

公开(公告)日：2023-11-21

申请号：US16922430

申请日：2020-07-07

申请人： SEMES CO., LTD.

发明人： Eunwoo Park ,  Daesung Kim

IPC分类号： H01L21/67 ,  G03F7/16 ,  B08B3/04 ,  B08B7/04 ,  B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/04 ,  B08B7/0071 ,  B08B7/04 ,  G03F7/162

摘要： An apparatus for performing heat treatment with respect to a substrate is provided. The apparatus for treating the substrate includes a substrate support member to seat a substrate on the substrate support member, a treating bowl to surround the substrate support member, a base plate provided to face a bottom surface of the substrate seated on the substrate support member, and an edge nozzle member mounted on the base plate to spray a treating liquid to a bottom edge part of the substrate seated on the substrate support member. The edge nozzle member includes a main body mounted on the base plate, a nozzle arm to mount an edge nozzle on the nozzle arm to slidably move on the main body, and a fixing member to maintain the nozzle arm at a setting position on the main body.

公开(公告)号：US20230367232A1

公开(公告)日：2023-11-16

申请号：US18226508

申请日：2023-07-26

申请人： Taiwan Semiconductor Manufacturing Company LTD

发明人： Heng-Wei Liao ,  Shih-Yun Chen ,  Ju Hung Chen

IPC分类号： G03F7/00 ,  H01L21/67 ,  H01L21/68 ,  G03F7/16

CPC分类号： G03F7/7085 ,  H01L21/6715 ,  H01L21/68 ,  G03F7/162

摘要： An alignment nozzle jig for centering a coater photoresist arm that includes an alignment nozzle block. The alignment nozzle jig also includes an endoscope holder removably secured to a bottom of the alignment nozzle block, an endoscope, and an alignment mark removably coupled to the endoscope holder opposite the alignment nozzle block. The alignment nozzle jig is retrieved from a nozzle bath by the coater arm and transferred to a center of a chuck in an associated process chamber. Via the endoscope, the coater photoresist arm is aligned with the center of the chuck using the alignment mark.

公开(公告)号：US20230367219A1

公开(公告)日：2023-11-16

申请号：US18357347

申请日：2023-07-24

申请人： Taiwan Semiconductor Manufacturing Copmany, Ltd.

发明人： Yung-Yao LEE ,  Chen Yi HSU

IPC分类号： G03F7/16 ,  H01L21/027

CPC分类号： G03F7/162 ,  H01L21/0274

摘要： A developer tool described herein includes a dispenser that includes a greater quantity of nozzles in a central portion relative to a perimeter portion such that the developer tool is capable of more effectively removing material from a photoresist layer near a center of a substrate (which tends to be thicker near the center of the substrate relative to the edge or perimeter of the substrate). In this way, the developer tool may reduce the amount of photoresist residue or scum remaining on the substrate near the center of the substrate after a development operation, which may enable defect removal and/or prevention, may increase semiconductor processing yield, and/or may increase semiconductor processing quality.

公开(公告)号：US11809081B2

公开(公告)日：2023-11-07

申请号：US17832920

申请日：2022-06-06

申请人： Inpria Corporation

发明人： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/30 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC分类号： G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

摘要： Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US11806743B2

公开(公告)日：2023-11-07

申请号：US17826561

申请日：2022-05-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ching-Hai Yang ,  Yao-Hwan Kao ,  Shang-Sheng Li ,  Kuo-Pin Chen ,  Hsiang-Kai Tseng ,  Chuan-Wei Chen

IPC分类号： B05D1/00 ,  B05C11/10 ,  B05C11/08 ,  G03F7/16 ,  G03F7/30 ,  H01L21/67 ,  B05B11/10

CPC分类号： B05C11/1039 ,  B05B11/1097 ,  B05C11/08 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715 ,  B05D1/005

摘要： A spin dispenser module and methods for using the same is disclosed. The spin dispenser module includes a cup having a basin with sidewalls and an exhaust, a rotatable platform situated inside the cup adapted for holding and rotating a substrate, a liquid dispenser disposed over the rotatable platform for dispensing a liquid coating material on top of the substrate, one or more ejector inlets disposed over the rotatable platform, the one or more ejectors connected to a negative pressure source, and a motor coupled to the rotatable platform to rate the rotatable platform at different rotational speeds. The one or more ejector inlets may be translatable and/or rotatable with optionally adjustable suction pressure. The ejector inlets operate after a liquid coating material is dispensed to avoid deposition of suspended organic compounds after a coating is formed.

公开(公告)号：US20230350290A1

公开(公告)日：2023-11-02

申请号：US18220825

申请日：2023-07-12

申请人： FUJIFILM Corporation

发明人： Tetsuya KAMIMURA ,  Satomi TAKAHASHI

IPC分类号： G03F7/004 ,  B65D85/00 ,  G03F7/16 ,  G03F7/26 ,  G03F7/20 ,  H01L21/027 ,  G03F7/039 ,  G03F7/00 ,  G03F7/075

CPC分类号： G03F7/0048 ,  B65D85/70 ,  G03F7/161 ,  G03F7/26 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/162 ,  H01L21/027 ,  G03F7/16 ,  G03F7/0392 ,  G03F7/0012 ,  G03F7/0397 ,  G03F7/0758

摘要： A pattern forming method includes a pre-wetting step of coating a substrate with a chemical liquid so as to obtain a pre-wetted substrate, a resist film forming step of forming a resist film on the pre-wetted substrate by using an actinic ray-sensitive or radiation-sensitive resin composition, an exposure step of exposing the resist film, and a development step of developing the exposed resist film by using a developer. The chemical liquid contains a mixture of two or more kinds of organic solvents and an impurity metal containing one kind of element selected from the group consisting of Fe, Cr, Ni, and Pb, in which a vapor pressure of the mixture is 50 to 1,420 Pa at 25° C.

公开(公告)号：US20230341772A1

公开(公告)日：2023-10-26

申请号：US18215863

申请日：2023-06-29

申请人： JSR CORPORATION

发明人： Ken MARUYAMA

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/16 ,  G03F7/40 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  C07C309/24 ,  C07C309/06 ,  C07C381/12 ,  C07C309/12 ,  C07C309/19 ,  C07C303/32 ,  G03F7/30

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/162 ,  G03F7/168 ,  G03F7/40 ,  G03F7/2041 ,  G03F7/38 ,  G03F7/327 ,  G03F7/2006 ,  G03F7/0046 ,  G03F7/0392 ,  C07C309/24 ,  C07C309/06 ,  C07C381/12 ,  C07C309/12 ,  C07C309/19 ,  C07C303/32 ,  G03F7/30

摘要： A radiation-sensitive resin composition includes: a base resin comprising a structure unit having an acid-dissociable group; and a radiation-sensitive acid generator which comprises compounds represented by formula (2) and formula (3), and optionally a compound represented by formula (1). R1-R3 are each independently a group having a cyclic structure. X11-X32 are each independently a hydrogen atom, a fluorine atom, or a fluorinated hydrocarbon group. At least one of X11 or X12, at least one of X21 or X22, and at least one of X31 or X32 are not a hydrogen atom, respectively. A11-A32 are each independently a hydrogen atom, or a hydrocarbon group having a carbon number of 1 to 20. The radiation-sensitive resin composition does not comprise a ketone-based solvent. The the radiation-sensitive resin composition does not comprise a monovalent onium cation other than an onium cation represented by formulas (X-1), (X-3), (X-4), or (X-5).

公开(公告)号：US20230294064A1

公开(公告)日：2023-09-21

申请号：US18106443

申请日：2023-02-06

申请人： VIBRANT HOLDINGS, LLC

发明人： John J. Rajasekaran

IPC分类号： B01J19/00 ,  C12Q1/6837 ,  C40B50/14 ,  G03F7/004 ,  G03F7/20 ,  G03F7/42 ,  C40B50/00 ,  C12Q1/68

CPC分类号： B01J19/0046 ,  C12Q1/6837 ,  C40B50/14 ,  G03F7/0045 ,  G03F7/2004 ,  G03F7/42 ,  C40B50/00 ,  C12Q1/68 ,  B01J2219/00432 ,  B01J2219/00504 ,  B01J2219/00529 ,  B01J2219/00533 ,  B01J2219/00596 ,  B01J2219/00626 ,  B01J2219/00659 ,  B01J2219/00675 ,  B01J2219/00711 ,  B01J2219/00729 ,  G03F7/162

摘要： Disclosed herein are formulations, substrates, and arrays for the synthesis of PNA chains and PNA-DNA chimera on microarrays. In some embodiments, the formulations include a photo-protective compound that shields any PNA monomers, PNA polymers, or PNA-DNA chimera already attached to a microarray from radiation exposure during the synthesis of the PNA or PNA-DNA chains. In some embodiments, substrates and arrays comprise a porous or a planar layer for synthesis and attachment of PNA or DNA monomers, or PNA or PNA-DNA polymers. In some embodiments, disclosed herein are formulations and methods for high efficiency coupling of PNA monomers or PNA polymers to a microarray substrate.